RJH1CF5RDPQ-80#T2

Mfr. #:: RJH1CF5RDPQ-80#T2
メーカー:: Renesas Electronics
説明:: IGBT Transistors IGBT
ライフサイクル:: メーカー新製品
データシート:: RJH1CF5RDPQ-80#T2 データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー：: ルネサスエレクトロニクス

製品カテゴリ：: IGBTトランジスタ

JBoss：: Y

テクノロジー：: Si

包装：: チューブ

ブランド：: ルネサスエレクトロニクス

感湿性：: はい

製品タイプ：: IGBTトランジスタ

ファクトリーパックの数量：: 1

サブカテゴリ：: IGBT

Tags: RJH1CF5RDPQ-8, RJH1CF5RD, RJH1CF5R, RJH1CF5, RJH1CF, RJH1C, RJH1, RJH

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RJH1CF5RDPQ-80#T2 説明

***et Europe: Trans IGBT Chip N-CH 1.2KV 50A 3-Pin TO-247A Tube

***ponent Stockers USA: 50 A 1200 V N-CHANNEL IGBT TO-247

***DA Technology Co., Ltd.: Product Description Demo for Development.

***ernational Rectifier: 1200V UltraFast Discrete IGBT in a TO-247 package with UltraFast Soft Recovery Diode

***ical: Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AC Tube

***ment14 APAC: TRANSISTOR, BIPOLAR, N CHANNEL, 1.2KV, TO-247AD; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.9V; Power Dissipation Pd:180W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:3Pins; Product Range:-

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

***ure Electronics: IGBT Transistors 1200V/25 FAST IGBT FSII T

***i-Key: IGBT FIELD STOP 1200V 50A TO247

***ernational Rectifier: 1200V UltraFast Discrete IGBT in a TO-247 package with Ultra-Low Vf Diode

***ical: Trans IGBT Chip N-CH 1200V 50A 179000mW 3-Pin(3+Tab) TO-247AD Tube

*** Source Electronics: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS | IGBT 1200V 50A 179W TO247

***ical: Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247

***icroelectronics SCT: Trench gate field-stop IGBT, TO-247 long leads, Tube

***ical: Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247

***ark: 1200V/25 Fast Igbt Only Fsii To-247 / Tube

画像	モデル	説明
	Mfr.#: RJH1CF5RDPQ-80#T2 OMO.#: OMO-RJH1CF5RDPQ-80-T2	IGBT Transistors IGBT
	Mfr.#: RJH1CF5RDPQ-80-T2 OMO.#: OMO-RJH1CF5RDPQ-80-T2-1190	ブランドニューオリジナル
	Mfr.#: RJH1CF5R OMO.#: OMO-RJH1CF5R-1190	ブランドニューオリジナル
	Mfr.#: RJH1CF5RDPQ OMO.#: OMO-RJH1CF5RDPQ-1190	ブランドニューオリジナル
	Mfr.#: RJH1CF5RDPQ,RJH1CF5RDPQ- OMO.#: OMO-RJH1CF5RDPQ-RJH1CF5RDPQ--1190	ブランドニューオリジナル
	Mfr.#: RJH1CF5RDPQ-80 OMO.#: OMO-RJH1CF5RDPQ-80-1190	ブランドニューオリジナル

RJH1CF5RDPQ-80#T2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes