CY7C2170KV18-400BZXC

CY7C2170KV18-400BZXC
Mfr. #:
CY7C2170KV18-400BZXC
メーカー:
Cypress Semiconductor
説明:
SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
ライフサイクル:
メーカー新製品
データシート:
CY7C2170KV18-400BZXC データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
CY7C2170KV18-400BZXC 詳しくは CY7C2170KV18-400BZXC Product Details
製品属性
属性値
メーカー:
サイプレスセミコンダクタ
製品カテゴリ:
SRAM
JBoss:
Y
メモリー容量:
18 Mbit
組織:
512 k x 36
最大クロック周波数:
400 MHz
インターフェイスタイプ:
平行
供給電圧-最大:
1.9 V
供給電圧-最小:
1.7 V
供給電流-最大:
640 mA
最低動作温度:
0 C
最高作動温度:
+ 70 C
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
FBGA-165
包装:
トレイ
メモリタイプ:
DDR
シリーズ:
CY7C2170KV18
タイプ:
同期
ブランド:
サイプレスセミコンダクタ
感湿性:
はい
製品タイプ:
SRAM
ファクトリーパックの数量:
136
サブカテゴリ:
メモリとデータストレージ
Tags
CY7C2170K, CY7C217, CY7C21, CY7C2, CY7C, CY7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***h
    M***h
    RU

    Good quality, corresponds to the description.

    2019-01-29
    M***v
    M***v
    BG

    2 months shipping

    2019-06-04
***ical
SRAM Chip Sync Dual 1.8V 18M-bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165, RoHS
***ponent Stockers USA
512K X 36 DDR SRAM 0.45 ns PBGA165
***or
DDR SRAM, 512KX36, 0.45NS PBGA16
***DA Technology Co., Ltd.
Product Description Demo for Development.
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***ure Electronics
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165, RoHS
***or
DDR SRAM, 512KX36, 0.45NS PBGA16
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
DDR-II+ CIO, 18 Mbit Density, BGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***ical
SRAM Chip Sync Dual 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin FBGA Tray
***ress Semiconductor SCT
Synchronous SRAM, QDR-II+, 18432 Kb Density, 400 MHz Frequency, BGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165FBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 512K x 36 0.45ns 165-Pin LFBGA
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***et
SRAM Chip Sync Single 1.8V 18M-Bit 1M x 18 0.45ns 165-Pin LFBGA
***I SCT
1Mx18, 250Mhz, SRAM, FBGA-165
***i-Key
IC SRAM 18MBIT PARALLEL 165LFBGA
***enic
LFBGA-165(15x17) SRAM ROHS
Synchronous SRAM
Cypress Synchronous SRAM offers true random memory access capabilities required for networking and other high performance applications. The Cypress Synchronous SRAM portfolio is available with a number of features designed to solve networking and high performance computing challenges. The portfolio includes standard synchronous SRAM, No Bus Latency SRAM, and QDR® SRAM with a variety of speeds, word widths, densities, and packages. Cypress Synchronous SRAM devices areideal for a wide range of applications including high-speed network switches & routers, communications infrastructure, test equipment, imaging & video and high performance computing.Learn More
Cypress QDR-II+ DDR-II+ Sync SRAM
Cypress' QDR-II+ is a high performance, dual-port SRAM memory. QDR-II+ SRAM offers a maximum speed of 550 MHz, densities up to 144 Mb, read latencies of 2 or 2.5 cycles, burst length of 2 or 4, and is available in an industry-standard 165-ball FBGA package. QDR-II+ products also offer optional programmable On-Die Termination (ODT). The QDR-II+ family also includes double data rate (DDR-II+) devices. DDR-II+ devices are similar to QDR-II+ devices except that all DDR devices have a burst length of 2 and a single data rate address bus. Additionally, DDR-II+ is available in SIO (separate I/O) or CIO (common I/O) options. SIO devices provide independent read and write ports, eliminating the data bus "turnaround" time found in CIO devices. CIO devices provide a single port for reads and writes, reducing the number of required data pin connections.Learn More
モデル メーカー 説明 ストック 価格
CY7C2170KV18-400BZXC
DISTI # CY7C2170KV18-400BZXC-ND
Cypress SemiconductorIC SRAM 18M PARALLEL 165FBGA
RoHS: Compliant
Min Qty: 1
Container: Tray
95In Stock
  • 272:$32.7783
  • 136:$33.7082
  • 50:$38.4868
  • 25:$39.4684
  • 10:$40.9150
  • 1:$44.1200
CY7C2170KV18-400BZXCCypress SemiconductorDDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
RoHS: Compliant
442
  • 1000:$37.2200
  • 500:$39.1800
  • 100:$40.7900
  • 25:$42.5400
  • 1:$45.8100
CY7C2170KV18-400BZXC
DISTI # 727-7C2170KV400BZXC
Cypress SemiconductorSRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
RoHS: Compliant
0
  • 136:$32.0100
画像 モデル 説明
CY7C2170KV18-550BZXC

Mfr.#: CY7C2170KV18-550BZXC

OMO.#: OMO-CY7C2170KV18-550BZXC

SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
CY7C2170KV18-400BZXC

Mfr.#: CY7C2170KV18-400BZXC

OMO.#: OMO-CY7C2170KV18-400BZXC

SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
CY7C2170KV18-400BZC

Mfr.#: CY7C2170KV18-400BZC

OMO.#: OMO-CY7C2170KV18-400BZC

SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
CY7C2170KV18-400BZC

Mfr.#: CY7C2170KV18-400BZC

OMO.#: OMO-CY7C2170KV18-400BZC-CYPRESS-SEMICONDUCTOR

IC SRAM 18M PARALLEL 165FBGA
CY7C2170KV18-550BZXC

Mfr.#: CY7C2170KV18-550BZXC

OMO.#: OMO-CY7C2170KV18-550BZXC-CYPRESS-SEMICONDUCTOR

SRAM 18MB (512Kx36) 1.8v 550MHz DDR II SRAM
CY7C2170KV18-400BZXC

Mfr.#: CY7C2170KV18-400BZXC

OMO.#: OMO-CY7C2170KV18-400BZXC-CYPRESS-SEMICONDUCTOR

SRAM 18MB (512Kx36) 1.8v 400MHz DDR II SRAM
可用性
ストック:
Available
注文中:
1000
数量を入力してください:
CY7C2170KV18-400BZXCの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
136
$32.01
$4 353.36
272
$31.51
$8 570.72
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