OMO ElectronicOMO Electronic
Expand menu
0 ショッピングカート

STW62NM60N

STW62NM60N
Mfr. #:
STW62NM60N
メーカー:
STMicroelectronics
説明:
MOSFET N-CH 600V 65A TO-247
ライフサイクル:
メーカー新製品
データシート:
STW62NM60N データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
STW62NM60N 詳しくは STW62NM60N Product Details
製品属性
属性値
Tags
STW6, STW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 600 V, 0.04 Ohm typ., 65 A MDmesh(TM) II Power MOSFET in a TO-247 package
***et
Trans MOSFET N-CH 600V 55A 3-Pin(3+Tab) TO-247 Tube
***(Formerly Allied Electronics)
MOSFET N-Channel 600V 65A TO247
***el Electronic
MOSFET N-Ch 600V 0.049 Ohm 55A MDmesh II FET
***r Electronics
Power Field-Effect Transistor, 55A I(D), 600V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***S
French Electronic Distributor since 1988
***ark
Mosfet Transistor, N Channel, 51 A, 600 V, 0.047 Ohm, 10 V, 4 V Rohs Compliant: Yes
***icroelectronics
N-channel 600 V, 0.047 Ohm, 51 A TO-247 FDmesh(TM) II Power MOSFET (with fast diode)
***ure Electronics
N-Channel 600 V 60 mOhm Flange Mount FDmesh II Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 600V 51A Automotive 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Power Field-Effect Transistor, 51A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N CH, 600V, 51A, TO 247; Transistor Polarity: N Channel; Continuous Drain Current Id: 51A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.047ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
***icroelectronics
N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in TO-247 package
***ure Electronics
STW70N60 Series 600 V 0.040 Ohm Flange Mount N-Channel Power Mosfet - TO-247
***ark
MOSFET, N-CH, 600V, 68A, 150DEG C, 450W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:68A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 68A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***icroelectronics
N-channel 500 V, 0.035 Ohm typ., 68 A, MDmesh(TM) II Power MOSFET in TO-247 package
***r Electronics
Power Field-Effect Transistor, 68A I(D), 500V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ark
MOSFET, N-CH, 500V, 68A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:68A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600V, 76A, 36mΩ, TO-247
***ure Electronics
Single N-Channel 600 V 36 mOhm 285 nC 543 W Silicon Flange Mount Mosfet TO-247-3
***r Electronics
Power Field-Effect Transistor, 76A I(D), 600V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET,N CH,600V,76A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.028ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:543W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ure Electronics
IPW60R041P6 Series 600 V 77.5 A CoolMOS™ P6 Power Transistor - TO-247-3
***ark
MOSFET, N-CH, 600V, 77.5A, 150DEG C/481W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:77.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***ineon SCT
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in, PG-TO247-3, RoHS
***nell
MOSFET, N-CH, 600V, 77.5A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 77.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.037ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 481W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P6 Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ineon
Infineons CoolMOS P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. | Summary of Features: Reduced gate charge (Q g); Higher V th; Good body diode ruggedness; Optimized integrated R g; Improved dv/dt from 50V/ns; CoolMOS quality with over 12 years manufacturing experience in superjunction technology | Benefits: Improved effciency especially in light load condition; Better efficiency in soft switching applications due to earlier turn-off; Suitable for hard- & soft-switching topologies; Optimized balance of efficiency and ease of use and good controllability of switching behavior; High robustness and better efficiency; Outstanding quality & reliability | Target Applications: PFC stages for server, telecom rectifier, PC silverbox, gaming consoles; PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles
***emi
N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 47 A, 62 mΩ, TO-247
***ure Electronics
FCH47N60N Series 600 V 47 A 62 mOhm N-Channel SuperMos Mosfet - TO-247-3
***r Electronics
Power Field-Effect Transistor, 47A I(D), 600V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***nell
MOSFET,N CH,600V,47A,TO247; Transistor Polarity:N Channel; Continuous Drain Current Id:47A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.0515ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:368W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011)
***rchild Semiconductor
The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
モデル メーカー 説明 ストック 価格
STW62NM60N
DISTI # 497-13288-5-ND		STMicroelectronicsMOSFET N-CH 600V 65A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		45In Stock
  • 30:$12.1717
  • 10:$13.0540
  • 1:$15.6100
STW62NM60N
DISTI # STW62NM60N		STMicroelectronicsTrans MOSFET N-CH 600V 55A 3-Pin(3+Tab) TO-247 Tube (Alt: STW62NM60N)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 570
  • 1000:€5.1900
  • 500:€5.2900
  • 100:€5.3900
  • 50:€5.4900
  • 25:€5.5900
  • 10:€5.7900
  • 1:€5.9900
STW62NM60N
DISTI # 48W6991		STMicroelectronicsPTD HIGH VOLTAGE0
  • 500:$10.9200
  • 250:$11.2600
  • 100:$12.8600
  • 50:$13.6100
  • 25:$15.1200
  • 10:$15.5400
  • 1:$16.6400
STW62NM60N
DISTI # 511-STW62NM60N		STMicroelectronicsMOSFET N-Ch 600V 0.049 Ohm 55A MDmesh II FET
RoHS: Compliant		0
    画像 モデル 説明
    STW62N65M5

    Mfr.#: STW62N65M5

    OMO.#: OMO-STW62N65M5

    		 MOSFET N-Ch 650V 46A Auto 0.041 Ohm MDMesh M5
    STW62N65M5

    Mfr.#: STW62N65M5

    OMO.#: OMO-STW62N65M5-STMICROELECTRONICS

    		 MOSFET N-CH 650V TO-247
    STW62NM60N

    Mfr.#: STW62NM60N

    OMO.#: OMO-STW62NM60N-STMICROELECTRONICS

    		 MOSFET N-CH 600V 65A TO-247
    可用性
    ストック:
    Available
    注文中:
    5500
    数量を入力してください:
    STW62NM60Nの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $0.00
    $0.00
    10
    $0.00
    $0.00
    100
    $0.00
    $0.00
    500
    $0.00
    $0.00
    1000
    $0.00
    $0.00
    皮切りに
    最新の製品
    • PWD13F60 High-Density Power Driver
      PWD13F60 High-Density Power Driver
      STMicroelectronics' PWD13F60 integrated power MOSFET full bridge with embedded gate drivers in a 13 mm x 10 mm outline.
    • STSPIN32F0 Motor-Control System
      STSPIN32F0 Motor-Control System
      STMicroelectronics' STSPIN32F0 motor-control system-in-package combines the power and flexibility of a microcontroller-based drive with ease of use and space efficiency.
    • STripFET VI DeepGATE Series Power MOSFETs
      STripFET VI DeepGATE Series Power MOSFETs
      STMicroelectronics' 80 V MOSFETs with DeepGATE process integration result a more efficient and denser design in applications such as motor control and DC/DC converters.
    • ESDA8P30-1T2 TVS Diode
      ESDA8P30-1T2 TVS Diode
      STMicroelectronics' ESDA8P30-1T2 unidirectional, single-line TVS diode provides USB VBUS, power supply, and battery protection.
    • CLOUD-ST25TA02KB Evaluation Board
      CLOUD-ST25TA02KB Evaluation Board
      STMicroelectronics' CLOUD-ST25TA02KB evaluation board for the ST25TA02KB-P device can be configured for various uses such as indicating field detection.
    More Newest Products
    Top