CSD13201W10

Mfr. #:: CSD13201W10
説明:: Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
ライフサイクル:: メーカー新製品
データシート:: CSD13201W10 データシート
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詳しくは:: CSD13201W10 詳しくは CSD13201W10 Product Details

製品属性
属性値

メーカー: テキサスインスツルメンツ

製品カテゴリ: FET-シングル

シリーズ: NexFET

包装: Digi-ReelR代替パッケージ

取り付けスタイル: SMD / SMT

商標名: NexFET

パッケージ-ケース: 4-UFBGA, DSBGA

テクノロジー: Si

作動温度: -55°C ~ 150°C (TJ)

取付タイプ: 表面実装

チャネル数: 1 Channel

サプライヤー-デバイス-パッケージ: 4-DSBGA (1x1)

構成: 独身

FETタイプ: MOSFET Nチャネル、金属酸化物

パワーマックス: 1.2W

トランジスタタイプ: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 12V

入力-静電容量-Ciss-Vds: 462pF @ 6V

FET機能: 標準

Current-Continuous-Drain-Id-25°C: 1.6A (Ta)

Rds-On-Max-Id-Vgs: 34 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 1.1V @ 250μA

ゲートチャージ-Qg-Vgs: 2.9nC @ 4.5V

Pd-電力損失: 1.2 W

最高作動温度: + 150 C

最低作動温度: - 55 C

立ち下がり時間: 9.7 ns

立ち上がり時間: 5.9 ns

Vgs-Gate-Source-Voltage: 8 V

Id-連続-ドレイン-電流: 1.6 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 12 V

Vgs-th-Gate-Source-Threshold-Voltage: 800 mV

Rds-On-Drain-Source-Resistance: 34 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 14.4 ns

典型的なターンオン遅延時間: 3.9 ns

Qg-Gate-Charge: 2.3 nC

フォワード-相互コンダクタンス-最小: 23 S

チャネルモード: 強化

Tags: CSD132, CSD13, CSD1, CSD

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD13201W10 説明

***as Instruments: 12V, N ch NexFET MOSFET™, single WLP 1.0x1.0, 34mOhm 4-DSBGA -55 to 150

***p One Stop Global: Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R

***i-Key: MOSFET N-CH 12V 1.6A 4DSBGA

***ark: 12V N Ch Mosfet

CSD13201W10 詳しくは

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

モデル	説明	ストック	価格
CSD13201W10 DISTI # V72:2272_07248711	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R RoHS: Compliant	234	100:$0.1918 25:$0.3164 10:$0.3515 1:$0.4655
CSD13201W10 DISTI # 296-41412-1-ND	MOSFET N-CH 12V 1.6A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	189531In Stock	1000:$0.1713 500:$0.2284 100:$0.3331 10:$0.4850 1:$0.6200
CSD13201W10 DISTI # 296-41412-6-ND	MOSFET N-CH 12V 1.6A 4DSBGA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	189531In Stock	1000:$0.1713 500:$0.2284 100:$0.3331 10:$0.4850 1:$0.6200
CSD13201W10 DISTI # 296-41412-2-ND	MOSFET N-CH 12V 1.6A 4DSBGA RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	186000In Stock	15000:$0.1340 6000:$0.1432 3000:$0.1525
CSD13201W10 DISTI # 25768664	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R RoHS: Compliant	234	100:$0.1918 60:$0.3164
CSD13201W10 DISTI # CSD13201W10	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R - Tape and Reel (Alt: CSD13201W10) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1269 6000:$0.1219 12000:$0.1179 18000:$0.1129 30000:$0.1079
CSD13201W10 DISTI # CSD13201W10	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R (Alt: CSD13201W10) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
CSD13201W10	N-Channel NexFET&#153,Power MOSFET	5765	1000:$0.1000 750:$0.1100 500:$0.1300 250:$0.1600 100:$0.1800 25:$0.2100 10:$0.2200 1:$0.2500
CSD13201W10 DISTI # 595-CSD13201W10	MOSFET N-CH NexFET Pwr MOSFET RoHS: Compliant	33222	1:$0.4900 10:$0.3700 100:$0.2020 1000:$0.1520 3000:$0.1310 9000:$0.1220 24000:$0.1120
CSD13201W10 DISTI # C1S746203525749	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R RoHS: Compliant	234	100:$0.1918 25:$0.3164

画像	モデル	説明
	Mfr.#: CSD13381F4 OMO.#: OMO-CSD13381F4	MOSFET 12V N-CH Pwr MOSFET
	Mfr.#: CSD13306WT OMO.#: OMO-CSD13306WT	MOSFET 12V N-Channel NexFET Power MOSFET
	Mfr.#: CSD13202Q2 OMO.#: OMO-CSD13202Q2	MOSFET N-CH Power MOSFET 12V 9.3mohm
	Mfr.#: CSD13383F4T OMO.#: OMO-CSD13383F4T	MOSFET 12V N-Channel FemtoFET MOSFET
	Mfr.#: CSD13385F5 OMO.#: OMO-CSD13385F5	MOSFET 12V, N ch NexFET MOSFETG , single LGA 0.8x1.5, 19mOhm 3-PICOSTAR -55 to 150
	Mfr.#: CSD13202Q2/TI OMO.#: OMO-CSD13202Q2-TI-TEXAS-INSTRUMENTS	ブランドニューオリジナル
	Mfr.#: CSD13381F4T OMO.#: OMO-CSD13381F4T-TEXAS-INSTRUMENTS	IGBT Transistors MOSFET 12V,N-Ch FemtoFET MOSFET
	Mfr.#: CSD13302W OMO.#: OMO-CSD13302W-TEXAS-INSTRUMENTS	Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
	Mfr.#: CSD13381F4 OMO.#: OMO-CSD13381F4-TEXAS-INSTRUMENTS	MOSFET N-CH 12V 2.1A 3PICOSTAR
	Mfr.#: CSD13383F4 OMO.#: OMO-CSD13383F4-TEXAS-INSTRUMENTS	MOSFET N-CH 12V 3PICOSTAR

CSD13201W10

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes