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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| FCB11N60TM DISTI # FCB11N60TMCT-ND | ON Semiconductor | MOSFET N-CH 600V 11A D2PAK Min Qty: 1 Container: Cut Tape (CT) | 790In Stock |
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| FCB11N60TM DISTI # FCB11N60TMDKR-ND | ON Semiconductor | MOSFET N-CH 600V 11A D2PAK Min Qty: 1 Container: Digi-Reel® | 790In Stock |
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| FCB11N60TM DISTI # FCB11N60TMTR-ND | ON Semiconductor | MOSFET N-CH 600V 11A D2PAK Min Qty: 800 Container: Tape & Reel (TR) | Temporarily Out of Stock |
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| FCB11N60TM DISTI # FCB11N60TM | ON Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB11N60TM) RoHS: Compliant Min Qty: 800 Container: Tape and Reel | Europe - 0 |
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| FCB11N60TM DISTI # FCB11N60TM | ON Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FCB11N60TM) Min Qty: 278 Container: Bulk | Americas - 0 |
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| FCB11N60TM DISTI # FCB11N60TM | ON Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB11N60TM) RoHS: Compliant Min Qty: 800 Container: Tape and Reel | Asia - 0 |
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| FCB11N60TM DISTI # FCB11N60TM | ON Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FCB11N60TM) RoHS: Compliant Min Qty: 800 Container: Reel | Americas - 0 |
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| FCB11N60TM DISTI # 31K6744 | ON Semiconductor | N CHANNEL MOSFET, 600V, 11A, D2-PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes RoHS: Not Compliant | 0 |
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| FCB11N60TM DISTI # 512-FCB11N60TM | ON Semiconductor | MOSFET HIGH POWER RoHS: Compliant | 1600 |
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| FCB11N60TM | ON Semiconductor | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 RoHS: Compliant | 7 |
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| FCB11N60TM DISTI # 6710337 | ON Semiconductor | FCB11N60TM N-Channel MOSFET, 11 A, 600 V SuperFET, 3-Pin D2PAK ON Semiconductor, EA | 2233 |
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| FCB11N60TM DISTI # 8644923 | ON Semiconductor | FCB11N60TM N-Channel MOSFET, 11 A, 600 V SuperFET, 3-Pin D2PAK ON Semiconductor, RL | 0 |
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| FCB11N60TM | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 RoHS: Compliant | Europe - 800 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: FCB11N60TM OMO.#: OMO-FCB11N60TM |
MOSFET HIGH POWER |
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Mfr.#: FCB11N60 OMO.#: OMO-FCB11N60-1190 |
MOSFET, N, D2-PAK, Transistor Polarity:N Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.32ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage V |
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Mfr.#: FCB11N60 11N60C3 600V |
ブランドニューオリジナル |
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Mfr.#: FCB11N60F OMO.#: OMO-FCB11N60F-1190 |
ブランドニューオリジナル |
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Mfr.#: FCB11N60FTM |
MOSFET N-CH 600V 11A D2PAK |
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Mfr.#: FCB11N60TM |
MOSFET N-CH 600V 11A D2PAK |
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Mfr.#: FCB11N60TM-NL OMO.#: OMO-FCB11N60TM-NL-1190 |
ブランドニューオリジナル |