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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSC080N03MSGATMA1 DISTI # V72:2272_06390943 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 779In Stock |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 779In Stock |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 53A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | On Order |
|
| BSC080N03MSGATMA1 DISTI # 31084156 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant | 5000 |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP - Tape and Reel (Alt: BSC080N03MSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC080N03MSGATMA1 DISTI # 60R2503 | Infineon Technologies AG | MOSFET, N CHANNEL, 30V, 53A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0067ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 0 | |
| BSC080N03MSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSC080N03MS G DISTI # 726-BSC080N03MSG | Infineon Technologies AG | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M RoHS: Compliant | 0 |
|
| BSC080N03MSGATMA1 DISTI # 7545288P | Infineon Technologies AG | MOSFET N-CHANNEL 30V 13A OPTIMOS3 TDSON8, RL | 1620 |
|
| BSC080N03MSGATMA1 DISTI # BSC080N03MSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,53A,35W,PG-TDSON-8 | 550 |
|
| BSC080N03MSGATMA1 DISTI # 1775456 | Infineon Technologies AG | MOSFET, N CH, 53A, 30V, PG-TDSON-8 RoHS: Compliant | 0 |
|
| BSC080N03MSGATMA1 DISTI # C1S322000595914 | Infineon Technologies AG | MOSFETs RoHS: Compliant | 5000 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSC080N03LSGATMA1 OMO.#: OMO-BSC080N03LSGATMA1 |
MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC080N03MS G OMO.#: OMO-BSC080N03MS-G |
MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M |
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Mfr.#: BSC080N03MSGATMA1 OMO.#: OMO-BSC080N03MSGATMA1 |
MOSFET LV POWER MOS |
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Mfr.#: BSC080N03LS OMO.#: OMO-BSC080N03LS-1190 |
ブランドニューオリジナル |
|
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Mfr.#: BSC080N03LSG OMO.#: OMO-BSC080N03LSG-1190 |
14 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
|
Mfr.#: BSC080N03LSGATMA1 |
MOSFET N-CH 30V 53A TDSON-8 |
|
|
Mfr.#: BSC080N03MSG OMO.#: OMO-BSC080N03MSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC080N03MSGATMA1 |
MOSFET N-CH 30V 53A TDSON-8 |
|
|
Mfr.#: BSC080N03NMS OMO.#: OMO-BSC080N03NMS-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSC080N03LSGATMA1-CUT TAPE |
ブランドニューオリジナル |
