SI7102DN-T1-GE3

Mfr. #:: SI7102DN-T1-GE3
メーカー:: Vishay
説明:: MOSFET N-CH 12V 35A 1212-8
ライフサイクル:: メーカー新製品
データシート:: SI7102DN-T1-GE3 データシート
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製品属性
属性値

メーカー: Vishay Siliconix

製品カテゴリ: FET-シングル

シリーズ: TrenchFETR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: SI7102DN-GE3

取り付けスタイル: SMD / SMT

パッケージ-ケース: PowerPAKR 1212-8

テクノロジー: Si

作動温度: -50°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: PowerPAKR 1212-8

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 52W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 12V

入力-静電容量-Ciss-Vds: 3720pF @ 6V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 35A (Tc)

Rds-On-Max-Id-Vgs: 3.8 mOhm @ 15A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

ゲートチャージ-Qg-Vgs: 110nC @ 8V

Pd-電力損失: 3.8 W

最高作動温度: + 150 C

最低作動温度: - 50 C

立ち下がり時間: 12 ns

立ち上がり時間: 125 ns

Vgs-Gate-Source-Voltage: 8 V

Id-連続-ドレイン-電流: 25 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 12 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V

Rds-On-Drain-Source-Resistance: 3.8 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 53 ns

典型的なターンオン遅延時間: 27 ns

Qg-Gate-Charge: 73 nC

チャネルモード: 強化

Tags: SI7102, SI710, SI71, SI7

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7102DN-T1-GE3 説明

***ure Electronics: Single N-Channel 12 V 0.0038 O 110 nC SMT Power Mosfet - PowerPAK-1206-8

***ark: Mosfet, N Channel, 12V, 35A, Powerpak 1212-8, Full Reel; Transistor Polarity:n Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0031Ohm; Transistor Mounting:surface Mount Rohs Compliant: Yes

***nell: MOSFET, N CH, 12V, 35A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.0031ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:52W; Operating Temperature Min:-50°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:-

Market price

モデル	メーカー	説明	ストック	価格
SI7102DN-T1-GE3 DISTI # V72:2272_09215602	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	142	100:$1.0144 25:$1.2147 10:$1.2196 1:$1.3855
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	3000:$0.9059
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2879In Stock	1000:$1.0021 500:$1.2095 100:$1.5550 10:$1.9350 1:$2.1400
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 12V 35A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI7102DN-T1-GE3 DISTI # 29754142	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	3000	3000:$0.9546
SI7102DN-T1-GE3 DISTI # 25789860	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	142	100:$1.0144 25:$1.2147 12:$1.2196
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R (Alt: SI7102DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI7102DN-T1-GE3 DISTI # SI7102DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R (Alt: SI7102DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€1.5179 6000:€1.0639 12000:€0.8769 18000:€0.7789 30000:€0.7369
SI7102DN-T1-GE3 DISTI # 05W6953	Vishay Intertechnologies	MOSFET, N CHANNEL, 12V, 35A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:35A,Drain Source Voltage Vds:12V,On Resistance Rds(on):3.1mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:400mV , RoHS Compliant: Yes	0	1:$1.9000 25:$1.5800 50:$1.4000 100:$1.2200 250:$1.1500 500:$1.0700 1000:$1.0200
SI7102DN-T1-GE3. DISTI # 28AC2159	Vishay Intertechnologies	N-CHANNEL 12-V (D-S) MOSFET , ROHS COMPLIANT: YES	0
SI7102DN-T1-GE3 DISTI # 781-SI7102DN-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK 1212-8 RoHS: Compliant	2110	1:$1.9000 10:$1.5800 100:$1.2200 500:$1.0700 1000:$1.0200
SI7102DN-T1-GE3	Vishay Intertechnologies	MOSFET 12V Vds 8V Vgs PowerPAK 1212-8 RoHS: Compliant	Americas - 18000
SI7102DN-T1-GE3 DISTI # 2335346	Vishay Intertechnologies	MOSFET, N CH, 12V, 35A, POWERPAK 1212 RoHS: Compliant	287	1:$3.0100 10:$2.5000 100:$1.9400 500:$1.7000 1000:$1.6200 3000:$1.6200
SI7102DN-T1-GE3 DISTI # 2335346	Vishay Intertechnologies	MOSFET, N CH, 12V, 35A, POWERPAK 1212 RoHS: Compliant	297	5:£1.2900 25:£1.1800 100:£0.9090 250:£0.8530 500:£0.7970
SI7102DN-T1-GE3 DISTI # C1S803601025928	Vishay Intertechnologies	Trans MOSFET N-CH 12V 25A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	142	100:$1.0144 25:$1.2147 10:$1.2196

画像	モデル	説明
	Mfr.#: SI7102DN-T1-E3 OMO.#: OMO-SI7102DN-T1-E3	MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3
	Mfr.#: SI7102DN-T1-GE3 OMO.#: OMO-SI7102DN-T1-GE3	MOSFET RECOMMENDED ALT 78-SISH410DN-T1-GE3
	Mfr.#: SI7102DN OMO.#: OMO-SI7102DN-1190	ブランドニューオリジナル
	Mfr.#: SI7102DN-T1-E3 OMO.#: OMO-SI7102DN-T1-E3-VISHAY	MOSFET N-CH 12V 35A PPAK 1212-8
	Mfr.#: SI7102DN-T1-GE3 OMO.#: OMO-SI7102DN-T1-GE3-VISHAY	MOSFET N-CH 12V 35A 1212-8
	Mfr.#: SI7102DNTE1GE3 OMO.#: OMO-SI7102DNTE1GE3-1190	ブランドニューオリジナル

SI7102DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes