AIGW40N65H5XKSA1

AIGW40N65H5XKSA1
Mfr. #:
AIGW40N65H5XKSA1
メーカー:
Infineon Technologies
説明:
IGBT Transistors DISCRETES
ライフサイクル:
メーカー新製品
データシート:
AIGW40N65H5XKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
AIGW40N65H5XKSA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
IGBTトランジスタ
JBoss:
Y
テクノロジー:
Si
パッケージ/ケース:
PG-TO247-3
取り付けスタイル:
スルーホール
構成:
独身
コレクター-エミッター電圧VCEOMax:
650 V
コレクター-エミッター飽和電圧:
1.66 V
最大ゲートエミッタ電圧:
30 V
25℃での連続コレクタ電流:
74 A
Pd-消費電力:
250 W
最低動作温度:
- 40 C
最高作動温度:
+ 175 C
シリーズ:
TRENCHSTOP 5 H5
包装:
チューブ
ブランド:
インフィニオンテクノロジーズ
ゲートエミッタリーク電流:
100 nS
製品タイプ:
IGBTトランジスタ
ファクトリーパックの数量:
240
サブカテゴリ:
IGBT
商標名:
トレンチストップ
パーツ番号エイリアス:
AIGW40N65H5 SP001346886
Tags
AIGW, AIG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt, Aec-Q101, 650V, 74A, 250W, To-247 Rohs Compliant: Yes |Infineon AIGW40N65H5XKSA1
***nell
IGBT, AEC-Q101, 650V, 74A, 250W, TO-247; DC Collector Current: 74A; Collector Emitter Saturation Voltage Vce(on): 1.66V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No.
***ineon SCT
TRENCHSTOP™ 5 AUTO IGBT technology redefines “best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO247-3, RoHS
***ineon
TRENCHSTOP 5 AUTO IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. | Summary of Features: 650V blocking voltage; Max junction temperature 175C; Very low conduction and switching losses; Very low junction and case temperature; High power density design; Positive temperature coefficient in V CEsat | Benefits: 50V higher blocking voltage; Highest efficiency; High device reliability; Low temperature leads to less cooling efforts; Less system costs | Target Applications: Fast switching automotive applications; On-board charger; PFC; DC-DC converter; DC-AC converter
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs
Infineon TRENCHSTOP™ 5 H5 (High Speed 5) IGBTs are high speed and designed with ultimate efficiency for applications switching faster than 30kHz. The High Speed 5 IGBTs feature TRENCHSTOP™ 5 technology and are co-packed with a RAPID 1 fast and soft antiparallel diode. The H5 IGBTs offer best-in-class efficiency in hard switching and resonant topologies and are a plug-and-play replacement for previous generation IGBTs. Typical applications include UPS, welding converters, solar string inverters, and mid to high range switching frequency converters.
モデル メーカー 説明 ストック 価格
AIGW40N65H5XKSA1
DISTI # AIGW40N65H5XKSA1-ND
Infineon Technologies AGIGBT 650V TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
240In Stock
  • 2640:$3.2081
  • 720:$3.9941
  • 240:$4.6918
  • 25:$5.4136
  • 10:$5.7260
  • 1:$6.3800
AIGW40N65H5XKSA1
DISTI # AIGW40N65H5XKSA1
Infineon Technologies AGInfineon's Discrete IGBT TRENCHSTOP 650V - Rail/Tube (Alt: AIGW40N65H5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 1440:$2.8900
  • 2400:$2.8900
  • 960:$2.9900
  • 480:$3.0900
  • 240:$3.2900
AIGW40N65H5XKSA1
DISTI # SP001346886
Infineon Technologies AGInfineon's Discrete IGBT TRENCHSTOP 650V (Alt: SP001346886)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 500:€2.6900
  • 1000:€2.6900
  • 100:€2.7900
  • 50:€2.8900
  • 25:€2.9900
  • 10:€3.2900
  • 1:€4.0900
AIGW40N65H5XKSA1
DISTI # 93AC6941
Infineon Technologies AGIGBT, AEC-Q101, 650V, 74A, 250W, TO-247 ROHS COMPLIANT: YES240
  • 500:$3.8400
  • 250:$4.2800
  • 100:$4.5000
  • 50:$4.7400
  • 25:$4.9700
  • 10:$5.2000
  • 1:$6.1200
AIGW40N65H5XKSA1
DISTI # 726-AIGW40N65H5XKSA1
Infineon Technologies AGIGBT Transistors DISCRETES
RoHS: Compliant
240
  • 1:$6.0600
  • 10:$5.1500
  • 100:$4.4600
  • 250:$4.2400
  • 500:$3.8000
AIGW40N65H5XKSA1
DISTI # 2986329
Infineon Technologies AGIGBT, AEC-Q101, 650V, 74A, 250W, TO-247
RoHS: Compliant
240
  • 1000:$4.6800
  • 500:$5.0300
  • 250:$5.5500
  • 100:$5.8200
  • 10:$6.6600
  • 1:$8.4900
AIGW40N65H5XKSA1
DISTI # 2986329
Infineon Technologies AGIGBT, AEC-Q101, 650V, 74A, 250W, TO-247240
  • 500:£2.7500
  • 250:£3.0700
  • 100:£3.2300
  • 10:£3.7300
  • 1:£4.8500
画像 モデル 説明
AIGW40N65F5XKSA1

Mfr.#: AIGW40N65F5XKSA1

OMO.#: OMO-AIGW40N65F5XKSA1

IGBT Transistors DISCRETES
AIGW40N65H5XKSA1

Mfr.#: AIGW40N65H5XKSA1

OMO.#: OMO-AIGW40N65H5XKSA1

IGBT Transistors DISCRETES
AIGW40N65F5XKSA1

Mfr.#: AIGW40N65F5XKSA1

OMO.#: OMO-AIGW40N65F5XKSA1-INFINEON-TECHNOLOGIES

IGBT 650V TO247-3
AIGW40N65H5XKSA1

Mfr.#: AIGW40N65H5XKSA1

OMO.#: OMO-AIGW40N65H5XKSA1-INFINEON-TECHNOLOGIES

IGBT 650V TO247-3
可用性
ストック:
240
注文中:
2223
数量を入力してください:
AIGW40N65H5XKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$6.06
$6.06
10
$5.15
$51.50
100
$4.46
$446.00
250
$4.24
$1 060.00
500
$3.80
$1 900.00
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