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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| RFD8P05SM96 | HARTING Technology Group | RoHS: Not Compliant | 750 |
| 画像 | モデル | 説明 |
|---|---|---|
|
Mfr.#: RFD8P05 OMO.#: OMO-RFD8P05 |
MOSFET TO-251AA P-Ch Power |
|
Mfr.#: RFD8P03L OMO.#: OMO-RFD8P03L-1190 |
ブランドニューオリジナル |
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Mfr.#: RFD8P05 OMO.#: OMO-RFD8P05-ON-SEMICONDUCTOR |
MOSFET P-CH 50V 8A I-PAK |
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Mfr.#: RFD8P05SM (TO-251) OMO.#: OMO-RFD8P05SM-TO-251--1190 |
ブランドニューオリジナル |
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Mfr.#: RFD8P05SM9A OMO.#: OMO-RFD8P05SM9A-1190 |
Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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Mfr.#: RFD8P06 OMO.#: OMO-RFD8P06-1190 |
ブランドニューオリジナル |
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Mfr.#: RFD8P06ESM9A OMO.#: OMO-RFD8P06ESM9A-1190 |
(Alt: RFD8P06ESM9A) |
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Mfr.#: RFD8P06LE OMO.#: OMO-RFD8P06LE-1190 |
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
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Mfr.#: RFD8P06LESM OMO.#: OMO-RFD8P06LESM-1190 |
8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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Mfr.#: RFD8P06LESM9A OMO.#: OMO-RFD8P06LESM9A-1190 |
- Bulk (Alt: RFD8P06LESM9A) |