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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SIR662DP-T1-GE3 DISTI # V72:2272_07432386 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R RoHS: Compliant | 12570 |
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| SIR662DP-T1-GE3 DISTI # V36:1790_07432386 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R RoHS: Compliant | 0 |
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| SIR662DP-T1-GE3 DISTI # SIR662DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 60V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 200In Stock |
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| SIR662DP-T1-GE3 DISTI # SIR662DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 60V 60A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 200In Stock |
|
| SIR662DP-T1-GE3 DISTI # SIR662DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 60V 60A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | On Order |
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| SIR662DP-T1-GE3 DISTI # 32363427 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R RoHS: Compliant | 12570 |
|
| SIR662DP-T1-GE3 DISTI # 33368983 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R RoHS: Compliant | 3000 |
|
| SIR662DP-T1-GE3 DISTI # SIR662DP-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 60V 35.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR662DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
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| SIR662DP-T1-GE3 DISTI # 83T3534 | Vishay Intertechnologies | MOSFET, N CHANNEL, 60V, 60A, POWERPAKSO-8,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0022ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1V RoHS Compliant: Yes | 2970 |
|
| SIR662DP-T1-GE3 DISTI # 64T4039 | Vishay Intertechnologies | MOSFET Transistor, N Channel, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V RoHS Compliant: Yes | 521 |
|
| SIR662DP-T1-GE3 DISTI # 70459586 | Vishay Siliconix | 60V 2.7mOhm@10V 60A N-Ch MV T-FET RoHS: Compliant | 0 |
|
| SIR662DP-T1-GE3 DISTI # 781-SIR662DP-T1-GE3 | Vishay Intertechnologies | MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET RoHS: Compliant | 17272 |
|
| SIR662DP-T1-GE3 | Vishay Intertechnologies | SiR662DP Series 60 V 60 A 0.0027 Ohm SMT N-Channel MOSFET -PowerPAK-SO-8 RoHS: Compliant Min Qty: 3000 | 3000Reel |
|
| SIR662DP-T1-GE3 DISTI # 2056694 | Vishay Intertechnologies | MOSFET, N CH, DIO, 60V,100A, PPK SO8 | 9136 |
|
| SIR662DP-T1-GE3 | Vishay Intertechnologies | MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET | Americas - 18000 | |
| SIR662DP-T1-GE3 DISTI # 2127797 | Vishay Intertechnologies | MOSFET, N CHANNEL, 60V, 60A, POWERPAKSO- RoHS: Compliant | 2970 |
|
| SIR662DP-T1-GE3 DISTI # 2056694 | Vishay Intertechnologies | MOSFET, N CH, DIO, 60V,100A, PPK SO8 RoHS: Compliant | 8836 |
|
| SIR662DP-T1-GE3 DISTI # XSFP00000115626 | Vishay Siliconix | SiR662DP Series 60 V 60 A 0.0027 Ohm SMT N-Channel MOSFET -PowerPAK-SO-8 RoHS: Compliant | 6000 in Stock0 on Order |
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| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SIR662DP-T1-GE3 OMO.#: OMO-SIR662DP-T1-GE3 |
MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET |
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Mfr.#: SIR662DP-T1-GE3 OMO.#: OMO-SIR662DP-T1-GE3-VISHAY |
IGBT Transistors MOSFET 60V 2.7mOhm@10V 60A N-Ch MV T-FET |
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Mfr.#: SIR662DP OMO.#: OMO-SIR662DP-1190 |
ブランドニューオリジナル |
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Mfr.#: SIR662DP-T1-E3 OMO.#: OMO-SIR662DP-T1-E3-1190 |
ブランドニューオリジナル |
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Mfr.#: SIR662DP-T1-GE OMO.#: OMO-SIR662DP-T1-GE-1190 |
ブランドニューオリジナル |
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Mfr.#: SIR662DP-TI-GE3 OMO.#: OMO-SIR662DP-TI-GE3-1190 |
ブランドニューオリジナル |
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Mfr.#: SIR662DPT1GE3 OMO.#: OMO-SIR662DPT1GE3-1190 |
ブランドニューオリジナル |