SIHF22N65E-GE3

SIHF22N65E-GE3
Mfr. #:
SIHF22N65E-GE3
メーカー:
Vishay
説明:
RF Bipolar Transistors MOSFET 650V 180mOhm@10V 22A N-Ch E-SRS
ライフサイクル:
メーカー新製品
データシート:
SIHF22N65E-GE3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
SIHF22N65E-GE3 詳しくは
製品属性
属性値
メーカー
VISHAY
製品カテゴリ
FET-シングル
シリーズ
E
包装
バルク
単位重量
0.211644 oz
取り付けスタイル
スルーホール
商標名
Eシリーズ
パッケージ-ケース
TO-220-3
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
227 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
38 ns
立ち上がり時間
33 ns
Id-連続-ドレイン-電流
22 A
Vds-ドレイン-ソース-ブレークダウン-電圧
650 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Rds-On-Drain-Source-Resistance
180 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
73 ns
典型的なターンオン遅延時間
22 ns
Qg-Gate-Charge
110 nC
フォワード-相互コンダクタンス-最小
6.7 S
Tags
SIHF22, SIHF2, SIHF, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-220 Full-Pak
***ure Electronics
E Series N Channel 700 V 0.18 O 110 nC Flange Mount Power Mosfet - TO-220FP
*** Europe
N-CH SINGLE 650V TO220FP
***et
N-CHANNEL 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
モデル メーカー 説明 ストック 価格
SIHF22N65E-GE3
DISTI # SIHF22N65E-GE3-ND
Vishay SiliconixMOSFET N-CH 650V 22A TO-220FK
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$2.4640
SIHF22N65E-GE3
DISTI # SIHF22N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 22A 3-Pin TO-220FP T/R - Tape and Reel (Alt: SIHF22N65E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 10000:$2.1900
  • 4000:$2.2900
  • 6000:$2.2900
  • 2000:$2.3900
  • 1000:$2.4900
SIHF22N65E-GE3
DISTI # SIHF22N65E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 650V 22A 3-Pin TO-220FP T/R (Alt: SIHF22N65E-GE3)
Min Qty: 1
Container: Tape and Reel
Europe - 0
    SIHF22N65E-GE3
    DISTI # 78-SIHF22N65E-GE3
    Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant
    0
    • 1:$4.9200
    • 10:$4.0800
    • 100:$3.3600
    • 250:$3.2500
    • 500:$2.9200
    • 1000:$2.4600
    • 2500:$2.3200
    SIHF22N65E-GE3Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs TO-220 FULLPAK
    RoHS: Compliant
    Americas -
      SIHF22N65E-GE3Vishay Intertechnologies 619
        画像 モデル 説明
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        Mfr.#: SIHF22N60

        OMO.#: OMO-SIHF22N60-1190

        ブランドニューオリジナル
        SIHF22N60E

        Mfr.#: SIHF22N60E

        OMO.#: OMO-SIHF22N60E-1190

        Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        SIHF22N65E

        Mfr.#: SIHF22N65E

        OMO.#: OMO-SIHF22N65E-1190

        ブランドニューオリジナル
        可用性
        ストック:
        Available
        注文中:
        2000
        数量を入力してください:
        SIHF22N65E-GE3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格(USD)
        単価
        小計金額
        1
        $3.28
        $3.28
        10
        $3.12
        $31.21
        100
        $2.96
        $295.65
        500
        $2.79
        $1 396.15
        1000
        $2.63
        $2 628.00
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