SI2306BDS-T1-E3

Mfr. #:: SI2306BDS-T1-E3
メーカー:: Vishay
説明:: MOSFET N-CH 30V 3.16A SOT23-3
ライフサイクル:: メーカー新製品
データシート:: SI2306BDS-T1-E3 データシート
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詳しくは:: SI2306BDS-T1-E3 詳しくは

製品属性
属性値

メーカー: VISHAY

製品カテゴリ: FET-シングル

包装: リール

パーツエイリアス: SI2306BDS-E3

単位重量: 0.050717 oz

取り付けスタイル: SMD / SMT

商標名: TrenchFET

パッケージ-ケース: SOT-23-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 750 mW

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 12 ns

立ち上がり時間: 12 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 3.16 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Rds-On-Drain-Source-Resistance: 47 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 14 ns

典型的なターンオン遅延時間: 7 ns

チャネルモード: 強化

Tags: SI2306BDS-T1-E, SI2306BDS-T1, SI2306BDS-T, SI2306B, SI2306, SI230, SI23, SI2

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI2306BDS-T1-E3 説明

***ure Electronics: Single N-Channel 30 V 0.047 Ohms Surface Mount Power Mosfet - SOT-23

***ied Electronics & Automation: MOSFET; N-Ch.; 30 V(D-S); 0.047 Ohm @ 10 V(GS); 4 A; TO-236 (SOT-23)

*** electronic: Transistor MOSFET N-Ch. 4A/30V SOT23

***ical: Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:3.16A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

***ark: N Channel Mosfet, 30V, 3.16A To-236, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:3.16A; On Resistance Rds(On):0.038Ohm; Transistor Mounting:surface Mount; No. Of Pins:3Pins Rohs Compliant: No

SI2306BDS-T1-E3 詳しくは

SI2 Series TrenchFET® Power MOSFETs: Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.

Market price

モデル	メーカー	説明	ストック	価格
SI2306BDS-T1-E3 DISTI # V72:2272_07432780	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R RoHS: Compliant	3326	3000:$0.2138 1000:$0.2185 500:$0.2831 250:$0.3412 100:$0.3439 25:$0.4172 10:$0.4636 1:$0.6080
SI2306BDS-T1-E3 DISTI # SI2306BDS-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 30V 3.16A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	11939In Stock	1000:$0.2600 500:$0.3365 100:$0.4589 10:$0.6120 1:$0.7300
SI2306BDS-T1-E3 DISTI # SI2306BDS-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 30V 3.16A SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	11939In Stock	1000:$0.2600 500:$0.3365 100:$0.4589 10:$0.6120 1:$0.7300
SI2306BDS-T1-E3 DISTI # SI2306BDS-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 30V 3.16A SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.2302
SI2306BDS-T1-E3 DISTI # 27544423	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R RoHS: Compliant	3326	3000:$0.2138 1000:$0.2185 500:$0.2831 250:$0.3412 100:$0.3439 59:$0.4172
SI2306BDS-T1-E3 DISTI # SI2306BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2306BDS-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1299 6000:$0.1259 12000:$0.1209 18000:$0.1179 30000:$0.1149
SI2306BDS-T1-E3 DISTI # SI2306BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3429 6000:€0.2339 12000:€0.2009 18000:€0.1859 30000:€0.1729
SI2306BDS-T1-E3 DISTI # SI2306BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R (Alt: SI2306BDS-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI2306BDS-T1-E3 DISTI # 65K1920	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 65K1920) RoHS: Not Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$0.7680 25:$0.5860 50:$0.5100 100:$0.4340 250:$0.3960 500:$0.3580 1000:$0.2760
SI2306BDS-T1-E3 DISTI # 51K6949	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 3.16A TO-236, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:3.16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V , RoHS Compliant: Yes	0	1:$0.2250 3000:$0.2250
SI2306BDS-T1-E3 DISTI # 65K1920	Vishay Intertechnologies	N CHANNEL MOSFET, 30V, 3.16A TO-236,Transistor Polarity:N Channel,Continuous Drain Current Id:3.16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,MSL:- , RoHS Compliant: Yes	7218	1:$0.7680 25:$0.5860 50:$0.5100 100:$0.4340 250:$0.3960 500:$0.3580 1000:$0.2760
SI2306BDS-T1-E3. DISTI # 26AC3315	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.2250 3000:$0.2250
SI2306BDS-T1-E3 DISTI # 70026144	Vishay Siliconix	MOSFET,N-Ch.,30 V(D-S),0.047 Ohm @ 10 V(GS),4 A,TO-236 (SOT-23) RoHS: Compliant	0	3000:$0.1950
SI2306BDS-T1-E3 DISTI # 781-SI2306BDS-E3	Vishay Intertechnologies	MOSFET 30V 4.0A 0.75W RoHS: Compliant	3765	1:$0.6400 10:$0.4880 100:$0.3620 500:$0.2980 1000:$0.2300 3000:$0.2250
SI2306BDS-T1-E3	Vishay Semiconductors	3160 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236	2108	279:$0.1200 34:$0.1800 1:$0.6000
SI2306BDS-T1-E3	Vishay Intertechnologies		2762
SI2306BDS-T1-E3	Vishay Siliconix		2635	12:$0.4500 35:$0.2250 224:$0.1350 1113:$0.0900
SI2306BDST1E3	Vishay Intertechnologies		1063
SI2306BDS-T1-E3 DISTI # C1S806000589044	Vishay Intertechnologies	Trans MOSFET N-CH 30V 3.16A 3-Pin TO-236 T/R RoHS: Compliant	3326	250:$0.3095 100:$0.3439 25:$0.4172 10:$0.4636
SI2306BDS-T1-E3	Vishay Intertechnologies	MOSFET 30V 4.0A 0.75W RoHS: Compliant	Americas - 108000
SI2306BDS-T1-E3 DISTI # 1470157	Vishay Intertechnologies	MOSFET, N, SOT-23 RoHS: Compliant	13119	5:£0.4260 25:£0.3980 100:£0.2790
SI2306BDS-T1-E3 DISTI # XSFP00000114025	Vishay Siliconix	RoHS: Compliant	16152	3000:$0.4200 16152:$0.3818
SI2306BDS-T1-E3 DISTI # 1470157RL	Vishay Intertechnologies	MOSFET, N, SOT-23 RoHS: Compliant	0	20:$0.9440 100:$0.7810 500:$0.6120 1000:$0.5030 2500:$0.4270 5000:$0.4040
SI2306BDS-T1-E3 DISTI # 1470157	Vishay Intertechnologies	MOSFET, N, SOT-23 RoHS: Compliant	13119	20:$0.9440 100:$0.7810 500:$0.6120 1000:$0.5030 2500:$0.4270 5000:$0.4040

画像	モデル	説明
	Mfr.#: SI2306BDS-T1-E3 OMO.#: OMO-SI2306BDS-T1-E3	MOSFET 30V 4.0A 0.75W
	Mfr.#: SI2306BDS-T1-GE3 OMO.#: OMO-SI2306BDS-T1-GE3	MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V
	Mfr.#: SI2306BDS OMO.#: OMO-SI2306BDS-1190	ブランドニューオリジナル
	Mfr.#: SI2306BDS-T-E3 OMO.#: OMO-SI2306BDS-T-E3-1190	ブランドニューオリジナル
	Mfr.#: SI2306BDS-T1 OMO.#: OMO-SI2306BDS-T1-1190	ブランドニューオリジナル
	Mfr.#: SI2306BDS-T1-E3 OMO.#: OMO-SI2306BDS-T1-E3-VISHAY	MOSFET N-CH 30V 3.16A SOT23-3
	Mfr.#: SI2306BDS-T1-E3 L6Y OMO.#: OMO-SI2306BDS-T1-E3-L6Y-1190	ブランドニューオリジナル
	Mfr.#: SI2306BDS-T1-E3 , MA8091 OMO.#: OMO-SI2306BDS-T1-E3-MA8091-1190	ブランドニューオリジナル
	Mfr.#: SI2306BDS-T1-GE3 OMO.#: OMO-SI2306BDS-T1-GE3-VISHAY	MOSFET N-CH 30V 3.16A SOT23-3
	Mfr.#: SI2306BDS-T1-E3-CUT TAPE OMO.#: OMO-SI2306BDS-T1-E3-CUT-TAPE-1190	ブランドニューオリジナル

SI2306BDS-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes