BFR 193 E6327

Mfr. #:: BFR 193 E6327
メーカー:: Infineon Technologies
説明:: RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW
ライフサイクル:: メーカー新製品
データシート:: BFR 193 E6327 データシート
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詳しくは:: BFR 193 E6327 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-バイポーラ（BJT）-RF

シリーズ: BFR193

包装: Digi-ReelR代替パッケージ

パーツエイリアス: BFR193E6327HTSA1 BFR193E6327XT SP000011056

単位重量: 0.007090 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: TO-236-3, SC-59, SOT-23-3

テクノロジー: Si

取付タイプ: 表面実装

サプライヤー-デバイス-パッケージ: PG-SOT23-3

構成: 独身

パワーマックス: 580mW

トランジスタタイプ: NPN

Current-Collector-Ic-Max: 80mA

電圧-コレクタ-エミッタ-故障-最大: 12V

DC-電流-ゲイン-hFE-Min-Ic-Vce: 70 @ 30mA, 8V

周波数遷移: 8GHz

雑音指数-dB-Typ-f: 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz

利得: 10dB ~ 15dB

Pd-電力損失: 580 mW

最高作動温度: + 150 C

最低作動温度: - 65 C

動作周波数: 8000 MHz

コレクター-エミッター-電圧-VCEO-マックス: 12 V

トランジスタ-極性: NPN

エミッタ-ベース-電圧-VEBO: 2 V

最大-DC-コレクター-電流: 0.08 A

連続-コレクタ-電流: 0.08 A

DC-コレクター-ベース-ゲイン-hfe-Min: 70

Tags: BFR193E6, BFR193E, BFR193, BFR19, BFR1, BFR

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BFR 193 E6327 詳しくは

RF Transistors: Infineon RF Transistors include Low Noise Amplifiers and High Linearity Transistors. Devices in the Low Noise category are based on silicon bipolar technology. Moderate transition frequency of fT <20 GHz provides ease of use and stability. Breakdown voltage can safely support supply voltage of 5V. These transistors are suitable for use with AM over VHF/UHF up to 14 GHz. High Linearity Transistors provide OIP3 (Output 3rd Order Intercept Point) above 29 dBm. They are based on Infineon's high volume silicon bipolar and SiGe:C technologies for best in class noise figures. These devices are ideal for drivers, pre-amplifiers, and buffer amplifiers.

RF Solutions: Infineon RF Solutions provide RF products for numerous applications with high-performance, cost-effective devices. RF solutions include transistors, low-noise amplifiers, GPS/GLONASS/COMPASS LNA, switches, modules and tuners.

