HMC717LP3ETR

HMC717LP3ETR
Mfr. #:
HMC717LP3ETR
メーカー:
HITTITE
説明:
GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz
ライフサイクル:
メーカー新製品
データシート:
HMC717LP3ETR データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
ヒッタイト
製品カテゴリ
ICチップ
Tags
HMC717, HMC71, HMC7, HMC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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The HMC717LP3E is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, 16.5 dB gain and +31.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC717LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. Applications Fixed Wireless and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio Access Points
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The HMC618LP3E is a GaAs pHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/4G basestation front-end receivers operating between 1.2 - 2.2 GHz. The amplifier has been optimized to provide 0.75 dB noise figure, 19 dB gain and +36 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC618LP3E shares the same package and pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA. The HMC618LP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. The HMC618LP3E offers improved noise figure versus the previously released HMC375LP3(E) and the HMC382LP3(E). Applications Cellular/3G and LTE/4G BTS & Infrastructure Repeaters and Femtocells Public Safety Radio
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new, original packaged
モデル メーカー 説明 ストック 価格
HMC717LP3ETR
DISTI # VAH:2490_16964656
Analog Devices IncGAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz63
  • 25:$9.8500
  • 1:$11.0700
HMC717LP3ETR
DISTI # 31280879
Analog Devices IncGAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz100
  • 100:$21.0700
HMC717LP3ETR
DISTI # 26077661
Analog Devices IncGAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz63
  • 25:$9.8500
  • 1:$11.0700
画像 モデル 説明
HMC717ALP3ETR

Mfr.#: HMC717ALP3ETR

OMO.#: OMO-HMC717ALP3ETR

RF Amplifier LNA w/ Adj Bias, 4.9 to 6.0GHz
HMC717ALP3E

Mfr.#: HMC717ALP3E

OMO.#: OMO-HMC717ALP3E

RF Amplifier LNA w/ Adj Bias, 4.9 to 6.0GHz
HMC717LP3ETR

Mfr.#: HMC717LP3ETR

OMO.#: OMO-HMC717LP3ETR-1190

GAAS PHEMT MMIC LOW NOISE AMPLIFIER, 4.8 - 6.0 GHz
HMC717

Mfr.#: HMC717

OMO.#: OMO-HMC717-1190

ブランドニューオリジナル
HMC717ALP3E

Mfr.#: HMC717ALP3E

OMO.#: OMO-HMC717ALP3E-ANALOG-DEVICES

IC RF AMP LTE 4.8GHZ-6GHZ 16QFN
HMC717ALP3ETR

Mfr.#: HMC717ALP3ETR

OMO.#: OMO-HMC717ALP3ETR-ANALOG-DEVICES

IC RF AMP LTE 4.8GHZ-6GHZ 16QFN
HMC717LP3E

Mfr.#: HMC717LP3E

OMO.#: OMO-HMC717LP3E-ANALOG-DEVICES

IC RF AMP GP 4.8GHZ-6GHZ 16QFN
可用性
ストック:
Available
注文中:
2000
数量を入力してください:
HMC717LP3ETRの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$2.68
$2.68
10
$2.55
$25.51
100
$2.42
$241.65
500
$2.28
$1 141.15
1000
$2.15
$2 148.00
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