SPB12N50C3ATMA1

SPB12N50C3ATMA1
Mfr. #:
SPB12N50C3ATMA1
メーカー:
Infineon Technologies
説明:
MOSFET N-CH 560V 11.6A TO-263
ライフサイクル:
メーカー新製品
データシート:
SPB12N50C3ATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
Tags
SPB12N, SPB12, SPB1, SPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET Transistor, N Channel, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V
***ical
Trans MOSFET N-CH 500V 11.6A 3-Pin(2+Tab) D2PAK T/R
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:560V; Current, Id Cont:11.6A; On State Resistance:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***ineon
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
***nell
MOSFET, N, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.6A; Drain Source Voltage Vds: 560V; On Resistance Rds(on): 0.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 11.6A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 560V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V
モデル メーカー 説明 ストック 価格
SPB12N50C3ATMA1
DISTI # SPB12N50C3ATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 560V 11.6A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    SPB12N50C3ATMA1
    DISTI # SPB12N50C3ATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 560V 11.6A TO-263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      SPB12N50C3ATMA1
      DISTI # SPB12N50C3ATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 560V 11.6A TO-263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        SPB12N50C3
        DISTI # SPB12N50C3ATMA1
        Infineon Technologies AGTrans MOSFET N-CH 500V 11.6A 3-Pin TO-263 T/R - Bulk (Alt: SPB12N50C3ATMA1)
        RoHS: Compliant
        Min Qty: 321
        Container: Bulk
        Americas - 0
        • 3210:$0.9909
        • 1605:$1.0089
        • 963:$1.0439
        • 642:$1.0829
        • 321:$1.1229
        SPB12N50C3
        DISTI # 726-SPB12N50C3
        Infineon Technologies AGMOSFET N-Ch 500V 11.6A D2PAK-2 CoolMOS C3
        RoHS: Compliant
        4
        • 1:$2.5600
        • 10:$2.1800
        • 100:$1.7400
        • 500:$1.5300
        • 1000:$1.2700
        SPB12N50C3ATMA1
        DISTI # N/A
        Infineon Technologies AGMOSFET LOW POWER_LEGACY0
          SPB12N50C3ATMA1Infineon Technologies AGPower Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          RoHS: Compliant
          16739
          • 1000:$1.0300
          • 500:$1.0800
          • 100:$1.1300
          • 25:$1.1700
          • 1:$1.2600
          SPB12N50C3ATMA1
          DISTI # 2480729RL
          Infineon Technologies AGMOSFET, N-CH, 560V, 11.6A, TO-263-3
          RoHS: Compliant
          0
          • 1000:$1.9100
          • 500:$2.3100
          • 100:$2.6200
          • 10:$3.2900
          • 1:$3.8600
          SPB12N50C3ATMA1
          DISTI # 2480729
          Infineon Technologies AGMOSFET, N-CH, 560V, 11.6A, TO-263-3
          RoHS: Compliant
          0
          • 1000:$1.9100
          • 500:$2.3100
          • 100:$2.6200
          • 10:$3.2900
          • 1:$3.8600
          SPB12N50C3ATMA1
          DISTI # 2480729
          Infineon Technologies AGMOSFET, N-CH, 560V, 11.6A, TO-263-30
          • 500:£1.1700
          • 250:£1.2500
          • 100:£1.3300
          • 10:£1.6600
          • 1:£2.2100
          画像 モデル 説明
          SPB12N50C3

          Mfr.#: SPB12N50C3

          OMO.#: OMO-SPB12N50C3-1190

          Trans MOSFET N-CH 500V 11.6A 3-Pin TO-263 T/R - Bulk (Alt: SPB12N50C3ATMA1)
          SPB12N50C3ATMA1

          Mfr.#: SPB12N50C3ATMA1

          OMO.#: OMO-SPB12N50C3ATMA1-INFINEON-TECHNOLOGIES

          MOSFET N-CH 560V 11.6A TO-263
          SPB12N50C3_05

          Mfr.#: SPB12N50C3_05

          OMO.#: OMO-SPB12N50C3-05-1190

          ブランドニューオリジナル
          可用性
          ストック:
          Available
          注文中:
          5000
          数量を入力してください:
          SPB12N50C3ATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
          参考価格(USD)
          量
          単価
          小計金額
          1
          $1.54
          $1.54
          10
          $1.47
          $14.68
          100
          $1.39
          $139.05
          500
          $1.31
          $656.65
          1000
          $1.24
          $1 236.00
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