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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SI9410BDY-T1-E3 | Vishay Intertechnologies | MOSFET Transistor, N-Channel, SO | 920 |
|
| SI9410BDY-T1-E3 | Vishay Intertechnologies | 2892 | ||
| SI9410BDY-T1-E3 | Vishay Intertechnologies | 1150 | ||
| SI9410BDY-T1-E3 | Vishay Intertechnologies | 2066 | ||
| SI9410BDY-T1-E3 | Vishay Siliconix | 1728 | ||
| SI9410BDYT1E3 | Vishay Intertechnologies | Small Signal Field-Effect Transistor, 6.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 2025 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SI9410BDY-T1-E3 OMO.#: OMO-SI9410BDY-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3 |
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Mfr.#: SI9410BDY-T1-GE3 OMO.#: OMO-SI9410BDY-T1-GE3 |
MOSFET RECOMMENDED ALT 781-SI4178DY-T1-GE3 |
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Mfr.#: SI9410BDY-T1-GE3 OMO.#: OMO-SI9410BDY-T1-GE3-VISHAY |
IGBT Transistors MOSFET 30V 8.1A 2.5W 24mohm @ 10V |
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Mfr.#: SI9410BDY-T1-E3 OMO.#: OMO-SI9410BDY-T1-E3-VISHAY |
IGBT Transistors MOSFET 30V 8.1A 0.024Ohm |
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Mfr.#: SI9410BDY OMO.#: OMO-SI9410BDY-1190 |
POWER FIELD-EFFECT TRANSISTOR, N-CHANNEL, METAL-OXIDE SEMICONDUCTOR FET |
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Mfr.#: SI9410BDY-T1 OMO.#: OMO-SI9410BDY-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI4800BDY-E3 |
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Mfr.#: SI9410BDY-T1-E3. OMO.#: OMO-SI9410BDY-T1-E3--1190 |
ブランドニューオリジナル |