IPD80R1K0CEATMA1

Mfr. #:: IPD80R1K0CEATMA1
メーカー:: Infineon Technologies
説明:: MOSFET N-CH 800V 5.7A TO252-3
ライフサイクル:: メーカー新製品
データシート:: IPD80R1K0CEATMA1 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: IPD80R1K0CEATMA1 詳しくは

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: XPD80R1

包装: リール

パーツエイリアス: IPD80R1K0CE SP001130974

単位重量: 0.139332 oz

取り付けスタイル: SMD / SMT

商標名: CoolMOS

パッケージ-ケース: TO-252-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 83 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 8 ns

立ち上がり時間: 15 ns

Vgs-Gate-Source-Voltage: 30 V

Id-連続-ドレイン-電流: 5.7 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 800 V

Vgs-th-Gate-Source-Threshold-Voltage: 3 V

Rds-On-Drain-Source-Resistance: 800 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 72 ns

典型的なターンオン遅延時間: 25 ns

Qg-Gate-Charge: 31 nC

Tags: IPD80R1K0, IPD80R1, IPD80R, IPD80, IPD8, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD80R1K0CEATMA1 説明

***ure Electronics: N-Channel 800 V 0.95 O 31 nC CoolMOS CE Power Transistor - DPAK

***p One Stop Japan: Trans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R

***ineon SCT: 800V CoolMOS™ CE is Infineon’s high performance device family offering 800 volts break down voltage, PG-TO252-3, RoHS

***ineon: 800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting

IPD80R1K0CEATMA1 詳しくは

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ CE Power MOSFETs: Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

Market price

モデル	メーカー	説明	ストック	価格
IPD80R1K0CEATMA1 DISTI # V72:2272_06383396	Infineon Technologies AG	Trans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1913	1000:$0.6195 500:$0.7917 250:$0.9043 100:$0.9414 25:$1.0984 10:$1.2205 1:$1.5682
IPD80R1K0CEATMA1 DISTI # V36:1790_06383396	Infineon Technologies AG	Trans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	0	2500000:$0.5123 1250000:$0.5127 250000:$0.5501 25000:$0.6208 2500:$0.6329
IPD80R1K0CEATMA1 DISTI # IPD80R1K0CEATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 5.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2117In Stock	1000:$0.7135 500:$0.9037 100:$1.0940 10:$1.4030 1:$1.5700
IPD80R1K0CEATMA1 DISTI # IPD80R1K0CEATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 5.7A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2117In Stock	1000:$0.7135 500:$0.9037 100:$1.0940 10:$1.4030 1:$1.5700
IPD80R1K0CEATMA1 DISTI # IPD80R1K0CEATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 5.7A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	12500:$0.5911 5000:$0.6142 2500:$0.6465
IPD80R1K0CEATMA1 DISTI # 33632580	Infineon Technologies AG	Trans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2500	2500:$0.5508
IPD80R1K0CEATMA1 DISTI # 29716466	Infineon Technologies AG	Trans MOSFET N-CH 800V 5.7A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	1913	12:$1.5682
IPD80R1K0CEATMA1 DISTI # IPD80R1K0CEATMA1	Infineon Technologies AG	Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R1K0CEATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 2500	25000:$0.5579 15000:$0.5679 10000:$0.5879 5000:$0.6099 2500:$0.6329
IPD80R1K0CEATMA1 DISTI # SP001130974	Infineon Technologies AG	Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R (Alt: SP001130974) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.5229 15000:€0.5629 10000:€0.6099 5000:€0.6649 2500:€0.8129
IPD80R1K0CEATMA1 DISTI # 97Y1825	Infineon Technologies AG	MOSFET, N-CH, 800V, 5.7A, TO-252-3,Transistor Polarity:N Channel,Continuous Drain Current Id:5.7A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	2500	1000:$0.6670 500:$0.8440 250:$0.9000 100:$0.9550 50:$1.0500 25:$1.1500 10:$1.2400 1:$1.4500
IPD80R1K0CEATMA1 DISTI # 726-IPD80R1K0CEATMA1	Infineon Technologies AG	MOSFET N-Ch 800V 5.7A DPAK-2 RoHS: Compliant	6199	1:$1.4400 10:$1.2300 100:$0.9460 500:$0.8360 1000:$0.6600
IPD80R1K0CEATMA1 DISTI # 9140223P	Infineon Technologies AG	MOSFET N-CHANNEL 800V 18A COOLMOS TO252, RL	6740	500:£0.5900 200:£0.6450 50:£0.7310
IPD80R1K0CEATMA1 DISTI # 2617465	Infineon Technologies AG	MOSFET, N-CH, 800V, 5.7A, TO-252-3	2558	500:£0.6440 250:£0.6870 100:£0.7290 10:£0.9970 1:£1.2600
IPD80R1K0CEATMA1 DISTI # 2617465	Infineon Technologies AG	MOSFET, N-CH, 800V, 5.7A, TO-252-3 RoHS: Compliant	33	1000:$1.0800 500:$1.3700 100:$1.6500 10:$2.1200 1:$2.3700

画像	モデル	説明
	Mfr.#: IPD80R1K4CEATMA1 OMO.#: OMO-IPD80R1K4CEATMA1	MOSFET N-Ch 800V 3.9A DPAK-2
	Mfr.#: IPD80R1K2P7ATMA1-CUT TAPE OMO.#: OMO-IPD80R1K2P7ATMA1-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: IPD80R1K0CEATMA1/INFINEO OMO.#: OMO-IPD80R1K0CEATMA1-INFINEO-1190	ブランドニューオリジナル
	Mfr.#: IPD80R1K0CEBTMA1 , 2SD24 OMO.#: OMO-IPD80R1K0CEBTMA1-2SD24-1190	ブランドニューオリジナル
	Mfr.#: IPD80R1K2P7ATMA1 OMO.#: OMO-IPD80R1K2P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 800V 4.5A TO252-3
	Mfr.#: IPD80R1K4CE OMO.#: OMO-IPD80R1K4CE-1190	Trans MOSFET N-CH 800V 3.9A 3-Pin TO-252 T/R (Alt: IPD80R1K4CE)
	Mfr.#: IPD80R1K4CEATMA1 , 2SD24 OMO.#: OMO-IPD80R1K4CEATMA1-2SD24-1190	ブランドニューオリジナル
	Mfr.#: IPD80R1K0CEBTMA1 OMO.#: OMO-IPD80R1K0CEBTMA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 800V 5.7A DPAK-2
	Mfr.#: IPD80R1K4CEBTMA1 OMO.#: OMO-IPD80R1K4CEBTMA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 800V 3.9A DPAK-2
	Mfr.#: IPD80R1K4CEATMA1 OMO.#: OMO-IPD80R1K4CEATMA1-INFINEON-TECHNOLOGIES	MOSFET N-Ch 800V 3.9A DPAK-2

IPD80R1K0CEATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes