CSD13306WT

Mfr. #:: CSD13306WT
説明:: MOSFET N-CH 12V 6DSBGA
ライフサイクル:: メーカー新製品
データシート:: CSD13306WT データシート
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ECAD Model:
詳しくは:: CSD13306WT 詳しくは CSD13306WT Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: CSD13306W

包装: リール

単位重量: 0.000060 oz

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: DSBGA-6

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 1.9 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 8 ns

立ち上がり時間: 11 ns

Vgs-Gate-Source-Voltage: 10 V

Id-連続-ドレイン-電流: 3.5 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 12 V

Vgs-th-Gate-Source-Threshold-Voltage: 700 mV

Rds-On-Drain-Source-Resistance: 15.5 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 20 ns

典型的なターンオン遅延時間: 7 ns

Qg-Gate-Charge: 8.6 nC

フォワード-相互コンダクタンス-最小: 15 S

チャネルモード: 強化

Tags: CSD1330, CSD133, CSD13, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD13306WT 説明

***as Instruments: 12V, N ch NexFET MOSFET™, single WLP 1.0x1.5, 10.2mOhm 6-DSBGA -55 to 150

***et: Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R

***i-Key: MOSFET N-CH 12V 6DSBGA

CSD13306WT 詳しくは

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD13306WT DISTI # 296-41134-1-ND	MOSFET N-CH 12V 6DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1880In Stock	100:$0.4202 10:$0.5600 1:$0.6700
CSD13306WT DISTI # 296-41134-6-ND	MOSFET N-CH 12V 6DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1880In Stock	100:$0.4202 10:$0.5600 1:$0.6700
CSD13306WT DISTI # 296-41134-2-ND	MOSFET N-CH 12V 6DSBGA RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	1750In Stock	1250:$0.2312 750:$0.2584 500:$0.2992 250:$0.3536
CSD13306WT DISTI # CSD13306WT	Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R (Alt: CSD13306WT) RoHS: Compliant Min Qty: 250 Container: Tape and Reel	Asia - 0
CSD13306WT DISTI # CSD13306WT	Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R - Tape and Reel (Alt: CSD13306WT) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 0	2000:$0.1969 2500:$0.1869 4500:$0.1809 10000:$0.1749 20000:$0.1699
CSD13306WT	CSD13306W 12 V N-Channel NexFET&#153,Power MOSFET	500	1000:$0.1600 750:$0.1700 500:$0.2200 250:$0.2700 100:$0.2900 25:$0.3400 10:$0.3600 1:$0.4100
CSD13306W DISTI # 595-CSD13306W	MOSFET CSD13306W 12 V N-Channel NexFET Power MOSFET 6-DSBGA RoHS: Compliant	3100	1:$0.5200 10:$0.4300 100:$0.2620 1000:$0.2030 3000:$0.1730 9000:$0.1610 24000:$0.1530 45000:$0.1490
CSD13306WT DISTI # 595-CSD13306WT	MOSFET 12V N-Channel NexFET Power MOSFET RoHS: Compliant	0	1:$0.5900 10:$0.4900 100:$0.3000 250:$0.3000 1000:$0.2320 2500:$0.1980 10000:$0.1840 25000:$0.1750
CSD13306WT	Small Signal Field-Effect Transistor RoHS: Compliant	250	1000:$0.1800 500:$0.1900 100:$0.2000 25:$0.2100 1:$0.2300

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