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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSC100N03LSGATMA1 DISTI # BSC100N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSC100N03LSGATMA1 DISTI # BSC100N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSC100N03LSGATMA1 DISTI # BSC100N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 44A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSC100N03LSGATMA1 DISTI # SP000275117 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP (Alt: SP000275117) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| BSC100N03LS G DISTI # 60R2508 | Infineon Technologies AG | MOSFET, N CH, 30V, 44A, PG-TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:44A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0083ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V,Product Range:-RoHS Compliant: Yes | 0 | |
| BSC100N03LS G DISTI # 726-BSC100N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 13A TDSON-8 RoHS: Compliant | 0 | |
| BSC100N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5458 |
|
| BSC100N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 5000 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSC100N06LS3 G OMO.#: OMO-BSC100N06LS3-G |
MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 |
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Mfr.#: BSC100N03MS G OMO.#: OMO-BSC100N03MS-G |
MOSFET N-Ch 30V 44A TDSON-8 OptiMOS 3M |
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Mfr.#: BSC100N03LS OMO.#: OMO-BSC100N03LS-1190 |
ブランドニューオリジナル |
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Mfr.#: BSC100N03LSG OMO.#: OMO-BSC100N03LSG-1190 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSC100N03LSG , TDZ TR 6. |
ブランドニューオリジナル |
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Mfr.#: BSC100N03MS G OMO.#: OMO-BSC100N03MS-G-1190 |
Trans MOSFET N-CH 30V 12A 8-Pin TDSON EP |
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Mfr.#: BSC100N06LS3 G OMO.#: OMO-BSC100N06LS3-G-1190 |
Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R |
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Mfr.#: BSC100N06LS3G OMO.#: OMO-BSC100N06LS3G-1190 |
60V,50A,N Channel Power MOSFET |
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Mfr.#: BSC100N06LS3GXT OMO.#: OMO-BSC100N06LS3GXT-1190 |
ブランドニューオリジナル |
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Mfr.#: BSC100N10NSFGATMA1 |
MOSFET N-CH 100V 90A TDSON-8 |
