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IPB530N15N3 G

IPB530N15N3 G
Mfr. #:
IPB530N15N3 G
メーカー:
Infineon Technologies
説明:
Darlington Transistors MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3
ライフサイクル:
メーカー新製品
データシート:
IPB530N15N3 G データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
IPB530N15N3 G 詳しくは
製品属性
属性値
メーカー
インフィニオンテクノロジーズ
製品カテゴリ
トランジスタ-FET、MOSFET-シングル
シリーズ
OptiMOS 3
包装
リール
パーツエイリアス
IPB530N15N3GATMA1 IPB530N15N3GXT SP000521718
単位重量
0.056438 oz
取り付けスタイル
SMD / SMT
商標名
OptiMOS
パッケージ-ケース
TO-263-7
テクノロジー
Si
チャネル数
1 Channel
構成
独身
トランジスタタイプ
1 N-Channel
Pd-電力損失
68 W
最高作動温度
+ 175 C
最低作動温度
- 55 C
立ち下がり時間
3 ns
立ち上がり時間
9 ns
Vgs-Gate-Source-Voltage
20 V
Id-連続-ドレイン-電流
21 A
Vds-ドレイン-ソース-ブレークダウン-電圧
150 V
Rds-On-Drain-Source-Resistance
53 mOhms
トランジスタ-極性
Nチャネル
典型的なターンオフ遅延時間
13 ns
典型的なターンオン遅延時間
9 ns
Tags
IPB53, IPB5, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
モデル メーカー 説明 ストック 価格
IPB530N15N3GATMA1
DISTI # V72:2272_06384234		Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		1000
  • 1000:$0.7456
  • 500:$0.8391
  • 250:$0.9170
  • 100:$0.9770
  • 25:$1.1177
  • 10:$1.1472
  • 1:$1.2814
IPB530N15N3GATMA1
DISTI # IPB530N15N3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 150V 21A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    IPB530N15N3GATMA1
    DISTI # IPB530N15N3GATMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 150V 21A TO263-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      IPB530N15N3GATMA1
      DISTI # IPB530N15N3GATMA1TR-ND      		Infineon Technologies AGMOSFET N-CH 150V 21A TO263-3
      RoHS: Compliant
      Min Qty: 1000
      Container: Tape & Reel (TR)      		Temporarily Out of Stock
      • 1000:$0.7966
      IPB530N15N3GATMA1
      DISTI # 27067726      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		2000
      • 1000:$0.6854
      IPB530N15N3GATMA1
      DISTI # 30321591      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) D2PAK T/R
      RoHS: Compliant      		1000
      • 1000:$0.7456
      • 500:$0.8391
      • 250:$0.9170
      • 100:$0.9770
      • 25:$1.1177
      • 11:$1.1472
      IPB530N15N3GATMA1
      DISTI # SP000521718      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263 (Alt: SP000521718)
      RoHS: Compliant
      Min Qty: 1000      		Europe - 2000
      • 1000:€1.0359
      • 2000:€0.8079
      • 4000:€0.7219
      • 6000:€0.6569
      • 10000:€0.6159
      IPB530N15N3GATMA1
      DISTI # IPB530N15N3GATMA1      		Infineon Technologies AGTrans MOSFET N-CH 150V 21A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB530N15N3GATMA1)
      RoHS: Compliant
      Min Qty: 1000
      Container: Reel      		Americas - 0
      • 1000:$0.6949
      • 2000:$0.6699
      • 4000:$0.6459
      • 6000:$0.6239
      • 10000:$0.6129
      IPB530N15N3GATMA1
      DISTI # 34AC1658      		Infineon Technologies AGMOSFET, N-CH, 150V, 21A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:21A,Drain Source Voltage Vds:150V,On Resistance Rds(on):0.044ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power DissipationRoHS Compliant: Yes955
      • 1:$1.6400
      • 10:$1.4100
      • 25:$1.2700
      • 50:$1.1500
      • 100:$0.9680
      • 250:$0.8560
      • 500:$0.7440
      • 1000:$0.7140
      IPB530N15N3 G
      DISTI # 726-IPB530N15N3G      		Infineon Technologies AGMOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3
      RoHS: Compliant      		1862
      • 1:$1.5900
      • 10:$1.3600
      • 100:$1.0400
      • 500:$0.9180
      • 1000:$0.7250
      IPB530N15N3GATMA1Infineon Technologies AGPower Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		64
      • 1000:$0.5700
      • 500:$0.6000
      • 100:$0.6200
      • 25:$0.6500
      • 1:$0.7000
      IPB530N15N3GATMA1
      DISTI # C1S322000615333      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		1000
      • 250:$0.9170
      • 100:$0.9770
      • 25:$1.1177
      • 10:$1.1472
      IPB530N15N3GATMA1
      DISTI # C1S322000525331      		Infineon Technologies AGMOSFETs
      RoHS: Compliant      		2000
      • 2000:$0.7200
      • 1000:$0.7760
      IPB530N15N3GATMA1
      DISTI # XSKDRABS0006506      		Infineon Technologies AG 
      RoHS: Compliant      		1440
      • 1000:$1.0700
      • 1440:$0.9947
      IPB530N15N3GATMA1
      DISTI # 2781071      		Infineon Technologies AGMOSFET, N-CH, 150V, 21A, TO-263
      RoHS: Compliant      		1035
      • 5:£0.7870
      • 25:£0.7710
      • 100:£0.7560
      IPB530N15N3GATMA1
      DISTI # 2781071      		Infineon Technologies AGMOSFET, N-CH, 150V, 21A, TO-263
      RoHS: Compliant      		955
      • 5:$2.2800
      • 25:$1.9800
      • 100:$1.6200
      画像 モデル 説明
      IPB530N15N3 G

      Mfr.#: IPB530N15N3 G

      OMO.#: OMO-IPB530N15N3-G

      		 MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3
      IPB530N15N3GATMA1

      Mfr.#: IPB530N15N3GATMA1

      OMO.#: OMO-IPB530N15N3GATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 150V 21A TO263-3
      IPB530N15N3G

      Mfr.#: IPB530N15N3G

      OMO.#: OMO-IPB530N15N3G-1190

      		 ブランドニューオリジナル
      IPB530N15N3 G

      Mfr.#: IPB530N15N3 G

      OMO.#: OMO-IPB530N15N3-G-124

      		 Darlington Transistors MOSFET N-Ch 150V 21A D2PAK-2 OptiMOS 3
      可用性
      ストック:
      Available
      注文中:
      5000
      数量を入力してください:
      IPB530N15N3 Gの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格（USD）
      量
      単価
      小計金額
      1
      $1.09
      $1.09
      10
      $1.03
      $10.33
      100
      $0.98
      $97.88
      500
      $0.92
      $462.20
      1000
      $0.87
      $870.00
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