IPI60R3

IPI60R380C6 vs IPI60R380C6XKSA1 vs IPI60R385CPXKSA1

 
PartNumberIPI60R380C6IPI60R380C6XKSA1IPI60R385CPXKSA1
DescriptionMOSFET N-Ch 650V 10.6A I2PAK-3 CoolMOS C6MOSFET LOW POWER_LEGACYMOSFET LOW POWER_LEGACY
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSY--
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-262-3TO-262-3TO-262-3
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage650 V--
Id Continuous Drain Current10.6 A--
Rds On Drain Source Resistance380 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge32 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation83 W--
ConfigurationSingle--
TradenameCoolMOSCoolMOSCoolMOS
PackagingTubeTubeTube
Height9.45 mm9.45 mm9.45 mm
Length10.2 mm10.2 mm10.2 mm
SeriesCoolMOS C6--
Transistor Type1 N-Channel--
Width4.5 mm4.5 mm4.5 mm
BrandInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Fall Time9 nS--
Product TypeMOSFETMOSFETMOSFET
Rise Time10 ns--
Factory Pack Quantity500--
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time110 nS--
Part # AliasesIPI60R380C6XKSA1 IPI6R38C6XK SP000660630IPI60R380C6 IPI6R38C6XK SP000660630IPI60R385CPXKSA1 SP000103250
Unit Weight0.084199 oz0.084199 oz0.084199 oz
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
IPI60R380C6 MOSFET N-Ch 650V 10.6A I2PAK-3 CoolMOS C6
IPI60R380C6XKSA1 MOSFET N-CH 600V 10.6A TO262
IPI60R385CPXKSA1 MOSFET N-CH 650V 9A I2PAK
Infineon Technologies
Infineon Technologies
IPI60R380C6XKSA1 MOSFET LOW POWER_LEGACY
IPI60R385CPXKSA1 MOSFET LOW POWER_LEGACY
IPI60R380C6 Trans MOSFET N-CH 600V 10.6A 3-Pin TO-262 Tube - Bulk (Alt: IPI60R380C6)
IPI60R385CP Darlington Transistors MOSFET N-Ch 650V 9A I2PAK-3 CoolMOS CP
Top