IPD80R1K0CEBTMA1

IPD80R1K0CEBTMA1
Mfr. #:
IPD80R1K0CEBTMA1
メーカー:
Infineon Technologies
説明:
MOSFET N-Ch 800V 5.7A DPAK-2
ライフサイクル:
メーカー新製品
データシート:
IPD80R1K0CEBTMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
シリーズ
XPD80R1
包装
リール
パーツエイリアス
IPD80R1K0CE SP001100606
単位重量
0.139332 oz
取り付けスタイル
SMD / SMT
パッケージ-ケース
TO-252-3
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
83 W
最高作動温度
+ 150 C
最低作動温度
- 55 C
立ち下がり時間
8 ns
立ち上がり時間
15 ns
Vgs-Gate-Source-Voltage
30 V
Id-連続-ドレイン-電流
5.7 A
Vds-ドレイン-ソース-ブレークダウン-電圧
800 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Rds-On-Drain-Source-Resistance
950 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
72 ns
典型的なターンオン遅延時間
25 ns
Qg-Gate-Charge
31 nC
Tags
IPD80R1K0, IPD80R1, IPD80R, IPD80, IPD8, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R
***i-Key
MOSFET N-CH 800V 5.7A TO252-3
***ronik
N-CH 800V 5,7A 950mOhm TO252
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
モデル メーカー 説明 ストック 価格
IPD80R1K0CEBTMA1
DISTI # IPD80R1K0CEBTMA1TR-ND
Infineon Technologies AGMOSFET N-CH 800V 5.7A TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    IPD80R1K0CEBTMA1
    DISTI # IPD80R1K0CEBTMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 800V 5.7A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPD80R1K0CEBTMA1
      DISTI # IPD80R1K0CEBTMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 800V 5.7A TO252-3
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPD80R1K0CEBTMA1
        DISTI # SP001100606
        Infineon Technologies AGTrans MOSFET N-CH 800(Min)V 5.7A 3-Pin TO-252 T/R (Alt: SP001100606)
        RoHS: Compliant
        Min Qty: 2500
        Container: Tape and Reel
        Europe - 10
        • 25000:€0.5539
        • 15000:€0.5919
        • 10000:€0.6789
        • 5000:€0.8139
        • 2500:€0.9699
        画像 モデル 説明
        IPD80R1K4CEATMA1

        Mfr.#: IPD80R1K4CEATMA1

        OMO.#: OMO-IPD80R1K4CEATMA1

        MOSFET N-Ch 800V 3.9A DPAK-2
        IPD80R1K0CEATMA1

        Mfr.#: IPD80R1K0CEATMA1

        OMO.#: OMO-IPD80R1K0CEATMA1

        MOSFET N-Ch 800V 5.7A DPAK-2
        IPD80R1K2P7ATMA1-CUT TAPE

        Mfr.#: IPD80R1K2P7ATMA1-CUT TAPE

        OMO.#: OMO-IPD80R1K2P7ATMA1-CUT-TAPE-1190

        ブランドニューオリジナル
        IPD80R1K0CE

        Mfr.#: IPD80R1K0CE

        OMO.#: OMO-IPD80R1K0CE-1190

        Trans MOSFET N 800V 5.7A 3-Pin TO-252 T/R (Alt: IPD80R1K0CE)
        IPD80R1K0CEATMA1

        Mfr.#: IPD80R1K0CEATMA1

        OMO.#: OMO-IPD80R1K0CEATMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 800V 5.7A TO252-3
        IPD80R1K2P7ATMA1

        Mfr.#: IPD80R1K2P7ATMA1

        OMO.#: OMO-IPD80R1K2P7ATMA1-INFINEON-TECHNOLOGIES

        MOSFET N-CH 800V 4.5A TO252-3
        IPD80R1K4CE

        Mfr.#: IPD80R1K4CE

        OMO.#: OMO-IPD80R1K4CE-1190

        Trans MOSFET N-CH 800V 3.9A 3-Pin TO-252 T/R (Alt: IPD80R1K4CE)
        IPD80R1K4CEBTMA1 , 2SD24

        Mfr.#: IPD80R1K4CEBTMA1 , 2SD24

        OMO.#: OMO-IPD80R1K4CEBTMA1-2SD24-1190

        ブランドニューオリジナル
        IPD80R1K0CEBTMA1

        Mfr.#: IPD80R1K0CEBTMA1

        OMO.#: OMO-IPD80R1K0CEBTMA1-INFINEON-TECHNOLOGIES

        MOSFET N-Ch 800V 5.7A DPAK-2
        IPD80R1K4CEBTMA1

        Mfr.#: IPD80R1K4CEBTMA1

        OMO.#: OMO-IPD80R1K4CEBTMA1-INFINEON-TECHNOLOGIES

        MOSFET N-Ch 800V 3.9A DPAK-2
        可用性
        ストック:
        Available
        注文中:
        1000
        数量を入力してください:
        IPD80R1K0CEBTMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格(USD)
        単価
        小計金額
        1
        $0.94
        $0.94
        10
        $0.90
        $8.97
        100
        $0.85
        $84.97
        500
        $0.80
        $401.25
        1000
        $0.76
        $755.30
        皮切りに
        最新の製品
        • M-SERIES D-Sub Connectors
          The M-SERIES D-Sub connectors offer high reliability performance for the most challenging design applications.
        • TLV493D-A1B6 3D Magnetic Sensor
          Infineon's combination of 3-axis measurement in a small package, with low power consumption, provides the TLV493D-A1B6 contactless position sensing.
        • Compare IPD80R1K0CEBTMA1
          IPD80R1K0CE vs IPD80R1K0CEATMA1 vs IPD80R1K0CEATMA1INFINEO
        • IR25750 Current Sensing IC
          IR25750’s gate-drive input provides the VCC supply voltage to the IC and synchronizes the RDS(ON) or VCE(ON) sensing circuit.
        • 600 V Trench Ultra-Fast IGBTs
          International Rectifier's 40 A IRGP4640D, 50A IRGP4650D and 60A IRGP4660d IGBTs utilize trench thin wafer technology to offer lower conduction and switching losses.
        • DPS310 Digital Barometric Pressure Sensors
          Infineon's DPS310XTSA1 is a miniaturized digital barometric air pressure sensor with high accuracy, high stability, and low current consumption.
        Top