C2M0160120

Mfr. #:: C2M0160120
メーカー:: CREE
説明:
ライフサイクル:: メーカー新製品
データシート:: C2M0160120 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: クリー

製品カテゴリ: FET-シングル

シリーズ: Z-FET

包装: チューブ

単位重量: 1.340411 oz

取り付けスタイル: スルーホール

パッケージ-ケース: TO-247-3

テクノロジー: SiC

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: スルーホール

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: TO-247-3

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 125W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 1200V (1.2kV)

入力-静電容量-Ciss-Vds: 527pF @ 800V

FET機能: 炭化ケイ素（SiC）

Current-Continuous-Drain-Id-25°C: 17.7A (Tc)

Rds-On-Max-Id-Vgs: 196 mOhm @ 10A, 20V

Vgs-th-Max-Id: 2.5V @ 500μA

ゲートチャージ-Qg-Vgs: 32.6nC @ 20V

Pd-電力損失: 125 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 7 ns

立ち上がり時間: 12 ns

Vgs-Gate-Source-Voltage: - 10 V + 25 V

Id-連続-ドレイン-電流: 17.7 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 1200 V

Vgs-th-Gate-Source-Threshold-Voltage: 2.5 V

Rds-On-Drain-Source-Resistance: 160 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 13 ns

典型的なターンオン遅延時間: 7 ns

Qg-Gate-Charge: 32.6 nC

フォワード-相互コンダクタンス-最小: 4.1 S

チャネルモード: 強化

Tags: C2M0, C2M

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

モデル	メーカー	説明	ストック	価格
C2M0160120D DISTI # V99:2348_06265416	Cree, Inc.	Trans MOSFET N-CH SiC 12V 17.7A 3-Pin(3+Tab) TO-247 RoHS: Compliant	42	1:$9.1443
C2M0160120D DISTI # V36:1790_06265416	Cree, Inc.	Trans MOSFET N-CH SiC 12V 17.7A 3-Pin(3+Tab) TO-247 RoHS: Compliant	0	600000:$6.7040 300000:$6.7080 60000:$7.1990 6000:$8.1630 600:$8.3300
C2M0160120D DISTI # C2M0160120D-ND	Wolfspeed	MOSFET N-CH 1200V 19A TO-247 RoHS: Compliant Min Qty: 1 Container: Tube	4912In Stock	100:$8.3125 1:$8.3300
C2M0160120D DISTI # 31274971	Cree, Inc.	Trans MOSFET N-CH SiC 12V 17.7A 3-Pin(3+Tab) TO-247 RoHS: Compliant	42	1:$9.1443
C2M0160120D DISTI # 08X3830	Wolfspeed	SIC MOSFET, N CHANNEL, 1.2KV, 17.7A, TO-247-3,Transistor Polarity:N Channel,Continuous Drain Current Id:17.7A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.16ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes	600	500:$7.6200 100:$8.0100 1:$8.3300
C2M0160120D DISTI # 941-C2M0160120D	Cree, Inc.	MOSFET SIC MOSFET 1200V RDS ON 160 mOhm RoHS: Compliant	1484	1:$8.3300 100:$8.0100 500:$7.6300
C2M0160120D DISTI # 9047348P	Cree, Inc.	N-CHANNEL SIC MOSFET 1.2KV 19A TO247, TU	753	60:£5.9600 30:£6.0800 10:£6.2000 5:£6.3300
C2M0160120D DISTI # 9047348	Cree, Inc.	N-CHANNEL SIC MOSFET 1.2KV 19A TO247, EA	302	60:£5.9600 30:£6.0800 10:£6.2000 5:£6.3300 1:£6.5300
C2M0160120D DISTI # C2M0160120D	Wolfspeed	Transistor: N-MOSFET,SiC,unipolar,1.2kV,17.7A,125W,TO247-3	31	30:$9.1800 10:$9.9300 3:$11.4000 1:$12.9000
C2M0160120D DISTI # 2630830	Wolfspeed	MOSFET, N-CH, 1.2KV, 19A, TO-247 RoHS: Compliant	455	1:$13.9200
C2M0160120D DISTI # 2630830	Wolfspeed	MOSFET, N-CH, 1.2KV, 19A, TO-247 RoHS: Compliant	555	100:£6.5100 50:£6.5600 10:£6.6200 5:£6.6700 1:£7.2500
C2M0160120D DISTI # C2M0160120D	Wolfspeed	SILICON CARBIDE MOSFETS RoHS: Compliant	37230	1:$8.1700 11:$7.9300 51:$7.5900

C2M0160120

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes