SI7973DP-T1-GE3

SI7973DP-T1-GE3
Mfr. #:
SI7973DP-T1-GE3
メーカー:
Vishay / Siliconix
説明:
RF Bipolar Transistors MOSFET 12V 12.8A 3.5W 15mohm @ 4.5V
ライフサイクル:
メーカー新製品
データシート:
SI7973DP-T1-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
製品属性
属性値
メーカー
Vishay / Siliconix
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
包装
リール
パーツエイリアス
SI7973DP-GE3
単位重量
0.017870 oz
取り付けスタイル
SMD / SMT
パッケージ-ケース
SO-8
テクノロジー
Si
チャネル数
2 Channel
構成
デュアル
トランジスタタイプ
2 P-Channel
Pd-電力損失
1.4 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
Vgs-Gate-Source-Voltage
8 V
Id-連続-ドレイン-電流
8.2 A
Vds-ドレイン-ソース-ブレークダウン-電圧
- 12 V
Rds-On-Drain-Source-Resistance
15 mOhms
トランジスタ-極性
Pチャネル
Tags
SI797, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
モデル メーカー 説明 ストック 価格
SI7973DP-T1-GE3
DISTI # 781-SI7973DP-GE3
Vishay IntertechnologiesMOSFET 12V 12.8A 3.5W 15mohm @ 4.5V
RoHS: Compliant
0
  • 3000:$1.4300
画像 モデル 説明
SI7973DP-T1-GE3

Mfr.#: SI7973DP-T1-GE3

OMO.#: OMO-SI7973DP-T1-GE3

MOSFET 12V 12.8A 3.5W 15mohm @ 4.5V
SI7973DP-T1-E3

Mfr.#: SI7973DP-T1-E3

OMO.#: OMO-SI7973DP-T1-E3

MOSFET 12V 12.8A 1.4W
SI7973DP-T1-E3

Mfr.#: SI7973DP-T1-E3

OMO.#: OMO-SI7973DP-T1-E3-317

RF Bipolar Transistors MOSFET 12V 12.8A 1.4W
SI7973DP-T1-GE3

Mfr.#: SI7973DP-T1-GE3

OMO.#: OMO-SI7973DP-T1-GE3-317

RF Bipolar Transistors MOSFET 12V 12.8A 3.5W 15mohm @ 4.5V
可用性
ストック:
Available
注文中:
1500
数量を入力してください:
SI7973DP-T1-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$2.14
$2.14
10
$2.04
$20.38
100
$1.93
$193.05
500
$1.82
$911.65
1000
$1.72
$1 716.00
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