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| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| RF1S640SM9A DISTI # 512-RF1S640SM9A | ON Semiconductor | MOSFET RoHS: Not compliant | 0 | |
| RF1S640SM9A | Fairchild Semiconductor Corporation | MOSFET Transistor, N-Channel, TO-263AB | 698 |
|
| RF1S640SM9A | Harris Semiconductor | MOSFET Transistor, N-Channel, TO-263AB | 81 |
|
| RF1S640SM9A | Intersil Corporation | 11191 | ||
| RF1S640SM9A | HARTING Technology Group | 2400 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: RF1S60P03 OMO.#: OMO-RF1S60P03-1190 |
ブランドニューオリジナル |
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Mfr.#: RF1S60P03SM9A OMO.#: OMO-RF1S60P03SM9A-1190 |
POWER FIELD-EFFECT TRANSISTOR, 60A I(D), 30V, 0.027OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB |
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Mfr.#: RF1S630 OMO.#: OMO-RF1S630-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S630SM OMO.#: OMO-RF1S630SM-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S630SM9A OMO.#: OMO-RF1S630SM9A-1190 |
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: RF1S640 OMO.#: OMO-RF1S640-1190 |
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA |
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Mfr.#: RF1S640SM OMO.#: OMO-RF1S640SM-1190 |
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-263AB - Bulk (Alt: RF1S640SM) |
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Mfr.#: RF1S640SM9A OMO.#: OMO-RF1S640SM9A-1190 |
MOSFET Transistor, N-Channel, TO-263AB |
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Mfr.#: RF1S640SM9A9A OMO.#: OMO-RF1S640SM9A9A-1190 |
ブランドニューオリジナル |
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Mfr.#: RF1S640SM9A_NL OMO.#: OMO-RF1S640SM9A-NL-1190 |
ブランドニューオリジナル |