We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| モデル | メーカー | 説明 | ストック | 価格 |
|---|---|---|---|---|
| SKB15N60ATMA1 DISTI # SKB15N60ATMA1TR-ND | Infineon Technologies AG | IGBT 600V 31A 139W TO263-3 Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SKB15N60 E8151 DISTI # SKB15N60E8151-ND | Infineon Technologies AG | IGBT 600V 31A 139W TO263-3 Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SKB15N60HSATMA1 DISTI # SKB15N60HSATMA1TR-ND | Infineon Technologies AG | IGBT 600V 27A 138W TO263-3 Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SKB15N60 DISTI # SKB15N60 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 31A 3-Pin TO-263 T/R - Bulk (Alt: SKB15N60) RoHS: Not Compliant Min Qty: 205 Container: Bulk | Americas - 0 |
|
| SKB15N60E8151 DISTI # SKB15N60E8151 | Infineon Technologies AG | - Bulk (Alt: SKB15N60E8151) RoHS: Not Compliant Min Qty: 246 Container: Bulk | Americas - 0 | |
| SKB15N60ATMA1 DISTI # SKB15N60ATMA1 | Infineon Technologies AG | Trans IGBT Chip N-CH 600V 31A 3-Pin TO-263 T/R - Bulk (Alt: SKB15N60ATMA1) RoHS: Compliant Min Qty: 165 Container: Bulk | Americas - 0 |
|
| SKB15N60 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant | 1215 |
|
| SKB15N60E8151 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel RoHS: Not Compliant | 1900 |
|
| SKB15N60ATMA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel RoHS: Compliant | 6000 |
|
| SKB15N60 | Infineon Technologies AG | 14766 |
| |
| SKB15N60 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-263AB RoHS: Not Compliant | Europe - 420 |
| 画像 | モデル | 説明 |
|---|---|---|
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Mfr.#: SKB50-12A3 OMO.#: OMO-SKB50-12A3-1190 |
ブランドニューオリジナル |
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Mfr.#: SKB50/08A3 OMO.#: OMO-SKB50-08A3-1190 |
ブランドニューオリジナル |
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Mfr.#: SKB50/16 OMO.#: OMO-SKB50-16-1190 |
ブランドニューオリジナル |
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Mfr.#: SKB50/18A3 OMO.#: OMO-SKB50-18A3-1190 |
ブランドニューオリジナル |
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Mfr.#: SKB5008A3 OMO.#: OMO-SKB5008A3-1190 |
ブランドニューオリジナル |
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Mfr.#: SKB51L16W OMO.#: OMO-SKB51L16W-1190 |
ブランドニューオリジナル |
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Mfr.#: SKB52/12 OMO.#: OMO-SKB52-12-1190 |
ブランドニューオリジナル |
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Mfr.#: SKB52/14 OMO.#: OMO-SKB52-14-1190 |
ブランドニューオリジナル |
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Mfr.#: SKB52/18 OMO.#: OMO-SKB52-18-1190 |
ブランドニューオリジナル |
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Mfr.#: SKB5208 OMO.#: OMO-SKB5208-1190 |
Bridge Rectifier Diode, 1 Phase, 9.5A, 800V V(RRM), Silicon |