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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SIR802DP-T1-GE3 DISTI # SIR802DP-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 20V 30A PPAK SO-8 Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SIR802DP-T1-GE3 DISTI # SIR802DP-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 20V 30A PPAK SO-8 Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call |
|
| SIR802DP-T1-GE3 DISTI # SIR802DP-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 20V 30A PPAK SO-8 Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call |
|
| SIR802DP-T1-GE3 DISTI # 64T4040 | Vishay Intertechnologies | MOSFET, N CH, DIO, 20V, 30A, PPK SO8,Transistor Polarity:N Channel,Continuous Drain Current Id:30A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0041ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:27.7W,Operating RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| SIR802DP-T1-GE3 | Vishay Siliconix | 30A, 20V, 0.005OHM, N-CHANNEL, SI, POWER, MOSFET | 100 |
|
| SIR802DP-T1-GE3 DISTI # 2056695 | Vishay Intertechnologies | MOSFET, N CH, DIO, 20V, 30A, PPK SO8 RoHS: Compliant | 70 |
|
| SIR802DP-T1-GE3 DISTI # 2056695 | Vishay Intertechnologies | MOSFET, N CH, DIO, 20V, 30A, PPK SO8 RoHS: Compliant | 70 |
|
| SIR802DPT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 30A I(D), 20V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 3000 | |
| SIR802DP-T1-GE3 DISTI # SIR802DP-GE3 | Vishay Intertechnologies | N-Ch 20V 30A 4,6W 0,005R PowerPakSO8 RoHS: Compliant | 0 |
|
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: SIR802DP-T1-GE3 OMO.#: OMO-SIR802DP-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SIRA14DP-T1-GE3 |
|
Mfr.#: SIR802DP OMO.#: OMO-SIR802DP-1190 |
ブランドニューオリジナル |
|
|
Mfr.#: SIR802DP-T1-E3 OMO.#: OMO-SIR802DP-T1-E3-1190 |
ブランドニューオリジナル |
|
Mfr.#: SIR802DP-T1-GE3 OMO.#: OMO-SIR802DP-T1-GE3-VISHAY |
MOSFET N-CH 20V 30A PPAK SO-8 |