SI4464DY-T1-E3

Mfr. #:: SI4464DY-T1-E3
メーカー:: Vishay
説明:: MOSFET N-CH 200V 1.7A 8-SOIC
ライフサイクル:: メーカー新製品
データシート:: SI4464DY-T1-E3 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: SI4464DY-T1-E3 詳しくは

製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI4464DY-T1

単位重量: 0.006596 oz

取り付けスタイル: SMD / SMT

商標名: TrenchFET

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 8-SO

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 1.5W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 200V

入力-静電容量-Ciss-Vds: -

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 1.7A (Ta)

Rds-On-Max-Id-Vgs: 240 mOhm @ 2.2A, 10V

Vgs-th-Max-Id: 4V @ 250μA

ゲートチャージ-Qg-Vgs: 18nC @ 10V

Pd-電力損失: 1.5 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 12 ns

立ち上がり時間: 12 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 1.7 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 200 V

Rds-On-Drain-Source-Resistance: 240 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 15 ns

典型的なターンオン遅延時間: 10 ns

チャネルモード: 強化

Tags: SI4464DY-T1, SI4464D, SI4464, SI446, SI44, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4464DY-T1-E3 詳しくは

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

モデル	メーカー	説明	ストック	価格
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12459In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12459In Stock	1000:$0.5646 500:$0.7151 100:$0.9221 10:$1.1670 1:$1.3200
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 200V 1.7A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	10000In Stock	2500:$0.5116
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R (Alt: SI4464DY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.7209 5000:€0.4919 10000:€0.4229 15000:€0.3909 25000:€0.3639
SI4464DY-T1-E3 DISTI # SI4464DY-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4464DY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4519 5000:$0.4389 10000:$0.4209 15000:$0.4089 25000:$0.3979
SI4464DY-T1-E3 DISTI # 35K3467	Vishay Intertechnologies	N CH MOSFET, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):195mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes	0	1:$0.6250 2500:$0.6200 5000:$0.6020 10000:$0.5790
SI4464DY-T1-E3 DISTI # 06J7747	Vishay Intertechnologies	N CHANNEL MOSFET,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):195mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes	0	1:$1.4000 10:$1.1500 25:$1.0600 50:$0.9710 100:$0.8820 250:$0.8200 500:$0.7580
SI4464DY-T1-E3 DISTI # 70026108	Vishay Siliconix	MOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.195Ohm,ID 1.7A,SO-8,PD 1.5W,VGS +/-20V RoHS: Compliant	1091	1:$0.9700 25:$0.9300 100:$0.8500 250:$0.8000 500:$0.7300
SI4464DY-T1-E3 DISTI # 781-SI4464DY-T1-E3	Vishay Intertechnologies	MOSFET 200V Vds 20V Vgs SO-8 RoHS: Compliant	1514	1:$1.4000 10:$1.1500 100:$0.8820 500:$0.7580 1000:$0.5990 2500:$0.5590 5000:$0.5310 10000:$0.5190
SI4464DY-T1-E3	Vishay Intertechnologies	RoHS: Compliant	2250Cut Tape/Mini-Reel	1:$0.7300 250:$0.6300 500:$0.6200 750:$0.6150 1500:$0.5950
SI4464DY-T1-E3	Vishay Intertechnologies	Single N-Channel 200 V 0.24 Ohms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant	12500Reel	2500:$0.5350
SI4464DY-T1-E3	Vishay Intertechnologies		2068
SI4464DY-T1-E3	Vishay Intertechnologies	INSTOCK	2910
SI4464DY-T1-E3	Vishay Semiconductors	INSTOCK	2910
SI4464DY-T1-E3 DISTI # XSFP00000063472	Vishay Siliconix	RoHS: Compliant	6680	2500:$1.4600 6680:$1.3300

画像	モデル	説明
	Mfr.#: SI4464DY-T1-E3 OMO.#: OMO-SI4464DY-T1-E3	MOSFET 200V Vds 20V Vgs SO-8
	Mfr.#: SI4464DY-T1-GE3 OMO.#: OMO-SI4464DY-T1-GE3	MOSFET 200V Vds 20V Vgs SO-8
	Mfr.#: SI4464DY-T1-E3-CUT TAPE OMO.#: OMO-SI4464DY-T1-E3-CUT-TAPE-1190	ブランドニューオリジナル
	Mfr.#: SI4464DY-T1 OMO.#: OMO-SI4464DY-T1-1190	ブランドニューオリジナル
	Mfr.#: SI4464DY-T1-E3 OMO.#: OMO-SI4464DY-T1-E3-VISHAY	MOSFET N-CH 200V 1.7A 8-SOIC
	Mfr.#: SI4464DY-T1-GE3 OMO.#: OMO-SI4464DY-T1-GE3-VISHAY	MOSFET N-CH 200V 1.7A 8-SOIC
	Mfr.#: SI4464DY-TI-E3 OMO.#: OMO-SI4464DY-TI-E3-1190	ブランドニューオリジナル

SI4464DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes