SI4511DY-T1-GE3

Mfr. #:: SI4511DY-T1-GE3
メーカー:: Vishay / Siliconix
説明:: MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
ライフサイクル:: メーカー新製品
データシート:: SI4511DY-T1-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー：: ビシェイ

製品カテゴリ：: MOSFET

JBoss：: E

テクノロジー：: Si

取り付けスタイル：: SMD / SMT

パッケージ/ケース：: SO-8

商標名：: TrenchFET

包装：: リール

高さ：: 1.75 mm

長さ：: 4.9 mm

シリーズ：: SI4

幅：: 3.9 mm

ブランド：: Vishay / Siliconix

製品タイプ：: MOSFET

ファクトリーパックの数量：: 2500

サブカテゴリ：: MOSFET

パーツ番号エイリアス：: SI4511DY-GE3

単位重量：: 0.006596 oz

Tags: SI4511DY-T, SI451, SI45, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4511DY-T1-GE3 説明

***ied Electronics & Automation: SI4511DY-T1-GE3 Dual N/P-channel MOSFETTransistor; 3.7 A; 7.2 A; 20V; 8-Pin SOIC

***ical: Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin SOIC N T/R

***ark: Transistor; Transistor Polarity:Dual N & P Channel; Drain Source Voltage, Vds:20V; Power Dissipation, Pd:1.1W; Operating Temperature Range:-55°C to +150°C; Package/Case:8-SOIC; Termination Type:SMD; Transistor Type:MOSFET ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, NP-CH, 20V, SO8; Transistor Polarity:N and P Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):11.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.6A; Power Dissipation Pd:2W; Voltage Vgs Max:16V

Market price

モデル	メーカー	説明	ストック	価格
SI4511DY-T1-GE3 DISTI # SI4511DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 7.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI4511DY-T1-GE3 DISTI # SI4511DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 7.2A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI4511DY-T1-GE3 DISTI # 70616177	Vishay Siliconix	SI4511DY-T1-GE3 Dual N/P-channel MOSFETTransistor,3.7 A,7.2 A,20V,8-Pin SOIC RoHS: Compliant	0	100:$1.0000 500:$0.9200 1500:$0.8500 2500:$0.7800
SI4511DY-T1-GE3 DISTI # 781-SI4511DY-GE3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3 RoHS: Compliant	0
SI4511DY-T1-GE3	Vishay Siliconix		2019
SI4511DY-T1-GE3 DISTI # 1779267RL	Vishay Intertechnologies	MOSFET, NP-CH, 20V, SO8 RoHS: Compliant	0	1000:$1.0500 500:$1.0800 250:$1.1700 100:$1.3500 25:$1.5600 10:$1.9600 1:$2.4300
SI4511DY-T1-GE3 DISTI # 1779267	Vishay Intertechnologies	MOSFET, NP-CH, 20V, SO8 RoHS: Compliant	0	1000:$1.0500 500:$1.0800 250:$1.1700 100:$1.3500 25:$1.5600 10:$1.9600 1:$2.4300

画像	モデル	説明
	Mfr.#: SI4511DY-T1-E3 OMO.#: OMO-SI4511DY-T1-E3	MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
	Mfr.#: SI4511DY-T1-GE3 OMO.#: OMO-SI4511DY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI4532CDY-GE3
	Mfr.#: SI4511DY-T1-E3 OMO.#: OMO-SI4511DY-T1-E3-VISHAY	IGBT Transistors MOSFET +20/-20V +9.6/-6.2A
	Mfr.#: SI4511DY OMO.#: OMO-SI4511DY-1190	ブランドニューオリジナル
	Mfr.#: SI4511DY-T1 OMO.#: OMO-SI4511DY-T1-1190	MOSFET, NP-CH, 20V, SO8
	Mfr.#: SI4511DY-T1-GE3 OMO.#: OMO-SI4511DY-T1-GE3-VISHAY	MOSFET N/P-CH 20V 7.2A 8-SOIC

SI4511DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes