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BSC105N10LSFGATMA1

BSC105N10LSFGATMA1
Mfr. #:
BSC105N10LSFGATMA1
メーカー:
Infineon Technologies
説明:
MOSFET MV POWER MOS
ライフサイクル:
メーカー新製品
データシート:
BSC105N10LSFGATMA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー：
インフィニオン
製品カテゴリ：
MOSFET
テクノロジー：
Si
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
TDSON-8
商標名：
OptiMOS
包装：
リール
高さ：
1.27 mm
長さ：
5.9 mm
幅：
5.15 mm
ブランド：
インフィニオンテクノロジーズ
製品タイプ：
MOSFET
サブカテゴリ：
MOSFET
パーツ番号エイリアス：
BSC105N10LSF BSC15N1LSFGXT G SP000388502
Tags
BSC105N10LSF, BSC105, BSC10, BSC1, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 100 V 10.5 mOhm 40 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
N-Channel PowerTrench® MOSFET, Dual CoolTM 56, 100V, 60A, 7.5mΩ
***ark
TAPE REEL/PT5 100V/20V Nch Dual Cool PowerTrench MOSFET.
***nell
MOSFET, N-CH, 100V, 60A, DUAL COOL 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
***roFlash
Power Field-Effect Transistor, 14.5A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***el Electronic
Embedded - Microcontrollers 3 (168 Hours) 48-WFQFN Exposed Pad 34 32K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit IC MCU 16BIT 512KB FLASH 48HWQFN
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process thatincorporates Shielded Gate technology. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
***ure Electronics
Single N-Channel 100 V 7.9 mOhm 66 nC OptiMOS™ Power Mosfet - TDSON-8
***ical
Trans MOSFET N-CH 100V 13.4A Automotive 8-Pin TDSON EP T/R
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 100A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.6mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:100A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***ure Electronics
Single N-Channel 100 V 10 mOhm 44 nC OptiMOS™ Power Mosfet - TDSON-8
***ow.cn
BSC100N10NSFGATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R - Arrow.com
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
N-Channel PowerTrench® MOSFET 100V, 60A, 8mΩ
***ure Electronics
FDMS86101 Series 100 V 60 A 8 mOhm N-Channel PowerTrench® MOSFET - POWER-56
***roFlash
Power Field-Effect Transistor, 12.4A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***ment14 APAC
MOSFET,N CH,100V,12.4A,POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0084ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011)
***ure Electronics
Single N-Channel 100 V 12.3 mOhm 51 nC OptiMOS™ Power Mosfet - TDSON-8
***roFlash
Power Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ineon SCT
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS
***ment14 APAC
MOSFET, N CH, 71A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.85V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:114W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon
The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)
***emi
N-Channel Shielded Gate PowerTrench® MOSFET 80V, 60A, 7.65mΩ
***ure Electronics
N-Channel 80 V 7.65 mO 55 nC SMT PowerTrench® Mosfet - PQFN-8
***r Electronics
Power Field-Effect Transistor, 13A I(D), 80V, 0.00765ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
***nell
MOSFET, N CH, 80V, 60A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
モデル メーカー 説明 ストック 価格
BSC105N10LSFGATMA1
DISTI # 32637758		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		5000
  • 5000:$1.6799
BSC105N10LSFGATMA1
DISTI # BSC105N10LSFGATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1933In Stock
  • 1000:$1.6968
  • 500:$2.0120
  • 100:$2.3635
  • 10:$2.8850
  • 1:$3.2100
BSC105N10LSFGATMA1
DISTI # BSC105N10LSFGATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1933In Stock
  • 1000:$1.6968
  • 500:$2.0120
  • 100:$2.3635
  • 10:$2.8850
  • 1:$3.2100
BSC105N10LSFGATMA1
DISTI # BSC105N10LSFGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 90A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 5000:$1.5062
BSC105N10LSFGATMA1
DISTI # V36:1790_06378314		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R
RoHS: Compliant		0
  • 5000000:$1.3050
  • 2500000:$1.3070
  • 500000:$1.3810
  • 50000:$1.4890
  • 5000:$1.5060
BSC105N10LSFGATMA1
DISTI # BSC105N10LSFGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R - Bulk (Alt: BSC105N10LSFGATMA1)
RoHS: Compliant
Min Qty: 250
Container: Bulk		Americas - 0
  • 1250:$1.1900
  • 2500:$1.1900
  • 500:$1.2900
  • 750:$1.2900
  • 250:$1.3900
BSC105N10LSFGATMA1
DISTI # BSC105N10LSFGATMA1		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC105N10LSFGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 30000:$1.3900
  • 50000:$1.3900
  • 10000:$1.4900
  • 20000:$1.4900
  • 5000:$1.5900
BSC105N10LSFGATMA1
DISTI # SP000388502		Infineon Technologies AGTrans MOSFET N-CH 100V 11.4A 8-Pin TDSON T/R (Alt: SP000388502)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€1.1900
  • 30000:€1.2900
  • 20000:€1.3900
  • 10000:€1.4900
  • 5000:€1.7900
BSC105N10LSF G
DISTI # 726-BSC105N10LSFG		Infineon Technologies AGMOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
RoHS: Compliant		1905
  • 1:$2.9600
  • 10:$2.5200
  • 100:$2.1800
  • 250:$2.0700
  • 500:$1.8600
BSC105N10LSFGATMA1Infineon Technologies AGPower Field-Effect Transistor, 11.4A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
RoHS: Compliant		1037
  • 1000:$1.3200
  • 500:$1.3900
  • 100:$1.4400
  • 25:$1.5000
  • 1:$1.6200
画像 モデル 説明
BSC105N10LSF G

Mfr.#: BSC105N10LSF G

OMO.#: OMO-BSC105N10LSF-G

 MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
BSC105N10LSFGATMA1

Mfr.#: BSC105N10LSFGATMA1

OMO.#: OMO-BSC105N10LSFGATMA1

 MOSFET MV POWER MOS
BSC105N10LS

Mfr.#: BSC105N10LS

OMO.#: OMO-BSC105N10LS-1190

 ブランドニューオリジナル
BSC105N10LSFG

Mfr.#: BSC105N10LSFG

OMO.#: OMO-BSC105N10LSFG-1190

 ブランドニューオリジナル
BSC105N10LSFGXT

Mfr.#: BSC105N10LSFGXT

OMO.#: OMO-BSC105N10LSFGXT-1190

 ブランドニューオリジナル
BSC105N10LSFGATMA1-CUT TAPE

Mfr.#: BSC105N10LSFGATMA1-CUT TAPE

OMO.#: OMO-BSC105N10LSFGATMA1-CUT-TAPE-1190

 ブランドニューオリジナル
BSC105N10LSFGATMA1

Mfr.#: BSC105N10LSFGATMA1

OMO.#: OMO-BSC105N10LSFGATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 100V 90A TDSON-8
BSC105N10LSF G

Mfr.#: BSC105N10LSF G

OMO.#: OMO-BSC105N10LSF-G-128

 MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2
可用性
ストック:
Available
注文中:
4500
数量を入力してください:
BSC105N10LSFGATMA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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