CGH40035F

Mfr. #:: CGH40035F
メーカー:: N/A
説明:: RF JFET Transistors DC-6GHz 28V 35W Gain 14dB GaN HEMT
ライフサイクル:: メーカー新製品
データシート:: CGH40035F データシート
配達:: DHL FedEx Ups TNT EMS
支払い:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:: CGH40035F 詳しくは

製品属性
属性値

メーカー: クリー

製品カテゴリ: ICチップ

包装: トレイ

取り付けスタイル: スクリュー

動作-温度-範囲: -

パッケージ-ケース: 440193

テクノロジー: GaN SiC

構成: 独身

トランジスタタイプ: HEMT

利得: 15 dB

クラス: -

出力電力: 45 W

Pd-電力損失: -

最高作動温度: + 150 C

最低作動温度: - 40 C

応用: -

動作周波数: 2 GHz to 4 GHz

Id-連続-ドレイン-電流: 4.5 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 120 V

Vgs-th-Gate-Source-Threshold-Voltage: - 3 V

Rds-On-Drain-Source-Resistance: -

トランジスタ-極性: Nチャネル

フォワード-相互コンダクタンス-最小: -

開発キット: CGH40035F-TB

Vgs-ゲート-ソース-ブレークダウン-電圧: - 10 V to + 2 V

ゲート-ソース-カットオフ-電圧: -

最大ドレインゲート電圧: -

NF-雑音指数: -

P1dB-圧縮ポイント: -

Tags: CGH40035, CGH4003, CGH400, CGH40, CGH4, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGH40035F 説明

***o-Tech: - 35W, RF Power GaN HEMT Flange Package

***i-Key: RF MOSFET HEMT 28V 440193

***hardson RFPD: RF POWER TRANSISTOR

CGH40035F 詳しくは

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Market price

モデル	メーカー	説明	ストック	価格
CGH40035F DISTI # CGH40035F-ND	Wolfspeed	RF MOSFET HEMT 28V 440193 RoHS: Compliant Min Qty: 1 Container: Tray	586In Stock	1:$164.3400
CGH40035F-TB DISTI # CGH40035F-TB-ND	Wolfspeed	BOARD DEMO AMP CIRCUIT CGH40035 RoHS: Compliant Min Qty: 2 Container: Bulk	Temporarily Out of Stock	2:$550.0000
CGH40035F DISTI # 941-CGH40035F	Cree, Inc.	RF JFET Transistors GaN HEMT DC-4.0GHz, 35 Watt RoHS: Compliant	120	1:$164.3400
CGH40035F-TB DISTI # 941-CGH40035F-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Not compliant	1	1:$550.0000
CGH40035F	Cree, Inc.		20
CGH40035F DISTI # CGH40035F	Wolfspeed	RF POWER TRANSISTOR RoHS: Compliant	120	1:$164.3400
CGH40035F-TB DISTI # CGH40035F-TB	Wolfspeed	RF TRANSISTOR TEST FIXTURE RoHS: Compliant	2	2:$550.0000

関連製品

画像	モデル	説明
	Mfr.#: CGH40120F OMO.#: OMO-CGH40120F	RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt
	Mfr.#: CGH40035F-TB OMO.#: OMO-CGH40035F-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: CGH40025F/P OMO.#: OMO-CGH40025F-P-1190	ブランドニューオリジナル
	Mfr.#: CGH40035F/P OMO.#: OMO-CGH40035F-P-1190	ブランドニューオリジナル
	Mfr.#: CGH40090 OMO.#: OMO-CGH40090-1190	ブランドニューオリジナル
	Mfr.#: CGH40180PP-TB OMO.#: OMO-CGH40180PP-TB-WOLFSPEED	BOARD DEMO AMP CIRCUIT CGH40180
	Mfr.#: CGH40006S OMO.#: OMO-CGH40006S-WOLFSPEED	RF JFET Transistors DC-6GHz 28V 6W Gain 11.8dB GaN HEMT
	Mfr.#: CGH40120F OMO.#: OMO-CGH40120F-WOLFSPEED	RF JFET Transistors DC-2.5GHz 28V 120W Gain 19dB GaN HEMT
	Mfr.#: CGH40006P OMO.#: OMO-CGH40006P-WOLFSPEED	RF JFET Transistors DC-6GHz 28V 6W Gain 13dB GaN HEMT
	Mfr.#: CGH492T350W5L OMO.#: OMO-CGH492T350W5L-CORNELL-DUBILIER-ELECTRONICS	Aluminum Electrolytic Capacitors - Screw Terminal 4900uF 350V-10+50%