SI8425DB-T1-E1

Mfr. #:: SI8425DB-T1-E1
メーカー:: Vishay
説明:: MOSFET P-CH 20V MICROFOOT
ライフサイクル:: メーカー新製品
データシート:: SI8425DB-T1-E1 データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: SI8425DB-T1-E1 詳しくは

製品属性
属性値

メーカー: VISHAY

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

商標名: MICROFOOT TrenchFET

パッケージ-ケース: 4-UFBGA, WLCSP

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 4-WLCSP (1.6x1.6)

構成: 独身

FETタイプ: MOSFET Pチャネル、金属酸化物

パワーマックス: 1.1W

トランジスタタイプ: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

入力-静電容量-Ciss-Vds: 2800pF @ 10V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: -

Rds-On-Max-Id-Vgs: 23 mOhm @ 2A, 4.5V

Vgs-th-Max-Id: 900mV @ 250μA

ゲートチャージ-Qg-Vgs: 110nC @ 10V

Pd-電力損失: 2.7 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 200 ns

立ち上がり時間: 50 ns

Vgs-Gate-Source-Voltage: 10 V

Id-連続-ドレイン-電流: - 9.3 A

Vds-ドレイン-ソース-ブレークダウン-電圧: - 20 V

Vgs-th-Gate-Source-Threshold-Voltage: - 900 mV

Rds-On-Drain-Source-Resistance: 23 mOhms

トランジスタ-極性: Pチャネル

典型的なターンオフ遅延時間: 600 ns

典型的なターンオン遅延時間: 50 ns

Qg-Gate-Charge: 110 nC

フォワード-相互コンダクタンス-最小: 18 S

Tags: SI8425, SI842, SI84, SI8

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8425DB-T1-E1 説明

***ure Electronics: Single P-Channel 20 V 23 mO 36 nC Surface Mount Power Mosfet - MICRO FOOT

***ical: Trans MOSFET P-CH 20V 9.3A 4-Pin Micro Foot T/R

***et: P-CH MICRO FOOT 1.6X1.6 20V 23MOHMS @ 4.5V RATED

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:9.3A; On Resistance Rds(On):0.018Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:900Mv Rohs Compliant: No

SI8425DB-T1-E1 詳しくは

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Market price

モデル	メーカー	説明	ストック	価格
SI8425DB-T1-E1 DISTI # V36:1790_09216595	Vishay Intertechnologies	Trans MOSFET P-CH 20V 9.3A 4-Pin Micro Foot T/R RoHS: Compliant	0
SI8425DB-T1-E1 DISTI # V72:2272_09216595	Vishay Intertechnologies	Trans MOSFET P-CH 20V 9.3A 4-Pin Micro Foot T/R RoHS: Compliant	0
SI8425DB-T1-E1 DISTI # SI8425DB-T1-E1TR-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	15000:$0.2100 6000:$0.2126 3000:$0.2284
SI8425DB-T1-E1 DISTI # SI8425DB-T1-E1CT-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.2596 500:$0.3245 100:$0.4104 10:$0.5350 1:$0.6100
SI8425DB-T1-E1 DISTI # SI8425DB-T1-E1DKR-ND	Vishay Siliconix	MOSFET P-CH 20V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.2596 500:$0.3245 100:$0.4104 10:$0.5350 1:$0.6100
SI8425DB-T1-E1 DISTI # SI8425DB-T1-E1	Vishay Intertechnologies	Trans MOSFET P-CH 20V 9.3A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8425DB-T1-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SI8425DB-T1-E1 DISTI # SI8425DB-T1-E1	Vishay Intertechnologies	Trans MOSFET P-CH 20V 9.3A 4-Pin Micro Foot T/R (Alt: SI8425DB-T1-E1) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI8425DB-T1-E1 DISTI # SI8425DB-T1-E1	Vishay Intertechnologies	Trans MOSFET P-CH 20V 9.3A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8425DB-T1-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1364 18000:$0.1402 12000:$0.1442 6000:$0.1503 3000:$0.1549
SI8425DB-T1-E1 DISTI # 17X0416	Vishay Intertechnologies	P-CHANNEL 20-V (D-S) MOSFET	0	2500:$0.2580 1000:$0.3260 500:$0.3710 250:$0.4320 100:$0.4860 50:$0.5490 25:$0.6030 1:$0.6720
SI8425DB-T1-E1. DISTI # 28AC2183	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:9.3A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.018ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-900mV,Power Dissipation Pd:2.7W,No. of Pins:4PinsRoHS Compliant: No	0	30000:$0.1370 18000:$0.1410 12000:$0.1450 6000:$0.1510 1:$0.1550
SI8425DB-T1-E1 DISTI # 78-SI8425DB-T1-E1	Vishay Intertechnologies	MOSFET -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6 RoHS: Compliant	0	1:$0.5900 10:$0.4780 100:$0.3630 500:$0.3000 1000:$0.2700 3000:$0.2500
SI8425DBT1E1	Vishay Intertechnologies	Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	6000
SI8425DB-T1-E1	Vishay Intertechnologies	MOSFET -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6 RoHS: Compliant	Americas -

画像	モデル	説明
	Mfr.#: SI8425DB-T1-E1 OMO.#: OMO-SI8425DB-T1-E1	MOSFET -20V Vds 10V Vgs MICRO FOOT 1.6 x 1.6
	Mfr.#: SI8425DB-T1-E1 OMO.#: OMO-SI8425DB-T1-E1-VISHAY	MOSFET P-CH 20V MICROFOOT
	Mfr.#: SI8425DY-T1 OMO.#: OMO-SI8425DY-T1-1190	ブランドニューオリジナル
	Mfr.#: SI8425DY-T1-E3 OMO.#: OMO-SI8425DY-T1-E3-1190	ブランドニューオリジナル

SI8425DB-T1-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes