SI3588DV-T1-E3

Mfr. #:: SI3588DV-T1-E3
メーカー:: Vishay
説明:: IGBT Transistors MOSFET 20V 3.0/2.2A
ライフサイクル:: メーカー新製品
データシート:: SI3588DV-T1-E3 データシート
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HTML Datasheet:: SI3588DV-T1-E3 Datasheet SI3588DV-T1-E3 Datasheet (P4-P6)SI3588DV-T1-E3 Datasheet (P7-P8)
ECAD Model:

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-アレイ

シリーズ: TrenchFETR

包装: Digi-ReelR

パーツエイリアス: SI3588DV-E3

単位重量: 0.000705 oz

取り付けスタイル: SMD / SMT

商標名: TrenchFET

パッケージ-ケース: SOT-23-6 Thin, TSOT-23-6

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 6-TSOP

構成: 1 N-Channel 1 P-Channel

FETタイプ: NおよびPチャネル

パワーマックス: 830mW, 83mW

トランジスタタイプ: 1 N-Channel 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: -

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 2.5A, 570mA

Rds-On-Max-Id-Vgs: 80 mOhm @ 3A, 4.5V

Vgs-th-Max-Id: 450mV @ 250μA (Min)

ゲートチャージ-Qg-Vgs: 7.5nC @ 4.5V

Pd-電力損失: 830 mW

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 30 ns 29 ns

立ち上がり時間: 30 ns 29 ns

Vgs-Gate-Source-Voltage: 8 V

Id-連続-ドレイン-電流: 2.5 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 20 V

Rds-On-Drain-Source-Resistance: 80 mOhms 145 mOhms

トランジスタ-極性: NチャネルPチャネル

典型的なターンオフ遅延時間: 28 ns 24 ns

典型的なターンオン遅延時間: 12 ns 12 ns

チャネルモード: 強化

Tags: SI3588D, SI3588, SI358, SI35, SI3

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3588DV-T1-E3 説明

***ical: Trans MOSFET N/P-CH 20V 2.5A/0.57A 6-Pin TSOP T/R

***i-Key: MOSFET N/P-CH 20V 2.5A 6TSOP

***ser: Dual MOSFETs 20V 3.0/2.2A

***nell: MOSFET, P, TSOP-6; Transistor Type:MOSFET; Transistor Polarity:Dual N / P Channel; Voltage, Vds Typ:20V; Current, Id Cont:3A; On State Resistance:80mohm; Voltage, Vgs Rds on Measurement:4.5V; Case Style:TSOP-6

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):80mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TSOP-6 ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, P, TSOP-6; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:450mV; Power Dissipation Pd:830mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; Continuous Drain Current Id:3A; Current Id Max:3A; Drain Source Voltage Vds:20V; Module Configuration:Dual; On Resistance Rds(on):80mohm; Package / Case:TSOP-6; Power Dissipation Pd:830mW; Voltage Vds Typ:20V; Voltage Vgs Max:450mV; Voltage Vgs Rds on Measurement:4.5V

Market price

モデル	メーカー	説明	ストック	価格
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI3588DV-T1-E3 DISTI # SI3588DV-T1-E3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 2.5A 6TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI3588DV-T1-E3 DISTI # 781-SI3588DV-E3	Vishay Intertechnologies	MOSFET 20V 3.0/2.2A RoHS: Compliant	0
SI3588DV-T1-E3 DISTI # 1612643RL	Vishay Intertechnologies	MOSFET, P, TSOP-6 RoHS: Compliant	0	1:$2.1600 10:$1.7400 100:$1.3900 250:$1.2000 500:$1.0400 1000:$0.9660 3000:$0.9320
SI3588DV-T1-E3 DISTI # 1612643	Vishay Intertechnologies	MOSFET, P, TSOP-6 RoHS: Compliant	0	1:$2.1600 10:$1.7400 100:$1.3900 250:$1.2000 500:$1.0400 1000:$0.9660 3000:$0.9320

画像	モデル	説明
	Mfr.#: SI3588DV-T1-GE3 OMO.#: OMO-SI3588DV-T1-GE3	MOSFET RECOMMENDED ALT 78-SI3585CDV-T1-GE3
	Mfr.#: SI3588DV-T1-E3 OMO.#: OMO-SI3588DV-T1-E3-VISHAY	IGBT Transistors MOSFET 20V 3.0/2.2A
	Mfr.#: SI3588DV-T1-GE3 OMO.#: OMO-SI3588DV-T1-GE3-VISHAY	MOSFET N/P-CH 20V 2.5A 6-TSOP
	Mfr.#: SI3588DV-T1E3 OMO.#: OMO-SI3588DV-T1E3-1190	ブランドニューオリジナル

SI3588DV-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes