SI8466EDB-T2-E1

Name: Vishay - SI8466EDB-T2-E1
Brand: Vishay
SKU: OMO-2826835
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8466EDB-T2-E1
メーカー:: Vishay
説明:: IGBT Transistors MOSFET 8V 5.4A 1.8W 43mOhms @ 4.5V
ライフサイクル:: メーカー新製品
データシート:: SI8466EDB-T2-E1 データシート
配達:: DHL FedEx Ups TNT EMS
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詳しくは:: SI8466EDB-T2-E1 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

商標名: MICROFOOT TrenchFET

パッケージ-ケース: 4-UFBGA, WLCSP

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 4-Microfoot

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 780mW

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 8V

入力-静電容量-Ciss-Vds: 710pF @ 4V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: -

Rds-On-Max-Id-Vgs: 43 mOhm @ 2A, 4.5V

Vgs-th-Max-Id: 700mV @ 250μA

ゲートチャージ-Qg-Vgs: 13nC @ 4.5V

Pd-電力損失: 1.8 W

立ち下がり時間: 20 ns

立ち上がり時間: 30 ns

Vgs-Gate-Source-Voltage: 700 mV

Id-連続-ドレイン-電流: 5.4 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 8 V

Vgs-th-Gate-Source-Threshold-Voltage: 700 mV

Rds-On-Drain-Source-Resistance: 43 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 80 ns

典型的なターンオン遅延時間: 20 ns

Qg-Gate-Charge: 13 nC

フォワード-相互コンダクタンス-最小: 30 S

Tags: SI846, SI84, SI8

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8466EDB-T2-E1 説明

***ical: Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R

***ark: N-Channel 8-V (D-S) Mosfet Rohs Compliant: No

***et: N-CH MOSFET MFOOT 1X1 8V 43MOHM @ 4.5V

***i-Key: MOSFET N-CH 8V 3.6A MICROFOOT

SI8466EDB-T2-E1 詳しくは

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Market price

モデル	メーカー	説明	ストック	価格
SI8466EDB-T2-E1 DISTI # V72:2272_09216592	Vishay Intertechnologies	Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R RoHS: Compliant	1632	1000:$0.1651 500:$0.2050 250:$0.2403 100:$0.2430 25:$0.3052 10:$0.3089 1:$0.3788
SI8466EDB-T2-E1 DISTI # SI8466EDB-T2-E1CT-ND	Vishay Siliconix	MOSFET N-CH 8V 3.6A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	15174In Stock	1000:$0.2119 500:$0.2742 100:$0.3739 10:$0.4990 1:$0.5900
SI8466EDB-T2-E1 DISTI # SI8466EDB-T2-E1DKR-ND	Vishay Siliconix	MOSFET N-CH 8V 3.6A MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	15174In Stock	1000:$0.2119 500:$0.2742 100:$0.3739 10:$0.4990 1:$0.5900
SI8466EDB-T2-E1 DISTI # SI8466EDB-T2-E1TR-ND	Vishay Siliconix	MOSFET N-CH 8V 3.6A MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	15000In Stock	3000:$0.1875
SI8466EDB-T2-E1 DISTI # 25790159	Vishay Intertechnologies	Trans MOSFET N-CH 8V 5.4A 4-Pin Micro Foot T/R RoHS: Compliant	1632	1000:$0.1651 500:$0.2050 250:$0.2403 100:$0.2430 45:$0.3052
SI8466EDB-T2-E1 DISTI # SI8466EDB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 8V 5.4A 4-Pin MICRO FOOT T/R - Tape and Reel (Alt: SI8466EDB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 3000	3000:$0.1829 6000:$0.1829 12000:$0.1819 18000:$0.1819 30000:$0.1809
SI8466EDB-T2-E1 DISTI # 67X6880	Vishay Intertechnologies	N-CHANNEL 8-V (D-S) MOSFET	0	1:$0.1900 5000:$0.1850 10000:$0.1710 20000:$0.1600 30000:$0.1490 50000:$0.1420
SI8466EDB-T2-E1 DISTI # 78-SI8466EDB-T2-E1	Vishay Intertechnologies	MOSFET 8V Vds 5V Vgs MICRO FOOT 1 x 1 RoHS: Compliant	5844	1:$0.5300 10:$0.3980 100:$0.2950 500:$0.2430 1000:$0.1880 3000:$0.1710 6000:$0.1600 9000:$0.1490 24000:$0.1430
SI8466EDB-T2-E1 DISTI # C1S803603975991	Vishay Intertechnologies	MOSFETs	1632	250:$0.2403 100:$0.2430 25:$0.3052 10:$0.3089

SI8466EDB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes