RGTH50TS65DGC11

RGTH50TS65DGC11
Mfr. #:
RGTH50TS65DGC11
メーカー:
Rohm Semiconductor
説明:
IGBT Transistors 650V 25A IGBT Stop Trench
ライフサイクル:
メーカー新製品
データシート:
RGTH50TS65DGC11 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
RGTH50TS65DGC11 詳しくは
製品属性
属性値
メーカー:
ロームセミコンダクター
製品カテゴリ:
IGBTトランジスタ
JBoss:
Y
テクノロジー:
Si
パッケージ/ケース:
TO-247-3
取り付けスタイル:
スルーホール
コレクター-エミッター電圧VCEOMax:
650 V
コレクター-エミッター飽和電圧:
1.6 V
最大ゲートエミッタ電圧:
30 V
25℃での連続コレクタ電流:
50 A
Pd-消費電力:
174 W
最低動作温度:
- 40 C
最高作動温度:
+ 175 C
シリーズ:
RGTH50TS65
包装:
チューブ
連続コレクタ電流IcMax:
50 A
動作温度範囲:
- 40 C to + 175 C
ブランド:
ロームセミコンダクター
連続コレクタ電流:
25 A
ゲートエミッタリーク電流:
+/- 200 nA
製品タイプ:
IGBTトランジスタ
ファクトリーパックの数量:
450
サブカテゴリ:
IGBT
パーツ番号エイリアス:
RGTH50TS65D
単位重量:
1.340411 oz
Tags
RGTH50TS, RGTH5, RGTH, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans IGBT Chip N-CH 650V 50A 3-Pin TO-247N Tube
***ark
Igbt, Single, 650V, 50A, To-247N-3 Rohs Compliant: Yes
***nell
IGBT, SINGLE, 650V, 50A, TO-247N-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 174W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247N; No. of P
***i-Key
IGBT TRNCH FIELD 650V 50A TO247N
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
***ark
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
650V, 30A Field Stop Trench IGBT
*** Electronic Components
IGBT Transistors FS1TIGBT TO247 30A 650V
***rchild Semiconductor
Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performancefor solar inverter , UPS and digital power generator where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***-Wing Technology
Tube Through Hole ROHS3Compliant IGBT Transistor 2V @ 15V 24A 60A 250W 170ns
***nell
IGBT, SINGLE, N-CH, 650V, 60A, TO-247AC; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247AC; No
***ineon
Benefits: Low VCE(ON) and Switching Losses; 5.5s Short Circuit SOA; Square RBSOA; Maximum Junction Temperature 175C; Positive VCE(ON) Temperature Coefficient; Lead-Free, RoHs compliant
***ical
Trans IGBT Chip N-CH 650V 40A 168000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247, Tube
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***ark
IGBT, SINGLE, 650V, 60A, TO-247AC
***ineon
Target Applications: Pump; Solar; UPS; Welding
***ment14 APAC
TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AC
***or
IGBT W/ULTRAFAST SOFT RECOVERY D
***S
French Electronic Distributor since 1988
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
モデル メーカー 説明 ストック 価格
RGTH50TS65DGC11
DISTI # RGTH50TS65DGC11-ND
ROHM SemiconductorIGBT 650V 50A 174W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube
430In Stock
  • 2520:$1.6660
  • 510:$1.9754
  • 120:$2.3205
  • 30:$2.6777
  • 10:$2.8320
  • 1:$3.1500
RGTH50TS65DGC11
DISTI # RGTH50TS65DGC11
ROHM SemiconductorTrans IGBT Chip N-CH 650V 50A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH50TS65DGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 2700:$1.4900
  • 4500:$1.4900
  • 1800:$1.5900
  • 900:$1.6900
  • 450:$1.7900
RGTH50TS65DGC11
DISTI # 755-RGTH50TS65DGC11
ROHM SemiconductorIGBT Transistors 650V 25A IGBT Stop Trench
RoHS: Compliant
429
  • 1:$3.1500
  • 10:$2.6800
  • 100:$2.3300
  • 250:$2.2100
  • 500:$1.9800
  • 1000:$1.6700
  • 2500:$1.5900
  • 5000:$1.5300
RGTH50TS65DGC11
DISTI # 1501516
ROHM SemiconductorIGBT N-CHANNEL 50A 650V TRENCH TO-247, PK10
  • 500:£1.6740
  • 250:£1.7740
  • 100:£1.8960
  • 25:£2.1680
  • 5:£2.4620
RGTH50TS65DGC11ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***16
  • 7:$3.8280
  • 3:$4.3500
  • 1:$5.2200
RGTH50TS65DGC11
DISTI # 2519794
ROHM SemiconductorIGBT, SINGLE, 650V, 50A, TO-247N-3
RoHS: Compliant
0
  • 270:$3.3400
  • 120:$3.5200
  • 30:$4.0600
  • 10:$4.3000
  • 1:$4.7800
RGTH50TS65DGC11
DISTI # 2519794
ROHM SemiconductorIGBT, SINGLE, 650V, 50A, TO-247N-30
  • 500:£1.2200
  • 250:£1.3700
  • 100:£1.4300
  • 10:£1.6600
  • 1:£2.1900
RGTH50TS65DGC11ROHM SemiconductorIGBT Transistors 650V 25A IGBT Stop Trench
RoHS: Compliant
Americas -
    RGTH50TS65DGC11ROHM SemiconductorRoHS(ship within 1day)20
    • 1:$3.4300
    • 10:$2.5700
    • 50:$2.2600
    • 100:$1.9300
    • 500:$1.8000
    • 1000:$1.7400
    画像 モデル 説明
    RGTH50TK65GC11

    Mfr.#: RGTH50TK65GC11

    OMO.#: OMO-RGTH50TK65GC11

    IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    RGTH50TK65DGC11

    Mfr.#: RGTH50TK65DGC11

    OMO.#: OMO-RGTH50TK65DGC11

    IGBT Transistors IGBT HIGH VOLT AND CURRENT AP
    RGTH50TS65DGC11

    Mfr.#: RGTH50TS65DGC11

    OMO.#: OMO-RGTH50TS65DGC11

    IGBT Transistors 650V 25A IGBT Stop Trench
    RGTH50TS65GC11

    Mfr.#: RGTH50TS65GC11

    OMO.#: OMO-RGTH50TS65GC11

    IGBT Transistors 650V 25A IGBT Stop Trench
    RGTH50TS65DGC11

    Mfr.#: RGTH50TS65DGC11

    OMO.#: OMO-RGTH50TS65DGC11-ROHM-SEMI

    IGBT Transistors 650V 25A Field Stop Trench IGBT
    RGTH50TS65GC11

    Mfr.#: RGTH50TS65GC11

    OMO.#: OMO-RGTH50TS65GC11-ROHM-SEMI

    IGBT Transistors 650V 25A Field Stop Trench IGBT
    RGTH50TK65

    Mfr.#: RGTH50TK65

    OMO.#: OMO-RGTH50TK65-1190

    ブランドニューオリジナル
    RGTH50TS65D

    Mfr.#: RGTH50TS65D

    OMO.#: OMO-RGTH50TS65D-1190

    ブランドニューオリジナル
    可用性
    ストック:
    429
    注文中:
    2412
    数量を入力してください:
    RGTH50TS65DGC11の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格(USD)
    単価
    小計金額
    1
    $3.15
    $3.15
    10
    $2.68
    $26.80
    100
    $2.33
    $233.00
    250
    $2.21
    $552.50
    500
    $1.98
    $990.00
    1000
    $1.67
    $1 670.00
    2500
    $1.59
    $3 975.00
    5000
    $1.53
    $7 650.00
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