SUP40010EL-GE3

Mfr. #:: SUP40010EL-GE3
メーカー:: Vishay
説明:: MOSFET N-CH 40V 120A TO220AB
ライフサイクル:: メーカー新製品
データシート:: SUP40010EL-GE3 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:
詳しくは:: SUP40010EL-GE3 詳しくは

製品属性
属性値

Tags: SUP40010, SUP4001, SUP400, SUP40, SUP4, SUP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SUP40010EL-GE3 詳しくは

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

モデル	メーカー	説明	ストック	価格
SUP40010EL-GE3 DISTI # V99:2348_17583538	Vishay Intertechnologies	Trans MOSFET N-CH 40V 120A 3-Pin(3+Tab) TO-220AB	116	2500:$1.4440 1000:$1.4980 500:$1.7430 250:$1.9730 100:$2.0330 10:$2.4660 1:$3.2428
SUP40010EL-GE3 DISTI # SUP40010EL-GE3-ND	Vishay Siliconix	MOSFET N-CH 40V 120A TO220AB RoHS: Compliant Min Qty: 1 Container: Tube	450In Stock	5000:$1.4334 2500:$1.4894 500:$1.8589 100:$2.1837 50:$2.5196 10:$2.6650 1:$2.9700
SUP40010EL-GE3 DISTI # 25903433	Vishay Intertechnologies	Trans MOSFET N-CH 40V 120A 3-Pin(3+Tab) TO-220AB	116	5:$3.2428
SUP40010EL-GE3 DISTI # SUP40010EL-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 120A 3-Pin TO-220AB (Alt: SUP40010EL-GE3) RoHS: Compliant Min Qty: 1	Europe - 50	50:€1.3900 100:€1.3900 500:€1.3900 1000:€1.3900 25:€1.5900 10:€1.9900 1:€2.8900
SUP40010EL-GE3 DISTI # SUP40010EL-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 120A 3-Pin TO-220AB - Tape and Reel (Alt: SUP40010EL-GE3) RoHS: Not Compliant Min Qty: 500 Container: Reel	Americas - 0	5000:$1.2900 2000:$1.3900 3000:$1.3900 500:$1.4900 1000:$1.4900
SUP40010EL-GE3 DISTI # SUP40010EL-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 40V 120A 3-Pin TO-220AB (Alt: SUP40010EL-GE3) RoHS: Compliant Min Qty: 500	Asia - 0
SUP40010EL-GE3 DISTI # 78-SUP40010ELGE3	Vishay Intertechnologies	MOSFET 40V Vds 20V Vgs TO-220 RoHS: Compliant	366	1:$2.9900 10:$2.4800 100:$2.0400 250:$1.9800 500:$1.7800 1000:$1.5000 2500:$1.4200 5000:$1.3900
SUP40010ELGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	500

画像	モデル	説明
	Mfr.#: SUP40010EL-GE3 OMO.#: OMO-SUP40010EL-GE3	MOSFET 40V Vds 20V Vgs TO-220
	Mfr.#: SUP40012EL-GE3 OMO.#: OMO-SUP40012EL-GE3	MOSFET 40V Vds +/-20V Vgs TO-220AB
	Mfr.#: SUP40010EL OMO.#: OMO-SUP40010EL-1190	ブランドニューオリジナル
	Mfr.#: SUP40010EL-GE3 OMO.#: OMO-SUP40010EL-GE3-VISHAY	MOSFET N-CH 40V 120A TO220AB
	Mfr.#: SUP40010ELGE3 OMO.#: OMO-SUP40010ELGE3-1190	Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

SUP40010EL-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes