SIHG70N60AEF-GE3

SIHG70N60AEF-GE3
Mfr. #:
SIHG70N60AEF-GE3
メーカー:
Vishay
説明:
MOSFET N-CH 600V 60A TO247AC
ライフサイクル:
メーカー新製品
データシート:
SIHG70N60AEF-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
SIHG70N60AEF-GE3 詳しくは
製品属性
属性値
Tags
SIHG70, SIHG7, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
EF Series Power MOSFET N-Channel with Fast Body Diode 600V VDS ±20V VGS 60A ID 3-Pin TO-247AC
***i-Key
MOSFET N-CH 600V 60A TO247AC
***ark
Mosfet, N-Ch, 600V, 60A, To-247Ac; Transistor Polarity:n Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.0355Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 60A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0355ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:417W; Transistor Case Style:TO-247AC; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:EF Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (07-Jul-2017)
***nell
MOSFET, CA-N, 600V, 60A, TO-247AC; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.0355ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:417W; Modello Case Transistor:TO-247AC; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:EF Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (07-Jul-2017)
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
モデル メーカー 説明 ストック 価格
SIHG70N60AEF-GE3
DISTI # SIHG70N60AEF-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 60A TO247AC
RoHS: Compliant
Min Qty: 1
Container: Tube
500In Stock
  • 500:$7.6962
  • 100:$8.6516
  • 25:$9.8192
  • 10:$10.2440
  • 1:$11.1500
SIHG70N60AEF-GE3
DISTI # SIHG70N60AEF-GE3
Vishay IntertechnologiesEF Series Power MOSFET N-Channel with Fast Body Diode 600V VDS ±20V VGS 60A ID 3-Pin TO-247AC - Tape and Reel (Alt: SIHG70N60AEF-GE3)
RoHS: Compliant
Min Qty: 500
Container: Reel
Americas - 0
  • 5000:$6.3900
  • 3000:$6.5900
  • 2000:$6.7900
  • 1000:$7.0900
  • 500:$7.2900
SIHG70N60AEF-GE3
DISTI # 43AC0286
Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, TO-247AC,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.0355ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes1000
  • 500:$7.4000
  • 250:$7.9200
  • 100:$8.6900
  • 50:$8.9400
  • 25:$9.4500
  • 10:$10.2100
  • 1:$11.2400
SIHG70N60AEF-GE3
DISTI # 78-SIHG70N60AEF-GE3
Vishay IntertechnologiesMOSFET 600V Vds 20V Vgs TO-247AC
RoHS: Compliant
451
  • 1:$11.1300
  • 10:$10.1100
  • 25:$9.3600
  • 50:$8.8500
  • 100:$8.6000
  • 250:$7.8400
  • 500:$7.3300
  • 1000:$6.7300
SIHG70N60AEF-GE3
DISTI # 2802793
Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, TO-247AC
RoHS: Compliant
992
  • 250:$11.7200
  • 100:$12.4000
  • 50:$13.1500
  • 10:$14.3200
  • 5:$16.5200
  • 1:$18.9500
SIHG70N60AEF-GE3
DISTI # 2802793
Vishay IntertechnologiesMOSFET, N-CH, 600V, 60A, TO-247AC992
  • 100:£6.2300
  • 50:£6.4100
  • 10:£6.7800
  • 5:£7.4300
  • 1:£8.0700
画像 モデル 説明
SIHG70N60AEF-GE3

Mfr.#: SIHG70N60AEF-GE3

OMO.#: OMO-SIHG70N60AEF-GE3

MOSFET 600V Vds 20V Vgs TO-247AC
SIHG70N60EF-GE3

Mfr.#: SIHG70N60EF-GE3

OMO.#: OMO-SIHG70N60EF-GE3

MOSFET RECOMMENDED ALT 78-SIHW70N60EF-GE3
SIHG70N60EF

Mfr.#: SIHG70N60EF

OMO.#: OMO-SIHG70N60EF-1190

ブランドニューオリジナル
SIHG70N60EF-GE3

Mfr.#: SIHG70N60EF-GE3

OMO.#: OMO-SIHG70N60EF-GE3-VISHAY

MOSFET N-CH 600V 70A TO-247AC
SIHG70N60EFEF-GE3

Mfr.#: SIHG70N60EFEF-GE3

OMO.#: OMO-SIHG70N60EFEF-GE3-1190

ブランドニューオリジナル
SIHG70N60AEF-GE3

Mfr.#: SIHG70N60AEF-GE3

OMO.#: OMO-SIHG70N60AEF-GE3-VISHAY

MOSFET N-CH 600V 60A TO247AC
可用性
ストック:
Available
注文中:
5500
数量を入力してください:
SIHG70N60AEF-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$9.58
$9.58
10
$9.11
$91.06
100
$8.63
$862.65
500
$8.15
$4 073.65
1000
$7.67
$7 668.00
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