Market price

モデル	メーカー	説明	ストック	価格
BFR193E6327HTSA1 DISTI # BFR193E6327HTSA1CT-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	30893In Stock	1000:$0.0990 500:$0.1262 100:$0.1804 10:$0.2850 1:$0.3800
BFR193E6327HTSA1 DISTI # BFR193E6327HTSA1DKR-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	30893In Stock	1000:$0.0990 500:$0.1262 100:$0.1804 10:$0.2850 1:$0.3800
BFR193E6327HTSA1 DISTI # BFR193E6327HTSA1TR-ND	Infineon Technologies AG	RF TRANS NPN 12V 8GHZ SOT23-3 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	27000In Stock	150000:$0.0645 75000:$0.0667 30000:$0.0742 15000:$0.0786 6000:$0.0874 3000:$0.0961
BFR 193 E6327 DISTI # BFR 193 E6327	Infineon Technologies AG	Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 T/R (Alt: BFR 193 E6327) RoHS: Compliant Min Qty: 15000 Container: Tape and Reel	Asia - 48000	15000:$0.0850 30000:$0.0827 45000:$0.0804 75000:$0.0783 150000:$0.0773 375000:$0.0763 750000:$0.0754
BFR 193 E6327 DISTI # SP000011056	Infineon Technologies AG	Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 T/R (Alt: SP000011056) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 3000	3000:€0.0679 6000:€0.0639 12000:€0.0599 18000:€0.0579 30000:€0.0559
BFR 193 E6327 DISTI # SP000011056	Infineon Technologies AG	Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 T/R (Alt: SP000011056) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.1109 6000:€0.0859 12000:€0.0699 18000:€0.0599 30000:€0.0549
BFR193E6327HTSA1 DISTI # BFR193E6327HTSA1	Infineon Technologies AG	Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BFR193E6327HTSA1) RoHS: Compliant Min Qty: 15000 Container: Reel	Americas - 0	15000:$0.0679 21000:$0.0639 36000:$0.0639 75000:$0.0639 150000:$0.0619
BFR193E6327HTSA1 DISTI # 79Y4025	Infineon Technologies AG	TRANSISTOR, RF, NPN, 12V, 8GHZ, SOT-23-3,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:580mW,DC Collector Current:80mA,DC Current Gain hFE:70hFE,RF Transistor RoHS Compliant: Yes	4979	1000:$0.1050 500:$0.1150 250:$0.1260 100:$0.1360 50:$0.1960 25:$0.2570 10:$0.3170 1:$0.4900
BFR193E6327HTSA1. DISTI # 25AC6335	Infineon Technologies AG	Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:12V,Transition Frequency ft:8GHz,Power Dissipation Pd:580mW,DC Collector Current:80mA,DC Current Gain hFE:70hFE,RF Transistor Case:SOT-23,No. of Pins:3Pins RoHS Compliant: Yes	0	150000:$0.0620 21000:$0.0640 1:$0.0680
BFR 193 E6327 DISTI # 726-BFR193E6327	Infineon Technologies AG	RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW RoHS: Compliant	35393	1:$0.4900 10:$0.3170 100:$0.1360 1000:$0.1050 3000:$0.0800 9000:$0.0710 24000:$0.0660
BFR193E6327HTSA1 DISTI # 726-BFR193E6327HTSA1	Infineon Technologies AG	RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW RoHS: Compliant	23924	1:$0.4900 10:$0.3170 100:$0.1360 1000:$0.1050 3000:$0.0800 9000:$0.0710 24000:$0.0660
BFR193E6327HTSA1	Infineon Technologies AG	BFR193 Series 12 V 80 mA Low Noise Silicon Bipolar RF Transistor - SOT-23-3 RoHS: Compliant	501000Reel	3000:$0.0722 6000:$0.0626 15000:$0.0617
BFR193E6327HTSA1 DISTI # 8235538	Infineon Technologies AG	RF TRANSISTOR NPN 12V LOW NOISE SOT23, PK	625	500:£0.0560 250:£0.0600 125:£0.0640 50:£0.0830 25:£0.1560
BFR193E6327HTSA1 DISTI # 8235538P	Infineon Technologies AG	RF TRANSISTOR NPN 12V LOW NOISE SOT23, RL	14200	500:£0.0560 250:£0.0600 125:£0.0640 50:£0.0830
BFR193E6327	Siemens	UHF BAND, SI, NPN, RF SMALL SIGNAL TRANSISTOR	2392	209:$0.1600 26:$0.2400 1:$0.8000
BFR193E6327	Infineon Technologies AG	UHF BAND, SI, NPN, RF SMALL SIGNAL TRANSISTOR	480	183:$0.2750 46:$0.3300 1:$0.5500
BFR193E6327 DISTI # BFR193E6327	Infineon Technologies AG	Transistor: NPN,bipolar,RF,20V,80mA,580mW,SOT23	1027	5:$0.1603 25:$0.1358 100:$0.1079 250:$0.1003
BFR193 E6327 DISTI # THF4853	Infineon Technologies AG	NPN RF-Trans. 12V80mA SOT23 RoHS: Compliant	Stock DE - 42000Stock HK - 0Stock US - 0	3000:$0.1380 6000:$0.1283 12000:$0.1221 15000:$0.1104 45000:$0.1014
BFR193E6327	Infineon Technologies AG	RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN RoHS: Compliant	Europe - 1885
BFR193E6327	Siemens		3067
BFR193E6327	Infineon Technologies AG		10795
BFR193-E6327		INSTOCK	1104
BFR193-E6327	Siemens	INSTOCK	5000
BFR 193 E6327	Infineon Technologies AG		671
BFR193E6327HTSA1 DISTI # 2432737	Infineon Technologies AG	TRANSISTOR, RF, NPN, 12V, 8GHZ, SOT-23-3 RoHS: Compliant	7299	500:£0.0566 250:£0.0606 100:£0.0657 25:£0.0848 5:£0.2370
BFR193E6327HTSA1 DISTI # 2432737	Infineon Technologies AG	TRANSISTOR, RF, NPN, 12V, 8GHZ, SOT-23-3 RoHS: Compliant	4979	24000:$0.1040 9000:$0.1130 3000:$0.1280 1000:$0.1660 100:$0.2160 10:$0.5020 1:$0.7750
BFR 193 E6327	Infineon Technologies AG	RoHS(ship within 1day)	600	1:$0.7800 10:$0.5900 50:$0.3300 100:$0.2000 500:$0.1300 1000:$0.1100

画像	モデル	説明
	Mfr.#: BFR 193 E6327 OMO.#: OMO-BFR-193-E6327	RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW
	Mfr.#: BFR 193F H6327 OMO.#: OMO-BFR-193F-H6327	RF Bipolar Transistors RF BIP TRANSISTOR
	Mfr.#: BFR 193L3 E6327 OMO.#: OMO-BFR-193L3-E6327	RF Bipolar Transistors NPN Silicon RF TRANSISTOR
	Mfr.#: BFR 193W E6327 OMO.#: OMO-BFR-193W-E6327	RF Bipolar Transistors NPN Silicon RF TRANSISTOR
	Mfr.#: BFR 193L3E6327 OMO.#: OMO-BFR-193L3E6327-1190	ブランドニューオリジナル
	Mfr.#: BFR 193W E6327 OMO.#: OMO-BFR-193W-E6327-INFINEON-TECHNOLOGIES	RF TRANS NPN 12V 8GHZ SOT323-3
	Mfr.#: BFR 193W H6327 OMO.#: OMO-BFR-193W-H6327-317	RF Bipolar Transistors RF BIP TRANSISTOR
	Mfr.#: BFR 193F H6327 OMO.#: OMO-BFR-193F-H6327-317	RF Bipolar Transistors RF BIP TRANSISTOR
	Mfr.#: BFR 193F E6327 OMO.#: OMO-BFR-193F-E6327-317	RF Bipolar Transistors NPN Silicon RF TRANSISTOR
	Mfr.#: BFR 193 E6327 OMO.#: OMO-BFR-193-E6327-317	RF Bipolar Transistors NPN RF Transistor 12V 80mA 580mW

BFR 193 E6327

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes