IPI60R385CP

Mfr. #:: IPI60R385CP
メーカー:: Rochester Electronics, LLC
説明:: Darlington Transistors MOSFET N-Ch 650V 9A I2PAK-3 CoolMOS CP
ライフサイクル:: メーカー新製品
データシート:: IPI60R385CP データシート
配達:: DHL FedEx Ups TNT EMS
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ECAD Model:

製品属性
属性値

メーカー: インフィニオンテクノロジーズ

製品カテゴリ: トランジスタ-FET、MOSFET-シングル

シリーズ: CoolMOS CP

包装: チューブ

パーツエイリアス: IPI60R385CPXK IPI60R385CPXKSA1 SP000103250

単位重量: 0.084199 oz

取り付けスタイル: スルーホール

商標名: CoolMOS

パッケージ-ケース: I2PAK-3

テクノロジー: Si

チャネル数: 1 Channel

構成: 独身

トランジスタタイプ: 1 N-Channel

Pd-電力損失: 83 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 5 ns

立ち上がり時間: 5 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 9 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 650 V

Rds-On-Drain-Source-Resistance: 385 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 40 ns

典型的なターンオン遅延時間: 10 ns

チャネルモード: 強化

Tags: IPI60R3, IPI60R, IPI60, IPI6, IPI

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPI60R385CP 説明

***ure Electronics: N-Channel 650 V 0.385 Ohm CoolMOSTM Power Transistor - PG-TO262

***ineon: CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power

***ark: MOSFET, N, TO-262; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Typ Voltage Vds:650V; Current, Id Cont:9A; On State Resistance:0.385ohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:3V; Case Style:TO-262; ;RoHS Compliant: Yes

***nell: MOSFET, N, TO-262; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-262; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Current Id Max: 9A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 650V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Market price

モデル	メーカー	説明	ストック	価格
IPI60R385CPXKSA1 DISTI # IPI60R385CPXKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V 9A I2PAK RoHS: Compliant Min Qty: 500 Container: Tube	Limited Supply - Call
IPI60R385CP DISTI # 726-IPI60R385CP	Infineon Technologies AG	MOSFET N-Ch 650V 9A I2PAK-3 CoolMOS CP RoHS: Compliant	426	1:$2.3400 10:$1.9900 100:$1.5900 500:$1.3900
IPI60R385CPXKSA1 DISTI # N/A	Infineon Technologies AG	MOSFET LOW POWER_LEGACY	0
IPI60R385CPXKSA1	Infineon Technologies AG	Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Compliant	16041	1000:$0.9600 500:$1.0100 100:$1.0500 25:$1.1000 1:$1.1800
IPI60R385CPXKSA1 DISTI # IPI60R385CPXKSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,600V,9A,83W,PG-TO262-3	495	1:$2.3398 3:$2.0130 10:$1.6140 100:$1.3981

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