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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| EMX1DXV6T1G DISTI # V36:1790_07301071 | ON Semiconductor | Trans GP BJT NPN 50V 0.1A Automotive 6-Pin SOT-563 T/R RoHS: Compliant | 0 |
|
| EMX1DXV6T1G DISTI # EMX1DXV6T1GOSCT-ND | ON Semiconductor | TRANS 2NPN 50V 0.1A SOT563 Min Qty: 1 Container: Cut Tape (CT) | 3480In Stock |
|
| EMX1DXV6T1G DISTI # EMX1DXV6T1GOSDKR-ND | ON Semiconductor | TRANS 2NPN 50V 0.1A SOT563 Min Qty: 1 Container: Digi-Reel® | 3480In Stock |
|
| EMX1DXV6T1G DISTI # EMX1DXV6T1GOSTR-ND | ON Semiconductor | TRANS 2NPN 50V 0.1A SOT563 Min Qty: 4000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| NSVEMX1DXV6T1G DISTI # NSVEMX1DXV6T1G-ND | ON Semiconductor | TRANS 2NPN 50V 0.1A SOT563 Min Qty: 4000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| EMX1DXV6T1G DISTI # 26638647 | ON Semiconductor | Trans GP BJT NPN 50V 0.1A Automotive 6-Pin SOT-563 T/R RoHS: Compliant | 288000 |
|
| EMX1DXV6T1G DISTI # EMX1DXV6T1G | ON Semiconductor | Trans GP BJT NPN 50V 0.1A 6-Pin SOT-563 T/R (Alt: EMX1DXV6T1G) RoHS: Compliant Min Qty: 8000 Container: Tape and Reel | Asia - 0 |
|
| EMX1DXV6T1G DISTI # EMX1DXV6T1G | ON Semiconductor | Trans GP BJT NPN 50V 0.1A 6-Pin SOT-563 T/R - Bulk (Alt: EMX1DXV6T1G) RoHS: Compliant Min Qty: 6250 Container: Bulk | Americas - 0 |
|
| NSVEMX1DXV6T1G DISTI # NSVEMX1DXV6T1G | ON Semiconductor | Trans GP BJT NPN 50V 0.1A 6-Pin SOT-563 T/R - Tape and Reel (Alt: NSVEMX1DXV6T1G) RoHS: Compliant Min Qty: 8000 Container: Reel | Americas - 0 |
|
| NSVEMX1DXV6T1G DISTI # NSVEMX1DXV6T1G | ON Semiconductor | Trans GP BJT NPN 50V 0.1A 6-Pin SOT-563 T/R (Alt: NSVEMX1DXV6T1G) Min Qty: 4000 Container: Tape and Reel | Europe - 0 |
|
| EMX1DXV6T1G DISTI # 41K9777 | ON Semiconductor | BIPOLAR TRANSISTOR, NPN, DUAL, 50V, SOT563,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:50V,Power Dissipation Pd:357mW,DC Collector Current:100mA,DC Current Gain hFE:120hFE,No. of Pins:6Pins,MSL:MSL 1 - UnlimitedRoHS Compliant: Yes RoHS: Compliant | 0 |
|
| EMX1DXV6T1G DISTI # 863-EMX1DXV6T1G | ON Semiconductor | Bipolar Transistors - BJT 100mA 60V Dual NPN RoHS: Compliant | 5065 |
|
| NSVEMX1DXV6T1G DISTI # 863-NSVEMX1DXV6T1G | ON Semiconductor | Bipolar Transistors - BJT SS DUAL NPN GEN PURP TSTR RoHS: Compliant | 7998 |
|
| EMX1DXV6T1G | ON Semiconductor | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon RoHS: Compliant | 144000 |
|
| EMX1DXV6T1G | ON Semiconductor | 4000 | ||
| EMX1DXV6T1G | ON Semiconductor | 538 | ||
| EMX1DXV6T1G | ON Semiconductor | Dual NPN General Purpose Amplifier Transistor | 500 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: EMX10110UG OMO.#: OMO-EMX10110UG-1190 |
ブランドニューオリジナル |