STGB30V60DF

Mfr. #:: STGB30V60DF
メーカー:: STMicroelectronics
説明:: IGBT Transistors IGBT & Power Bipola
ライフサイクル:: メーカー新製品
データシート:: STGB30V60DF データシート
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ECAD Model:
詳しくは:: STGB30V60DF 詳しくは STGB30V60DF Product Details

製品属性
属性値

メーカー: ST

製品カテゴリ: IGBT-シングル

シリーズ: 600-650V IGBTs

包装: Digi-ReelR代替パッケージ

単位重量: 0.079014 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

入力方式: 標準

取付タイプ: 表面実装

サプライヤー-デバイス-パッケージ: D2PAK

構成: 独身

パワーマックス: 258W

Reverse-Recovery-Time-trr: 53ns

Current-Collector-Ic-Max: 60A

電圧-コレクタ-エミッタ-故障-最大: 600V

IGBTタイプ: トレンチフィールドストップ

Current-Collector-Pulsed-Icm: 120A

Vce-on-Max-Vge-Ic: 2.3V @ 15V, 30A

スイッチング-エネルギー: 383μJ (on), 233μJ (off)

ゲートチャージ: 163nC

Td-on-off-25°C: 45ns/189ns

テスト条件: 400V, 30A, 10 Ohm, 15V

Pd-電力損失: 258 W

最高作動温度: + 175 C

最低作動温度: - 55 C

コレクター-エミッター-電圧-VCEO-マックス: 600 V

コレクター-エミッター-飽和-電圧: 1.85 V

連続-コレクター-電流-at-25-C: 60 A

ゲート-エミッタ-リーク-電流: 250 nA

最大ゲート-エミッタ-電圧: 20 V

連続-コレクタ-電流-Ic-Max: 30 A

Tags: STGB30V, STGB30, STGB3, STGB, STG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGB30V60DF 説明

***ical: Trans IGBT Chip N=-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R

***p One Stop Global: Trans IGBT Chip N-CH 600V 60A 3-Pin(2+Tab) D2PAK T/R

***et Europe: Trans IGBT Chip N-CH 600V 60A 3-Pin D2PAK T/R

***i-Key: IGBT 600V 60A 258W D2PAK

***ure Electronics: field-stop, V series 600 V, 30 A very high speed

***ark: Ptd High Voltage

STGB30V60DF 詳しくは

IGBT V Series: STMicroelectronics 600V trench-gate field-stop very high speed IGBT V series feature the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz) and simplified thermal and EMI design.

Market price

モデル	メーカー	説明	ストック	価格
STGB30V60DF DISTI # 497-15120-1-ND	STMicroelectronics	IGBT 600V 60A 258W D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
STGB30V60DF DISTI # 497-15120-6-ND	STMicroelectronics	IGBT 600V 60A 258W D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
STGB30V60DF DISTI # 497-15120-2-ND	STMicroelectronics	IGBT 600V 60A 258W D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	1000:$2.2659
STGB30V60DF DISTI # STGB30V60DF	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin D2PAK T/R - Tape and Reel (Alt: STGB30V60DF) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.9900 2000:$1.8900 4000:$1.7900 6000:$1.6900 10000:$1.6900
STGB30V60DF DISTI # STGB30V60DF	STMicroelectronics	Trans IGBT Chip N-CH 600V 60A 3-Pin D2PAK T/R (Alt: STGB30V60DF) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.6900 2000:€1.3900 4000:€1.2900 6000:€1.1900 10000:€1.0900
STGB30V60DF DISTI # 511-STGB30V60DF	STMicroelectronics	IGBT Transistors Trench gate field-stop IGBT, V series 600 V, 30 A very high speed RoHS: Compliant	0	1000:$1.9200

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