IXFR64N50P

IXFR64N50P
Mfr. #:
IXFR64N50P
メーカー:
Littelfuse
説明:
MOSFET 500V 64A
ライフサイクル:
メーカー新製品
データシート:
IXFR64N50P データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFR64N50P DatasheetIXFR64N50P Datasheet (P4)
ECAD Model:
詳しくは:
IXFR64N50P 詳しくは
製品属性
属性値
メーカー:
IXYS
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
スルーホール
パッケージ/ケース:
TO-247-3
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
500 V
Id-連続ドレイン電流:
35 A
Rds On-ドレイン-ソース抵抗:
95 mOhms
Vgs-ゲート-ソース間電圧:
30 V
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
300 W
構成:
独身
チャネルモード:
強化
商標名:
HiPerFET
包装:
チューブ
高さ:
21.34 mm
長さ:
16.13 mm
シリーズ:
IXFR64N50
トランジスタタイプ:
1 N-Channel
幅:
5.21 mm
ブランド:
IXYS
フォワード相互コンダクタンス-最小:
50 S
立ち下がり時間:
22 ns
製品タイプ:
MOSFET
立ち上がり時間:
25 ns
ファクトリーパックの数量:
30
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
85 ns
典型的なターンオン遅延時間:
30 ns
単位重量:
0.186952 oz
Tags
IXFR64, IXFR6, IXFR, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
Trans MOSFET N-CH 500V 35A 3-Pin(3+Tab) ISOPLUS 247
***ment14 APAC
MOSFET, N, ISOPLUS247; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:500V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:ISOPLUS-247; No. of Pins:3; Capacitance Ciss Typ:8700pF; Current Id Max:35A; Isolation Voltage:2.5kV; N-channel Gate Charge:150nC; Operating Temperature Range:-55°C to +150°C; Package / Case:ISOPLUS-247; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Reverse Recovery Time trr Max:200ns; Rth:0.42; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
モデル メーカー 説明 ストック 価格
IXFR64N50P
DISTI # 30709938
IXYS CorporationTrans MOSFET N-CH 500V 37A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
60
  • 1000:$8.6304
  • 500:$9.4560
  • 250:$10.4160
  • 100:$11.3664
  • 50:$11.6448
  • 25:$12.6624
  • 10:$13.6896
  • 2:$15.0624
IXFR64N50P
DISTI # IXFR64N50P-ND
IXYS CorporationMOSFET N-CH 500V 35A ISOPLUS247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$12.6170
IXFR64N50P
DISTI # C1S331700021753
IXYS CorporationTrans MOSFET N-CH 500V 37A 3-Pin(3+Tab) ISOPLUS 247
RoHS: Compliant
60
  • 50:$13.1000
  • 25:$14.1000
  • 10:$15.4000
  • 5:$15.7000
  • 1:$21.0000
画像 モデル 説明
IXFR64N60P

Mfr.#: IXFR64N60P

OMO.#: OMO-IXFR64N60P

MOSFET DIODE Id36 BVdass600
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 600V/42A
IXFR64N50P

Mfr.#: IXFR64N50P

OMO.#: OMO-IXFR64N50P

MOSFET 500V 64A
IXFR64N50Q3

Mfr.#: IXFR64N50Q3

OMO.#: OMO-IXFR64N50Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
IXFR64N60Q3

Mfr.#: IXFR64N60Q3

OMO.#: OMO-IXFR64N60Q3-IXYS-CORPORATION

MOSFET N-CH 600V 42A ISOPLUS247
IXFR66N50Q2

Mfr.#: IXFR66N50Q2

OMO.#: OMO-IXFR66N50Q2-IXYS-CORPORATION

MOSFET N-CH 500V 50A ISOPLUS247
IXFR64N60P

Mfr.#: IXFR64N60P

OMO.#: OMO-IXFR64N60P-IXYS-CORPORATION

Darlington Transistors MOSFET DIODE Id36 BVdass600
IXFR64N50Q3

Mfr.#: IXFR64N50Q3

OMO.#: OMO-IXFR64N50Q3-IXYS-CORPORATION

IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 500V/45A
IXFR64N50P

Mfr.#: IXFR64N50P

OMO.#: OMO-IXFR64N50P-IXYS-CORPORATION

MOSFET 500V 64A
可用性
ストック:
60
注文中:
2043
数量を入力してください:
IXFR64N50Pの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$15.69
$15.69
10
$14.26
$142.60
25
$13.19
$329.75
50
$12.13
$606.50
100
$11.84
$1 184.00
250
$10.85
$2 712.50
500
$9.85
$4 925.00
1000
$8.99
$8 990.00
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