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SI4943CDY-T1-E3

SI4943CDY-T1-E3
Mfr. #:
SI4943CDY-T1-E3
メーカー:
Vishay
説明:
RF Bipolar Transistors MOSFET 20V 8.0A 3.1W 19.2mohm @ 10V
ライフサイクル:
メーカー新製品
データシート:
SI4943CDY-T1-E3 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
SI4943CDY-T1-E3 詳しくは
製品属性
属性値
メーカー
Vishay Siliconix
製品カテゴリ
FET-アレイ
シリーズ
TrenchFETR
包装
テープ＆リール（TR）
パッケージ-ケース
8-SOIC (0.154", 3.90mm Width)
作動温度
-50°C ~ 150°C (TJ)
取付タイプ
表面実装
サプライヤー-デバイス-パッケージ
8-SO
FETタイプ
2 P-Channel (Dual)
パワーマックス
3.1W
Drain-to-Source-Voltage-Vdss
20V
入力-静電容量-Ciss-Vds
1945pF @ 10V
FET機能
ロジックレベルゲート
Current-Continuous-Drain-Id-25°C
8A
Rds-On-Max-Id-Vgs
19.2 mOhm @ 8.3A, 10V
Vgs-th-Max-Id
3V @ 250μA
ゲートチャージ-Qg-Vgs
62nC @ 10V
Tags
SI4943C, SI4943, SI494, SI49, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
モデル メーカー 説明 ストック 価格
SI4943CDY-T1-E3
DISTI # SI4943CDY-T1-E3CT-ND		Vishay SiliconixMOSFET 2P-CH 20V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1917In Stock
  • 1000:$0.9036
  • 500:$1.0905
  • 100:$1.4021
  • 10:$1.7450
  • 1:$1.9300
SI4943CDY-T1-E3
DISTI # SI4943CDY-T1-E3DKR-ND		Vishay SiliconixMOSFET 2P-CH 20V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1917In Stock
  • 1000:$0.9036
  • 500:$1.0905
  • 100:$1.4021
  • 10:$1.7450
  • 1:$1.9300
SI4943CDY-T1-E3
DISTI # SI4943CDY-T1-E3TR-ND		Vishay SiliconixMOSFET 2P-CH 20V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.8167
SI4943CDY-T1-E3
DISTI # SI4943CDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4943CDY-T1-E3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$0.7999
  • 5000:$0.7759
  • 10000:$0.7449
  • 15000:$0.7239
  • 25000:$0.7049
SI4943CDY-T1-E3
DISTI # SI4943CDY-T1-E3		Vishay IntertechnologiesTrans MOSFET P-CH 20V 8A 8-Pin SOIC N T/R (Alt: SI4943CDY-T1-E3)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
    SI4943CDY-T1-E3
    DISTI # 781-SI4943CDY-E3    		Vishay IntertechnologiesMOSFET -20V Vds 20V Vgs SO-8
    RoHS: Compliant    		486
    • 1:$1.7100
    • 10:$1.4200
    • 100:$1.1000
    • 500:$0.9630
    • 1000:$0.7980
    • 2500:$0.7430
    • 5000:$0.7160
    • 10000:$0.7150
    画像 モデル 説明
    SI4943CDY-T1-E3

    Mfr.#: SI4943CDY-T1-E3

    OMO.#: OMO-SI4943CDY-T1-E3

    		 MOSFET -20V Vds 20V Vgs SO-8
    SI4943CDY-T1-GE3

    Mfr.#: SI4943CDY-T1-GE3

    OMO.#: OMO-SI4943CDY-T1-GE3

    		 MOSFET -20V Vds 20V Vgs SO-8
    SI4943CDY-T1-E3

    Mfr.#: SI4943CDY-T1-E3

    OMO.#: OMO-SI4943CDY-T1-E3-VISHAY

    		 RF Bipolar Transistors MOSFET 20V 8.0A 3.1W 19.2mohm @ 10V
    SI4943CDY-T1-E3-S

    Mfr.#: SI4943CDY-T1-E3-S

    OMO.#: OMO-SI4943CDY-T1-E3-S-1190

    		 ブランドニューオリジナル
    SI4943CDY-T1-GE3

    Mfr.#: SI4943CDY-T1-GE3

    OMO.#: OMO-SI4943CDY-T1-GE3-VISHAY

    		 MOSFET 2P-CH 20V 8A 8-SOIC
    SI4943CDY-T1-GE3-S

    Mfr.#: SI4943CDY-T1-GE3-S

    OMO.#: OMO-SI4943CDY-T1-GE3-S-1190

    		 ブランドニューオリジナル
    可用性
    ストック:
    Available
    注文中:
    5500
    数量を入力してください:
    SI4943CDY-T1-E3の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $1.06
    $1.06
    10
    $1.00
    $10.04
    100
    $0.95
    $95.16
    500
    $0.90
    $449.35
    1000
    $0.85
    $845.90
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