CSD17312Q5

Mfr. #:: CSD17312Q5
説明:: RF Bipolar Transistors MOSFET 30V N-Channel NexFET Power MOSFET
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詳しくは:: CSD17312Q5 詳しくは CSD17312Q5 Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: FET-シングル

シリーズ: NexFET

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: 8-PowerTDFN

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 8-VSON (5x6)

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 3.2W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 30V

入力-静電容量-Ciss-Vds: 5240pF @ 15V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 38A (Ta), 100A (Tc)

Rds-On-Max-Id-Vgs: 1.5 mOhm @ 35A, 8V

Vgs-th-Max-Id: 1.5V @ 250μA

ゲートチャージ-Qg-Vgs: 36nC @ 4.5V

Pd-電力損失: 3.2 W

最高作動温度: + 150 C

最低作動温度: - 55 C

Vgs-Gate-Source-Voltage: 10 V

Id-連続-ドレイン-電流: 38 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.1 V

Rds-On-Drain-Source-Resistance: 1.7 mOhms

トランジスタ-極性: Nチャネル

Qg-Gate-Charge: 28 nC

フォワード-相互コンダクタンス-最小: 200 S

Tags: CSD1731, CSD173, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17312Q5 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD17312Q5 DISTI # V72:2272_07248765	Trans MOSFET N-CH 30V 38A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	40	2501:$0.8682 1:$0.9000 25:$1.7898 10:$1.7906
CSD17312Q5 DISTI # 296-27613-1-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1628In Stock	1000:$1.0903 500:$1.3158 100:$1.6918 10:$2.1050 1:$2.3300
CSD17312Q5 DISTI # 296-27613-6-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1628In Stock	1000:$1.0903 500:$1.3158 100:$1.6918 10:$2.1050 1:$2.3300
CSD17312Q5 DISTI # 296-27613-2-ND	MOSFET N-CH 30V 100A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$1.0220
CSD17312Q5 DISTI # 30647596	Trans MOSFET N-CH 30V 38A 8-Pin VSON-CLIP EP T/R RoHS: Compliant	40	25:$1.7900 10:$1.7908 7:$2.0914
CSD17312Q5 DISTI # CSD17312Q5	Trans MOSFET N-CH 30V 100A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17312Q5) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 5000	2500:$1.0589 5000:$1.0079 10000:$0.9739 15000:$0.9409 25000:$0.9149
CSD17312Q5 DISTI # 73T8729	MOSFET Transistor, N Channel, 35 A, 30 V, 1.2 mohm, 8 V, 1.1 V RoHS Compliant: Yes	0
CSD17312Q5	30V N-Channel NexFET&#153,Power MOSFET	3669	1000:$0.8300 750:$0.9100 500:$1.1000 250:$1.3100 100:$1.4200 25:$1.6400 10:$1.7600 1:$1.9600
CSD17312Q5	Power Field-Effect Transistor, 38A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	576	1000:$0.9600 500:$1.0100 100:$1.0500 25:$1.1000 1:$1.1800
CSD17312Q5 DISTI # 595-CSD17312Q5	MOSFET 30V N-Channel NexFET Power MOSFET RoHS: Compliant	95	1:$2.1500 10:$1.8300 100:$1.4600 500:$1.2800 1000:$1.0600 2500:$0.9860
CSD17312Q5		131
CSD17312Q5 DISTI # 2064666	MOSFET, N-CH, 30V, 100A, 8SON RoHS: Compliant	0	2500:$1.5700 1000:$1.6800 500:$2.0300 100:$2.3200 10:$2.9000 1:$3.4100

画像	モデル	説明
	Mfr.#: CSD17318Q2T OMO.#: OMO-CSD17318Q2T	MOSFET 30V, N ch NexFET MOSFETG , single SON2x2, 16.9mOhm 6-WSON -55 to 150
	Mfr.#: CSD17551Q3A OMO.#: OMO-CSD17551Q3A	MOSFET 30V N-Chnl MOSFET
	Mfr.#: CSD17308Q3 G4 OMO.#: OMO-CSD17308Q3-G4-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17483F4T OMO.#: OMO-CSD17483F4T-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 1.5A 3PICOSTAR
	Mfr.#: CSD17510 OMO.#: OMO-CSD17510-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD17578Q3AT OMO.#: OMO-CSD17578Q3AT-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 35A 8VSON
	Mfr.#: CSD17570Q5B OMO.#: OMO-CSD17570Q5B-TEXAS-INSTRUMENTS	RF Bipolar Transistors MOSFET 30V N-Ch Pwr MOSFET
	Mfr.#: CSD17304Q3 OMO.#: OMO-CSD17304Q3-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 56A 8SON
	Mfr.#: CSD17308Q3 OMO.#: OMO-CSD17308Q3-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 47A 8SON
	Mfr.#: CSD17527Q5A OMO.#: OMO-CSD17527Q5A-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 65A 8SON

CSD17312Q5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes