CGHV1F025S

Mfr. #:: CGHV1F025S
メーカー:: N/A
説明:: RF MOSFET HEMT 40V 12DFN
ライフサイクル:: メーカー新製品
データシート:: CGHV1F025S データシート
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ECAD Model:
詳しくは:: CGHV1F025S 詳しくは

製品属性
属性値

メーカー: Wolfspeed / Cree

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

包装: リール

取り付けスタイル: SMD / SMT

動作-温度-範囲: - 40 C to + 150 C

パッケージ-ケース: DFN-12

テクノロジー: GaN SiC

構成: 独身

トランジスタタイプ: HEMT

利得: 11 dB

クラス: -

出力電力: 25 W

Pd-電力損失: -

最高作動温度: + 150 C

最低作動温度: - 40 C

応用: -

動作周波数: 15 GHz

Id-連続-ドレイン-電流: 2 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 100 V

Vgs-th-Gate-Source-Threshold-Voltage: - 3 V

Rds-On-Drain-Source-Resistance: -

トランジスタ-極性: Nチャネル

フォワード-相互コンダクタンス-最小: -

開発キット: CGHV1F025S-TB

Vgs-ゲート-ソース-ブレークダウン-電圧: - 10 V to + 2 V

ゲート-ソース-カットオフ-電圧: -

最大ドレインゲート電圧: -

NF-雑音指数: -

P1dB-圧縮ポイント: -

Tags: CGHV1F, CGHV1, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV1F025S 説明

***i-Key: RF MOSFET HEMT 40V 12DFN

***hardson RFPD: RF POWER TRANSISTOR

CGHV1F025S 詳しくは

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

モデル	メーカー	説明	ストック	価格
CGHV1F025S-AMP1 DISTI # CGHV1F025S-AMP1-ND	Wolfspeed	DEMO HEMT TRANS AMP1 CGHV1F025S RoHS: Compliant Min Qty: 1 Container: Bulk	1In Stock	1:$637.4400
CGHV1F025S DISTI # CGHV1F025STR-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 250 Container: Tape & Reel (TR)	Temporarily Out of Stock	250:$87.4405
CGHV1F025S DISTI # CGHV1F025SCT-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	100:$96.1846 1:$97.9300
CGHV1F025S DISTI # CGHV1F025SDKR-ND	Wolfspeed	RF MOSFET HEMT 40V 12DFN RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	100:$96.1846 1:$97.9300
CGHV1F025S DISTI # 941-CGHV1F025S	Cree, Inc.	RF JFET Transistors GaN HEMT DC-15GHz, 25 Watt RoHS: Compliant	0	1:$87.4400
CGHV1F025S-AMP1 DISTI # 941-CGHV1F025S-AMP1	Cree, Inc.	RF Development Tools Test Board with GaN HEMT RoHS: Compliant	1	1:$637.4400

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