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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| IPB260N06N3GATMA1 DISTI # IPB260N06N3GATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 27A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB260N06N3GATMA1 DISTI # IPB260N06N3GATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 27A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB260N06N3GATMA1 DISTI # IPB260N06N3GATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 27A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB260N06N3 G DISTI # 726-IPB260N06N3G | Infineon Technologies AG | MOSFET N-Ch 200V 27A D2PAK-2 RoHS: Compliant | 0 | |
| IPB260N06N3G | Infineon Technologies AG | Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 1940 |
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| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: IPB260N06N3 OMO.#: OMO-IPB260N06N3-1190 |
ブランドニューオリジナル |
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Mfr.#: IPB260N06N3G OMO.#: OMO-IPB260N06N3G-1190 |
Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IPB260N06N3GATMA1 |
MOSFET N-CH 60V 27A TO263-3 |
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Mfr.#: IPB26CN10N OMO.#: OMO-IPB26CN10N-1190 |
- Bulk (Alt: IPB26CN10N) |
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Mfr.#: IPB26CN10N G OMO.#: OMO-IPB26CN10N-G-1190 |
MOSFET N-Ch 100V 35A D2PAK-2 |
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Mfr.#: IPB26CN10NG OMO.#: OMO-IPB26CN10NG-1190 |
ブランドニューオリジナル |
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Mfr.#: IPB26CN10NGATMA1 |
MOSFET N-CH 100V 35A TO263-3 |
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Mfr.#: IPB26CNE8N G |
MOSFET N-CH 85V 35A TO263-3 |
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Mfr.#: IPB26CNE8NG OMO.#: OMO-IPB26CNE8NG-1190 |
ブランドニューオリジナル |
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Mfr.#: IPB260N06N3 G OMO.#: OMO-IPB260N06N3-G-126 |
IGBT Transistors MOSFET N-Ch 200V 27A D2PAK-2 |