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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| BSP299L6327HUSA1 DISTI # BSP299L6327HUSA1TR-ND | Infineon Technologies AG | MOSFET N-CH 500V 400MA SOT-223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSP299L6327HUSA1 DISTI # BSP299L6327HUSA1CT-ND | Infineon Technologies AG | MOSFET N-CH 500V 400MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSP299L6327HUSA1 DISTI # BSP299L6327HUSA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 500V 400MA SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSP299L6327HUSA1 DISTI # BSP299L6327HUSA1 | Infineon Technologies AG | MOSFET N-CH 500V 400MA SOT-223 - Bulk (Alt: BSP299L6327HUSA1) Min Qty: 658 Container: Bulk | Americas - 0 |
|
| BSP299 L6327 DISTI # 726-BSP299L6327 | Infineon Technologies AG | MOSFET N-Ch 500V 400mA SOT-223-3 RoHS: Compliant | 0 | |
| BSP299L6327 | Infineon Technologies AG | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 1330 |
|
| BSP299L6327HUSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 324000 |
|
| BSP299L6327 DISTI # 1562501 | Infineon Technologies AG | MOSFET, N, LOGIC, REEL 1K RoHS: Compliant | 0 |
|
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: BSP299 H6327 OMO.#: OMO-BSP299-H6327 |
MOSFET N-Ch 500V 400mA SOT-223-3 |
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Mfr.#: BSP299L3627 OMO.#: OMO-BSP299L3627-1190 |
ブランドニューオリジナル |
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Mfr.#: BSP299 OMO.#: OMO-BSP299-1190 |
N CHANNEL MOSFET, 500V, 400mA, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:400mA, Drain Source Voltage Vds:500V, On Resistance Rds(on):4ohm, Rds(on) Test Voltage Vgs:10V, |
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Mfr.#: BSP299 H6327 OMO.#: OMO-BSP299-H6327-1190 |
Trans MOSFET N-CH 500V 0.4A Automotive 4-Pin(3+Tab) SOT-223 T/R |
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Mfr.#: BSP299-L6327 OMO.#: OMO-BSP299-L6327-1190 |
ブランドニューオリジナル |
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Mfr.#: BSP299L6327 OMO.#: OMO-BSP299L6327-1190 |
Power Field-Effect Transistor, 0.4A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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Mfr.#: BSP299L6327HUSA1 |
MOSFET N-CH 500V 400MA SOT-223 |
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Mfr.#: BSP299L6327XT OMO.#: OMO-BSP299L6327XT-1190 |
ブランドニューオリジナル |
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Mfr.#: BSP299 E6327 |
MOSFET N-CH 500V 400MA SOT-223 |
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Mfr.#: BSP299H6327XUSA1 |
IGBT Transistors MOSFET N-Ch 500V 400mA SOT-223-3 |