IPB037N06N3 G

Mfr. #:: IPB037N06N3 G
メーカー:: Infineon Technologies
説明:: Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
ライフサイクル:: メーカー新製品
データシート:: IPB037N06N3 G データシート
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詳しくは:: IPB037N06N3 G 詳しくは

製品属性
属性値

メーカー: インフィニオン

製品カテゴリ: FET-シングル

シリーズ: OptiMOS 3

包装: リール

パーツエイリアス: IPB037N06N3GATMA1 IPB037N06N3GXT SP000397986

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

商標名: OptiMOS

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 188 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 5 ns

立ち上がり時間: 70 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 90 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 60 V

Rds-On-Drain-Source-Resistance: 3.7 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 40 ns

典型的なターンオン遅延時間: 30 ns

チャネルモード: 強化

Tags: IPB037N06N3G, IPB037, IPB03, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB037N06N3 G 詳しくは

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

モデル	メーカー	説明	ストック	価格
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$0.8174
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	500:$1.0162 100:$1.3065 10:$1.6260 1:$1.8000
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 90A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	500:$1.0162 100:$1.3065 10:$1.6260 1:$1.8000
IPB037N06N3G DISTI # IPB037N06N3 G	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: IPB037N06N3 G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0
IPB037N06N3G DISTI # SP000397986	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000397986) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€0.9849 2000:€0.7679 4000:€0.6859 6000:€0.6239 10000:€0.5849
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB037N06N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$0.7279 2000:$0.7269 4000:$0.7249 6000:$0.7229 10000:$0.7209
IPB037N06N3GATMA1 DISTI # 60R2653	Infineon Technologies AG	MOSFET, N CHANNEL, 60V, 90A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:90A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.003ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970
IPB037N06N3 G DISTI # 726-IPB037N06N3G	Infineon Technologies AG	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 RoHS: Compliant	20	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970 1000:$0.7440
IPB037N06N3GATMA1 DISTI # 726-IPB037N06N3GATMA	Infineon Technologies AG	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3 RoHS: Compliant	0	1:$1.5100 10:$1.2900 100:$1.0300 500:$0.8970 1000:$0.7440
IPB037N06N3GATMA1 DISTI # IPB037N06N3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,90A,188W,PG-TO263-3	996	1:$1.2370 3:$1.0655 10:$0.8559 100:$0.7432 1000:$0.6920
IPB037N06N3GATMA1 DISTI # XSFP00000156742	Infineon Technologies AG	RoHS: Compliant	3365	1000:$0.9200 3365:$0.8625
IPB037N06N3GATMA1 DISTI # XSKDRABV0021205	Infineon Technologies AG	RoHS: Compliant	4320	1000:$1.1900 4320:$1.0900
IPB037N06N3GATMA1 DISTI # 1775530	Infineon Technologies AG	MOSFET, N CH, 90A, 30V, PG-TO263-3 RoHS: Compliant	2	1:£1.2900 10:£1.0200 100:£0.7690 250:£0.7190 500:£0.6690
IPB037N06N3GATMA1 DISTI # 1775530	Infineon Technologies AG	MOSFET, N CH, 90A, 30V, PG-TO263-3 RoHS: Compliant	0	1:$2.4000 10:$2.0400 100:$1.6300 500:$1.4200 1000:$1.1800

画像	モデル	説明
	Mfr.#: IPB037N06N3GATMA1 OMO.#: OMO-IPB037N06N3GATMA1	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	Mfr.#: IPB037N06N3 G OMO.#: OMO-IPB037N06N3-G	MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
	Mfr.#: IPB037N06N3GATMA1 OMO.#: OMO-IPB037N06N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 90A TO263-3
	Mfr.#: IPB037N06N3 OMO.#: OMO-IPB037N06N3-1190	ブランドニューオリジナル
	Mfr.#: IPB037N06N3G OMO.#: OMO-IPB037N06N3G-1190	Trans MOSFET N-CH 60V 90A 3-Pin TO-263 T/R (Alt: SP000397986)
	Mfr.#: IPB037N06N3 G OMO.#: OMO-IPB037N06N3-G-124	Darlington Transistors MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3

IPB037N06N3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes