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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1TR-ND | Infineon Technologies AG | MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1CT-ND | Infineon Technologies AG | MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1DKR-ND | Infineon Technologies AG | MOSFET 2N-CH 20V 5.4A 8DSO RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSO330N02K G DISTI # BSO330N02KG | Infineon Technologies AG | Trans MOSFET N-CH 20V 5.4A 8-Pin DSO - Bulk (Alt: BSO330N02KG) RoHS: Not Compliant Min Qty: 1471 Container: Bulk | Americas - 0 |
|
| BSO330N02KGFUMA1 DISTI # BSO330N02KGFUMA1 | Infineon Technologies AG | Trans MOSFET 2N-CH 20V 5.4A 8DSO - Bulk (Alt: BSO330N02KGFUMA1) Min Qty: 1389 Container: Bulk | Americas - 0 |
|
| BSO330N02K G DISTI # 726-BSO330N02KG | Infineon Technologies AG | MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2 RoHS: Compliant | 2299 |
|
| BSO330N02KG | Infineon Technologies AG | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2746 |
|
| BSO330N02KGFUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 12500 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: BSO330N02K(330N2K) OMO.#: OMO-BSO330N02K-330N2K--1190 |
ブランドニューオリジナル |
|
|
Mfr.#: BSO330N02KG OMO.#: OMO-BSO330N02KG-1190 |
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSO330N02KGFUMA1 |
MOSFET 2N-CH 20V 5.4A 8DSO |
|
|
Mfr.#: BSO330N02K G OMO.#: OMO-BSO330N02K-G-126 |
IGBT Transistors MOSFET N-Ch 20V 5.4A DSO-8 OptiMOS 2 |
