SI7942DP-T1-E3

Mfr. #:: SI7942DP-T1-E3
メーカー:: Vishay
説明:: Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R
ライフサイクル:: メーカー新製品
データシート:: SI7942DP-T1-E3 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: SI7942DP-T1-E3 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: ICチップ

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI7942DP-T1

単位重量: 0.017870 oz

取り付けスタイル: SMD / SMT

商標名: TrenchFET / PowerPAK

パッケージ-ケース: PowerPAKR SO-8 Dual

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR SO-8 Dual

構成: デュアル

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 1.4W

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 100V

入力-静電容量-Ciss-Vds: -

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 3.8A

Rds-On-Max-Id-Vgs: 49 mOhm @ 5.9A, 10V

Vgs-th-Max-Id: 4V @ 250μA

ゲートチャージ-Qg-Vgs: 24nC @ 10V

Pd-電力損失: 1.4 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 20 ns

立ち上がり時間: 15 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 3.8 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V

Rds-On-Drain-Source-Resistance: 49 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 35 ns

典型的なターンオン遅延時間: 15 ns

フォワード-相互コンダクタンス-最小: 14 S

チャネルモード: 強化

Tags: SI7942DP-T, SI7942D, SI7942, SI794, SI79, SI7

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7942DP-T1-E3 詳しくは

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

モデル	メーカー	説明	ストック	価格
SI7942DP-T1-E3 DISTI # V72:2272_09216415	Vishay Intertechnologies	Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R RoHS: Compliant	2035	1000:$1.5440 500:$1.5819 250:$1.7000 100:$1.9850 25:$2.3630 10:$2.3910 1:$2.6050
SI7942DP-T1-E3 DISTI # SI7942DP-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 3.8A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$1.2820
SI7942DP-T1-E3 DISTI # SI7942DP-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 100V 3.8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$1.4183 500:$1.7117 100:$2.2008 10:$2.7390 1:$3.0300
SI7942DP-T1-E3 DISTI # SI7942DP-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 100V 3.8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$1.4183 500:$1.7117 100:$2.2008 10:$2.7390 1:$3.0300
SI7942DP-T1-E3 DISTI # 27070794	Vishay Intertechnologies	Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R RoHS: Compliant	3000	3000:$1.4667
SI7942DP-T1-E3 DISTI # 27065661	Vishay Intertechnologies	Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R RoHS: Compliant	2035	1000:$1.5440 500:$1.5819 250:$1.7000 100:$1.9850 25:$2.3630 10:$2.3910 5:$2.6050
SI7942DP-T1-E3 DISTI # SI7942DP-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7942DP-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.3900 6000:$1.2900 12000:$1.2900 18000:$1.1900 30000:$1.1900
SI7942DP-T1-E3 DISTI # 06J8186	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 100V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.9A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.041ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:4V, RoHS Compliant: Yes	0	1:$1.4700 3000:$1.4600 6000:$1.3900 12000:$1.2300
SI7942DP-T1-E3 DISTI # 70AC6515	Vishay Intertechnologies		0	1:$3.1700 25:$2.8600 50:$2.5800 100:$2.3000 250:$2.0400 500:$1.7900 1000:$1.4800
SI7942DP-T1-E3	Vishay Intertechnologies	Dual N-Channel 100 V 0.049 Ohms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant	3000Reel	3000:$1.2200
SI7942DP-T1-E3 DISTI # 781-SI7942DP-E3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	277	1:$3.1700 10:$2.8700 100:$2.3100 250:$1.9300 500:$1.7900 1000:$1.7600 3000:$1.7300
SI7942DP-T1-E3	Vishay Siliconix		1031
SI7942DP-T1-E3 DISTI # C1S803601192868	Vishay Intertechnologies	MOSFETs RoHS: Compliant	2035	250:$1.6970 100:$1.9790 25:$2.3529 10:$2.3810 1:$2.5920
SI7942DP-T1-E3	Vishay Intertechnologies	MOSFET 100V Vds 20V Vgs PowerPAK SO-8	Americas -
SI7942DP-T1-E3 DISTI # 2918684	Vishay Intertechnologies	RoHS: Compliant	0	1:$5.0700 25:$4.4200 50:$3.8300 100:$3.5200 250:$3.3200 500:$3.1400
SI7942DP-T1-E3 DISTI # XSFP00000137415	Vishay Siliconix	RoHS: Compliant	4038	3000:$2.4400 4038:$2.2200
SI7942DP-T1-E3 DISTI # 2918684	Vishay Intertechnologies	MOSFET, DUAL N-CH, 100V, 3.8A, 150DEG C RoHS: Compliant	0	1:£2.7900 25:£2.5100 50:£2.2700 100:£2.0300 250:£1.7900

画像	モデル	説明
	Mfr.#: SI7942DP-T1-E3 OMO.#: OMO-SI7942DP-T1-E3	MOSFET 100V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7942DP-T1-GE3 OMO.#: OMO-SI7942DP-T1-GE3	MOSFET 100V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SI7942DP OMO.#: OMO-SI7942DP-1190	ブランドニューオリジナル
	Mfr.#: SI7942DP-T1 OMO.#: OMO-SI7942DP-T1-1190	MOSFET, DUAL N-CH, 100V, 3.8A, 150DEG C
	Mfr.#: SI7942DP-T1-GE3 OMO.#: OMO-SI7942DP-T1-GE3-VISHAY	MOSFET 2N-CH 100V 3.8A PPAK SO-8
	Mfr.#: SI7942DP-T1-E3 OMO.#: OMO-SI7942DP-T1-E3-VISHAY	Trans MOSFET N-CH 100V 3.8A 8-Pin PowerPAK SO T/R

SI7942DP-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes