BSC034N03LS G

Mfr. #:: BSC034N03LS G
メーカー:: Infineon Technologies
説明:: MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
ライフサイクル:: メーカー新製品
データシート:: BSC034N03LS G データシート
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詳しくは:: BSC034N03LS G 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: OptiMOS 3

包装: リール

パーツエイリアス: BSC034N03LSGATMA1 BSC034N03LSGXT SP000475948

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: TDSON-8

テクノロジー: Si

チャネル数: 1 Channel

構成: シングルクワッドドレイントリプルソース

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 2.5 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 4.6 ns

立ち上がり時間: 4.8 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 100 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 3.4 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 28 ns

典型的なターンオン遅延時間: 6.9 ns

チャネルモード: 強化

Tags: BSC034N03, BSC034, BSC03, BSC0, BSC

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSC034N03LS G 詳しくは

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Market price

モデル	メーカー	説明	ストック	価格
BSC034N03LSGATMA1 DISTI # V72:2272_06384624	Infineon Technologies AG	Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant	4240	3000:$0.3389 1000:$0.3424 500:$0.4174 250:$0.4534 100:$0.4689 25:$0.5754 10:$0.5826 1:$0.6596
BSC034N03LSGATMA1 DISTI # BSC034N03LSGATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	5000:$0.3870
BSC034N03LSGATMA1 DISTI # 27607303	Infineon Technologies AG	Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant	4240	3000:$0.3389 1000:$0.3424 500:$0.4174 250:$0.4534 100:$0.4689 25:$0.5754 24:$0.5826
BSC034N03LSGXT DISTI # BSC034N03LSGATMA1	Infineon Technologies AG	Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP - Tape and Reel (Alt: BSC034N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 5000	5000:$0.3439 10000:$0.3439 20000:$0.3429 30000:$0.3419 50000:$0.3409
BSC034N03LSGATMA1 DISTI # 97Y1248	Infineon Technologies AG	MOSFET, N-CH, 30V, 100A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes	3279	1:$0.8700 10:$0.7410 25:$0.6840 50:$0.6260 100:$0.5690 250:$0.5360 500:$0.5030 1000:$0.3970
BSC034N03LSGATMA1. DISTI # 27AC1073	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:57W,No. of Pins:8Pins RoHS Compliant: Yes	0	1:$0.3440 20000:$0.3430 30000:$0.3420 50000:$0.3410
BSC034N03LS G DISTI # 726-BSC034N03LSG	Infineon Technologies AG	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	246	1:$0.8900 10:$0.7600 100:$0.5900 500:$0.5200 1000:$0.4100
BSC034N03LSGATMA1 DISTI # 726-BSC034N03LSGATMA	Infineon Technologies AG	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant	6331	1:$0.8700 10:$0.7410 100:$0.5690 500:$0.5030 1000:$0.3970 5000:$0.3520
BSC034N03LSGATMA1 DISTI # BSC034N03LSGATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,30V,100A,57W,PG-TDSON-8	2534	1:$0.6244 3:$0.5530 10:$0.4649 100:$0.4167 1000:$0.3880
BSC034N03LSGATMA1 DISTI # 2617420	Infineon Technologies AG	MOSFET, N-CH, 30V, 100A, PG-TDSON-8 RoHS: Compliant	3279	1:$1.4900 10:$1.3000 100:$1.0600 250:$0.8940 500:$0.7730 1000:$0.7310
BSC034N03LSGATMA1 DISTI # C1S322000626320	Infineon Technologies AG	MOSFETs RoHS: Compliant	4240	250:$0.4637 100:$0.4689 25:$0.5756 10:$0.5826
BSC034N03LSGATMA1 DISTI # 2617420	Infineon Technologies AG	MOSFET, N-CH, 30V, 100A, PG-TDSON-8 RoHS: Compliant	3282	5:£0.6290 25:£0.5670 100:£0.4310 250:£0.4060 500:£0.3810

画像	モデル	説明
	Mfr.#: BSC034N03LSGATMA1 OMO.#: OMO-BSC034N03LSGATMA1	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC034N03LS G OMO.#: OMO-BSC034N03LS-G	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC034N06NSATMA1 OMO.#: OMO-BSC034N06NSATMA1	MOSFET MV POWER MOS
	Mfr.#: BSC034N06NS OMO.#: OMO-BSC034N06NS	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSC034N03LS G OMO.#: OMO-BSC034N03LS-G-1190	MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
	Mfr.#: BSC034N03LSG OMO.#: OMO-BSC034N03LSG-1190	ブランドニューオリジナル
	Mfr.#: BSC034N03LSGATMA1 OMO.#: OMO-BSC034N03LSGATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 30V 100A TDSON-8
	Mfr.#: BSC034N03LSGATMA1 , TDA7 OMO.#: OMO-BSC034N03LSGATMA1-TDA7-1190	ブランドニューオリジナル
	Mfr.#: BSC034N06NS OMO.#: OMO-BSC034N06NS-1190	MOSFET DIFFERENTIATED MOSFETS
	Mfr.#: BSC034N06NSATMA1 OMO.#: OMO-BSC034N06NSATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 100A 8TDSON

BSC034N03LS G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes